STGP10N60L N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT TYPE STGP10N60L ■ ■ ■ ■ ■ V CES V CE(sat ) IC 600 V < 1.95 V 10 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 1 APPLICATIONS ■ ELECTRONIC IGNITION ■ LIGHT DIMMER ■ STATIC RELAYS 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Value Un it V CES Collector-Emitter Voltage (VGS = 0) Parameter 600 V V ECR Reverse Battery Protection 25 V V GE G ate-Emitter Voltage ± 15 V o IC Collector Current (continuous) at Tc = 25 C 25 A IC Collector Current (continuous) at Tc = 100 C o 20 A Collector Current (pulsed) 100 A T otal Dissipation at Tc = 25 C 125 W Derating Factor 0.83 W /o C I CM (•) P tot T s tg Tj o Storage T emperature Max. Operating Junction Temperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area June 1999 1/8 STGP10N60L THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp o 1.2 62.5 0.1 C/W C/W o C/W o ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified) OFF Symbo l Parameter Test Con ditions Collector-Emitt er Breakdown Voltage I C = 250 µA I CES Collector cut-off (V GE = 0) V CE = Max Rating V CE = Max Rating IGES Gate-Emitter Leakage Current (VCE = 0) V GE = ± 15 V V BR(c es) Min. V GE = 0 Typ. Max. 600 Unit V T j = 25 oC o T j = 125 C V CE = 0 25 100 µA µA ± 100 nA Max. Unit 2.4 2.0 V V 2.0 V V V ON (∗) Symbo l V GE(th) V CE(SAT ) IC Parameter Test Con ditions Min. IC = 250 µA I C = 250 µA T j = 25 oC Gate Threshold Voltage V CE = V GE V CE = V GE Collector-Emitt er Saturation Voltage V GE = 4.5 V V GE = 4.5 V V GE = 4.5 V Collector Current V GE = 4.5 V IC = 8 A T j = - 40 oC IC = 9.5 A Tj = 25 o C IC = 8 A T j = 150 o C V CE = 7 V Typ. 0.6 1.0 1.5 1.4 1.25 15 45 Min. Typ. 7 12 A DYNAMIC Symbo l gf s C i es C o es C res QG Parameter Test Con ditions Forward Transconductance V CE =25 V IC = 8 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V f = 1 MHz Gate Charge V CE = 400 V IC = 8 A Tj = o 25 C V GE = 0 1800 120 19 V GE = 5 V Max. Unit S 2600 165 26 30 pF pF pF nC FUNCTIONAL CHARACTERISTICS Symbo l 2/8 Parameter Test Con ditions I CL Latching Current V clamp = 480 V T j = 125 o C E CF Forward Clamping Energy T start = 55 o C V cl amp = 480 V I C = 10 A L = 4.2 mH - Single Pulse E AR Reverse Avalanche Energy dV/dt = 200 V/µs Min. Typ. Max. Unit 20 A 210 mJ 10 mJ STGP10N60L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n Parameter Test Con ditions Min. Typ. Max. Unit Delay Time Rise Time V CC = 480 V V GE = 5 V IC = 8 A R G = 1 KΩ 0.7 1.9 µs µs Turn-on Current Slope V CC = 480 V R G = 1 KΩ T j = 125 o C IC = 8 A V GE = 5 V 5 A/µs 2.5 mJ Turn-on Switching Losses SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit tc t r (v off ) tf E o ff(**) Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 1 KΩ Fall T ime T j = 25 o C Turn-off Switching Loss IC = 8 A V GE = 5 V 4 2.5 1.5 9.0 µs µs µs mJ tc t r (v off ) tf E o ff(**) Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 1 KΩ Fall T ime T j = 125 o C Turn-off Switching Loss IC = 8 A V GE = 5 V 6 3.3 2.5 10.8 µs µs µs mJ (•) Pulse width limited by safe operating area (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Safe Operating Area Thermal Impedance 3/8 STGP10N60L Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Capacitance Variations 4/8 STGP10N60L Gate Charge vs Gate-Emitter Voltage Latching Current vs Rg Gate Threshold vs Temperature Off Losses vs Collector Current Off Losses vs Gate Resistance Off Losses vs Temperature 5/8 STGP10N60L Switching Off Safe Operatin Area Fig. 1: Gate Charge test Circuit Fig. 3: Test Circuit For Inductive Load Switching 6/8 Fig. 2: Switching Times Test Circuit For Resistive Load STGP10N60L TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STGP10N60L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. 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