STGP12NB60HD N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGP12NB60HD 600 V < 2.8 V 12 A ■ ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHT ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequency applications (up to 50kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS ■ SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ UPS ■ ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCES Collector-Emitter Voltage (VGS = 0) Parameter 600 V VECR Emitter-Collector Voltage 20 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C 24 A IC Collector Current (continuous) at TC = 100°C 12 A Collector Current (pulsed) 96 A Total Dissipation at TC = 25°C 100 W ICM () PTOT Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature 0.8 W/°C –65 to 150 °C 150 °C () Pulse width limited by safe operating area July 2003 1/9 STGP12NB60HD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Rthc-sink Thermal Resistance Case-sink Typ 0.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions VBR(CES) Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C IGES Gate-Emitter Leakage Current (VCE = 0) Min. Typ. Max. 600 Unit V 10 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ± 20V , VCE = 0 ±100 nA Typ. Max. Unit 5 V 2.8 V ON (1) Symbol Parameter Test Conditions Min. VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, IC = 12 A 2.0 VGE = 15V, IC = 12 A, Tj =125°C 1.7 3 V DYNAMIC Symbol Parameter gfs Forward Transconductance Cies Input Capacitance Coes Test Conditions Min. VCE = 15 V , IC = 12 A Typ. Max. Unit 10 S 920 pF Output Capacitance 120 pF Cres Reverse Transfer Capacitance 27 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 12 A, VGE = 15V 68 10 30 nC nC nC ICL Latching Current Vclamp = 480 V , Tj = 150°C RG = 10 Ω VCE = 25V, f = 1 MHz, VGE = 0 48 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/9 Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 12 A RG = 10Ω , VGE = 15 V 5 46 ns ns Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 12 A RG=10Ω, VGE = 15 V, Tj =125°C 800 290 A/µs µJ STGP12NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc Parameter Cross-over Time Test Conditions Min. Vcc = 480 V, IC = 12A, RGE = 10 Ω , VGE = 15 V Typ. Max. Unit 150 ns 27 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time 76 ns Fall Time 92 ns Turn-off Switching Loss 0.21 mJ Total Switching Loss 0.49 mJ 230 ns 76 ns 95 ns tf Eoff(**) Ets tc Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time tf Eoff(**) Ets Vcc = 480 V, IC = 12 A, RGE = 10 Ω , VGE = 15 V Tj = 125 °C Fall Time 200 ns Turn-off Switching Loss 0.45 mJ Total Switching Loss 0.74 mJ COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 6 A If = 6 A, Tj = 125 °C 1.3 1.1 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 6 A ,VR = 50 V, Tj = 125°C, di/dt = 100 A/µs 80 240 5.5 If trr Qrr Irrm Max. Unit 12 48 A A 1.9 V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) Thermal Impedance 3/9 STGP12NB60HD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature 4/9 STGP12NB60HD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/9 STGP12NB60HD Switching Off Safe Operating Area 6/9 Diode Forward Voltage STGP12NB60HD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/9 STGP12NB60HD TO-220 MECHANICAL DATA DIM. 8/9 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP12NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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