STMICROELECTRONICS STGP12NB60KD

STGP12NB60KD - STGB12NB60KD
N-CHANNEL 18A - 600V TO-220/D2PAK
SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE
STGP12NB60KD
STGB12NB60KD
■
■
■
■
■
■
■
■
VCES
600 V
600 V
VCE(sat)
IC(#)
(Max) @25°C
@ 100°C
< 2.8 V
< 2.8 V
18 A
18 A
HIGH INPUT IMPEDANCE
LOW ON-LOSSES
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
OFF LOSSES INCLUDE TAIL CURRENT
VERY HIGH FREQUENCY OPERATION
TYPICAL SHORT CIRCUIT WITHSTAND TIME 10
MICROS
3
1
TO-220
2
3
1
D2PAK
CO-PACKAGED ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The
suffix “K” identifies a family optimized for high frequency applications (up to 50kHz) and short circuit proof in
order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS
■ UPS
ORDERING INFORMATION
SALES TYPE
MARKING
PACKAGE
PACKAGING
STGP12NB60KD
GP12NB60KD
TO-220
TUBE
STGB12NB60KDT4
GB12NB60KD
D2PAK
TAPE & REEL
December 2003
1/11
STGP12NB60KD - STGB12NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS = 0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC = 25°C (#)
30
A
IC
Collector Current (continuous) at TC = 100°C (#)
18
A
Collector Current (pulsed)
60
A
µs
ICM ()
Tsc
PTOT
Tstg
Tj
Short Circuit Withstand
10
Total Dissipation at TC = 25°C
125
W
Derating Factor
1.0
W/°C
–65 to 150
°C
150
°C
Storage Temperature
Max. Operating Junction Temperature
() Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
1.0
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
nA
Typ.
Max.
Unit
7
V
2.2
1.7
2.8
V
V
Typ.
Max.
Unit
600
Unit
V
ON (1)
Symbol
Parameter
Test Conditions
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250 µA
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 12 A
VGE = 15V, IC = 12 A, Tj =125°C
Min.
5
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Test Conditions
Min.
VCE = 25 V , IC = 12 A
VCE = 25V, f = 1 MHz, VGE = 0
5
S
890
110
22
pF
pF
pF
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC = 12 A,
VGE = 15V
54
8
31
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V , VGE =15V,
Tj = 125°C , RG = 10 Ω
48
A
Short Circuit WITHSTAND
Time
VCE = 0.5 BVces , VGE = 15 V
Tj = 125°C , RG = 10 Ω
Twsc
2/11
10
µs
STGP12NB60KD - STGB12NB60KD
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon
Parameter
Test Conditions
Rise Time
VCC = 480 V, IC = 12 A
RG = 10Ω , VGE = 15 V
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 12 A RG=10Ω
VGE = 15 V,Tj = 125°C
Turn-on Delay Time
Min.
Typ.
Max.
Unit
25
ns
14.5
ns
590
A/µs
180
µJ
SWITCHING OFF
Symbol
tc
Parameter
Cross-over Time
Test Conditions
Min.
Vcc = 480 V, IC = 12 A,
RGE = 10 Ω , VGE = 15 V
Typ.
Max.
Unit
130
ns
25
ns
tr(Voff)
Off Voltage Rise Time
td(off)
Delay Time
96
ns
Fall Time
100
ns
Turn-off Switching Loss
258
µJ
Total Switching Loss
410
µJ
310
ns
tf
Eoff(**)
Ets
tc
Cross-over Time
Vcc = 480 V, IC = 12 A,
RGE = 10 Ω , VGE = 15 V
Tj = 125 °C
tr(Voff)
Off Voltage Rise Time
80
ns
td(off)
Delay Time
150
ns
Fall Time
220
ns
Turn-off Switching Loss
650
µJ
Total Switching Loss
830
µJ
tf
Eoff(**)
Ets
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
COLLECTOR-EMITTER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Ifm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
If = 6 A
If = 6 A, Tj = 125 °C
1.3
1.1
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
If = 6 A ,VR = 50 V,
Tj =125°C, di/dt = 100 A/µs
80
240
5.5
If
Max.
Unit
12
48
A
A
1.9
V
V
ns
nC
A
(#) Calculated according to the iterative formula:
T JMAX – T C
IC ( T C ) = -------------------------------------------------------------------------------------R THJ – C × V CESAT ( MAX )(T C, I C)
3/11
STGP12NB60KD - STGB12NB60KD
Output Characteristics
Transfer Characteristics
Transconductance
Normalized Collector-Emitter On Voltage vs Temp.
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
4/11
STGP12NB60KD - STGB12NB60KD
Gate Threshold vs Temperature
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
5/11
STGP12NB60KD - STGB12NB60KD
Total Switching Losses vs Collector Current
Diode Forward Voltage
Turn-Off SOA
Thermal Impedance
6/11
STGP12NB60KD - STGB12NB60KD
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
7/11
STGP12NB60KD - STGB12NB60KD
TO-220 MECHANICAL DATA
DIM.
8/11
mm.
MIN.
TYP
inch
MAX.
MIN.
4.60
0.173
TYP.
MAX.
A
4.40
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
L30
28.90
0.645
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STGP12NB60KD - STGB12NB60KD
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
9/11
1
STGP12NB60KD - STGB12NB60KD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
MAX.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
10/11
0.075 0.082
0.933 0.956
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STGP12NB60KD - STGB12NB60KD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
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11/11