STGP3NB60HD STGP3NB60HDFP N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT TYPE STGP3NB60HD STGP3NB60HDFP ■ ■ ■ ■ ■ ■ ■ V CES V CE(sat) IC 600 V 600 V < 2.8 V < 2.8 V 3 A 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding perfomances. The suffix ”H” identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). 3 1 3 2 2 1 TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH FREQUENCY MOTOR CONTROLS ■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STG P7NB60HD STGP7NB60HDF P V CES Collector-Emitter Voltage (VGS = 0) 600 600 V GE G ate-Emitter Voltage V ± 20 ± 20 V IC Collector Current (continuous) at Tc = 25 oC 6 6 A IC Collector Current (continuous) at Tc = 100 oC 3 3 A I CM (•) P tot Collector Current (pulsed) 24 24 A T otal Dissipation at T c = 25 oC 70 35 W 0.56 0.28 W /o C Derating Factor T s tg Tj Storage T emperature Max. O perating Junct ion T emperature -65 to 150 o C 150 o C (•) Pulse width limited by max. junction temperature June 1999 1/9 STGP3NB60HD/FP THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Thermal Resistance Case-sink TO-220 T O-220FP 1.78 3.57 Max T yp 62.5 0.5 o C/W o C/W C/W o ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Collector-Emitt er Breakdown Voltage I C = 250 µA I CES Collector cut-off (V GE = 0) V CE = Max Rating V CE = Max Rating IGES Gate-Emitter Leakage Current (VCE = 0) V GE = ± 20 V V BR(CES) Min. V GE = 0 Typ. Max. 600 Unit V 100 1000 µA µA ± 100 nA Max. Unit 5 V 2.4 1.9 2.8 V V Max. Unit T j = 25 oC T j = 125 o C V CE = 0 ON (∗) Symbol V GE(th) V CE(SAT ) Parameter Test Conditions Gate Threshold Voltage V CE = V GE IC = 250 µA Collector-Emitt er Saturation Voltage V GE = 15 V V GE = 15 V IC = 3 A IC = 3 A Min. Typ. 3 Tj = 125 o C DYNAMIC Symbol gf s Parameter Test Conditions Min. Typ. 1.3 2.4 160 23 4.5 235 33 6.6 300 43 8.6 pF pF pF 21 6 7.6 27 nC nC nC Forward Transconductance V CE =25 V IC = 3 A C i es C o es C res Input Capacitance Output Capacitance Reverse Transfer Capacitance V CE = 25 V f = 1 MHz QG Q GE Q GC Total G ate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 480 V Latching Current V clamp = 480 V T j = 150 o C I CL IC = 3 A V GE = 0 V GE = 15 V R G =10Ω S 12 A SWITCHING ON Symbol t d(on) tr (di/dt) on E o n (❍ ) 2/9 Parameter Test Conditions Min. Typ. Max. Unit Delay Time Rise Time V CC = 480 V V GE = 15 V IC = 3 A R G = 10Ω 16 30 ns ns Turn-on Current Slope V CC = 480 V R G = 10 Ω T j = 125 o C IC = 3 A V GE = 15 V 400 A/µs 77 µJ Turn-on Switching Losses STGP3NB60HD/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tc t r (v off ) td (o ff ) tf E o ff(**) E ts( ❍ ) Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Ω Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss IC = 3 A V GE = 15 V 90 36 53 70 33 100 ns ns ns ns µJ µJ tc t r (v off ) td (o ff ) tf E o ff(**) E ts( ❍ ) Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Ω Delay Time T j = 125 o C Fall T ime Turn-off Switching Loss Total Switching Loss IC = 3 A V GE = 15 V 180 82 58 110 88 165 ns ns ns ns µJ µJ COLLECTOR-EMITTER DIODE Symbol Parameter If I fm Forward Current Forward Current pulsed Vf Forward On-Voltage t rr Q rr I rrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current T est Conditions If = 3 A If = 3 A T j = 125 o C If = 3 A dI/dt = 100 A/µS V R =200 V o T j = 125 C Min. T yp. 1.6 1.4 87 160 3.7 Max. Unit 3 24 A A 2.0 V V ns nC A (•) Pulse width limited by max. junction temperature (❍) Include recovery lossess on the STTA306 freewheeling diode (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedeance For TO-220 Thermal Impedeance For TO-220FP 3/9 STGP3NB60HD/FP Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/9 STGP3NB60HD/FP Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/9 STGP3NB60HD/FP Switching Off Safe Operating Area Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3: Switching Waveforms 6/9 STGP3NB60HD/FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 STGP3NB60HD/FP TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 8/9 L4 STGP3NB60HD/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. 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