STMICROELECTRONICS STGP7NB60HDFP

STGP7NB60HD
STGP7NB60HDFP

N-CHANNEL 7A - 600V TO-220/FP
PowerMESH IGBT
TYPE
STGP7NB60HD
STGP7NB60HDFP
■
■
■
■
■
■
■
V CES
V CE(sat)
IC
600 V
600 V
< 2.8 V
< 2.8 V
7 A
7 A
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (Vcesat)
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
VERY HIGH FREQUENCY OPERATION
OFF LOSSES INCLUDE TAIL CURRENT
CO-PACKAGED WITH TURBOSWITCH
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
3
1
3
2
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STGP7NB60HD
ST GP7NB60HDFP
V CES
Collector-Emitter Voltage (VGS = 0)
600
600
V GE
G ate-Emitter Voltage
V
± 20
± 20
V
IC
Collector Current (continuous) at Tc = 25 oC
14
13
A
IC
Collector Current (continuous) at Tc = 100 oC
7
6
A
I CM (•)
P tot
Collector Current (pulsed)
56
56
A
T otal Dissipation at T c = 25 oC
80
35
W
0.64
0.28
W /o C
Derating Factor
T s tg
Tj
Storage T emperature
Max. O perating Junct ion T emperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
June 1999
1/9
STGP7NB60HD/FP
THERMAL DATA
R thj -case
R thj -amb
R thc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
TO-220
T O-220FP
1.56
3.57
Max
T yp
62.5
0.5
o
C/W
o
C/W
C/W
o
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Collector-Emitt er
Breakdown Voltage
I C = 250 µA
I CES
Collector cut-off
(V GE = 0)
V CE = Max Rating
V CE = Max Rating
IGES
Gate-Emitter Leakage
Current (VCE = 0)
V GE = ± 20 V
V BR(CES)
Min.
V GE = 0
Typ.
Max.
600
Unit
V
250
2000
µA
µA
± 100
nA
Max.
Unit
5
V
2.3
1.9
2.8
V
V
Max.
Unit
T j = 25 oC
T j = 125 o C
V CE = 0
ON (∗)
Symbol
V GE(th)
V CE(SAT )
Parameter
Test Conditions
Gate Threshold
Voltage
V CE = V GE
IC = 250 µA
Collector-Emitt er
Saturation Voltage
V GE = 15 V
V GE = 15 V
IC = 7 A
IC = 7 A
Min.
Typ.
3
Tj = 125 o C
DYNAMIC
Symbol
gf s
Parameter
Test Conditions
Min.
Typ.
3.5
5
390
45
10
560
68
15
730
90
20
pF
pF
pF
42
7.9
17.6
55
nC
nC
nC
Forward
Transconductance
V CE =25 V
IC = 7 A
C i es
C o es
C res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V CE = 25 V
f = 1 MHz
QG
Q GE
Q GC
Total G ate Charge
Gate-Emitter Charge
Gate-Collector Charge
V CE = 480 V
Latching Current
V clamp = 480 V
T j = 150 o C
I CL
IC = 7 A
V GE = 0
V GE = 15 V
R G =10Ω
S
28
A
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
E o n (❍ )
2/9
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Delay Time
Rise Time
V CC = 480 V
V GE = 15 V
IC = 7 A
R G = 10Ω
15
48
ns
ns
Turn-on Current Slope
V CC = 480 V
R G = 10 Ω
T j = 125 o C
IC = 7 A
V GE = 15 V
160
A/µs
185
µJ
Turn-on
Switching Losses
STGP7NB60HD/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tc
t r (v off )
td (o ff )
tf
E o ff(**)
E ts( ❍ )
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 10 Ω
Delay Time
Fall T ime
Turn-off Switching Loss
Total Switching Loss
IC = 7 A
V GE = 15 V
85
20
75
70
85
235
ns
ns
ns
ns
µJ
µJ
tc
t r (v off )
td (o ff )
tf
E o ff(**)
E ts( ❍ )
Cross-O ver Time
V CC = 480 V
Off Voltage Rise Time R GE = 10 Ω
Delay Time
T j = 125 o C
Fall T ime
Turn-off Switching Loss
Total Switching Loss
IC = 7 A
V GE = 15 V
150
50
110
110
220
405
ns
ns
ns
ns
µJ
µJ
COLLECTOR-EMITTER DIODE
Symbol
Parameter
If
I fm
Forward Current
Forward Current pulsed
Vf
Forward On-Voltage
t rr
Q rr
I rrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
T est Conditions
If = 7 A
If = 7 A
T j = 125 o C
If = 7 A
dI/dt = 100 A/µS
V R =200 V
o
T j = 125 C
Min.
T yp.
1.6
1.4
100
180
3.6
Max.
Unit
7
56
A
A
2.0
V
V
ns
nC
A
(•) Pulse width limited by max. junction temperature
(❍) Include recovery lossess on the STTA506 freewheeling diode
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedeance For TO-220
Thermal Impedeance For TO-220FP
3/9
STGP7NB60HD/FP
Output Characteristics
Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
4/9
STGP7NB60HD/FP
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
5/9
STGP7NB60HD/FP
Switching Off Safe Operating Area
Diode Forward Voltage
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
6/9
STGP7NB60HD/FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STGP7NB60HD/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
A
4.4
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
8/9
L4
STGP7NB60HD/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
.
9/9