STGW50NB60M N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT TYPE STGW50NB60M ■ ■ ■ ■ VCES VCE(sat)(25°C) IC 600 V < 1.9 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 1 TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ MOTOR CONTROL ■ WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VECR Reverse Battery Protection 20 V VGE Gate-Emitter Voltage ±20 V IC Collector Current (continuous) at TC = 25°C 100 A IC Collector Current (continuous) at TC = 100°C 50 A Collector Current (pulsed) 400 A Total Dissipation at TC = 25°C 250 W 2 W/°C –65 to 150 °C 150 °C ICM () PTOT Derating Factor Tstg Tj Storage Temperature Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area May 2003 1/9 STGW50NB60M THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Thermal Resistance Case-heatsink Typ 0.1 °C/W Rthc-h ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Collector-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C IGES Gate-Emitter Leakage Current (VCE = 0) VGE = ± 20 V , VCE = 0 VBR(CES) Min. Typ. Max. 600 Unit V 10 100 µA µA ± 100 nA ON (1) Symbol Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE = VGE, IC = 250 µA VCE(sat) Collector-Emitter Saturation Voltage VGE = 15V, VGE = 15V, VGE = 15V, VGE = 15V, Min. Typ. Max. Unit 3 4 5 V IC = 30 A @25°C IC = 30 A @100°C IC = 50 A @25°C IC = 50 A @100°C 1.3 1.2 1.5 1.35 1.9 V V V V DYNAMIC Symbol gfs Parameter Forward Transconductance Test Conditions Min. VCE = 15 V , IC = 18 A Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480 V, IC = 50 A, VGE = 15 V ICL Latching Current Vclamp = 480 V , Tj = 125°C RG = 10 Ω VCE = 25 V, f = 1 MHz, VGE = 0 Typ. Max. Unit 22 S 4500 400 70 pF pF pF 231 28 97 nC nC nC 300 A SWITCHING ON Symbol td(on) tr (di/dt)on Eon 2/9 Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 50 A RG = 10Ω , VGE = 15 V 45 30 ns ns Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 50 A RG=10 Ω , VGE = 15 V Tj = 125°C 1600 800 A/µs µJ STGW50NB60M ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Cross-over Time Vcc = 480 V, IC = 50 A 450 ns tr(Voff) Off Voltage Rise Time RGE = 10 Ω , VGE = 15 V 130 ns td(off) Delay Time 410 ns Fall Time 300 ns 4 mJ 4.1 mJ tc tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Turn-off Switching Loss Total Switching Loss Cross-over Time Vcc = 480 V, IC = 50 A 730 ns Off Voltage Rise Time RGE = 10 Ω , VGE = 15 V 265 ns 565 ns Fall Time Delay Time Tj = 125 °C 440 ns Turn-off Switching Loss 6.6 mJ Total Switching Loss 7.1 mJ Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/9 STGW50NB60M Thermal Impedance Switching Off Safe Operating Area Output Characteristics Transfer Characteristics Normalized Gate Threshold Voltage vs Temp. Transconductance 4/9 STGW50NB60M Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage Capacitance Variations Normalized Break-down Voltage vs Temp. Total Switching losses vs Gate Resistance Total Switching losses vs Temperature 5/9 STGW50NB60M Total Switching losses vs Ic 6/9 Collector-Emitter on Voltage vs Current STGW50NB60M Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/9 STGW50NB60M TO-247 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. 0.19 0.20 A 4.85 5.15 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 8/9 TYP 3.55 3.65 0.14 0.143 STGW50NB60M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 9/9