STL22NF10 N-CHANNEL 100V - 0.055 Ω - 22A PowerFLAT™ LOW GATE CHARGE STripFET™ II MOSFET ■ ■ ■ ■ ■ TYPE VDSS RDS(on) ID STL22NF10 100 V <0.060 Ω 22 A(1) TYPICAL RDS(on) = 0.055 Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE VERY LOW GATE CHARGE PowerFLAT™(5x5) DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique "STripFET™" technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY ISOLATED DC-DC CONVERTERS ■ TELECOM AND AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS Parameter Drain-source Voltage (VGS = 0) Unit 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V VGS Gate- source Voltage ± 20 V ID(2) Drain Current (continuous) at TC = 25°C (Steady State) 5.3 A ID(2) Drain Current (continuous) at TC = 100°C 3.8 A IDM(3) Drain Current (pulsed) 22 A Ptot(2) Total Dissipation at TC = 25°C (Steady State) 4 W Ptot(1) Total Dissipation at TC = 25°C 70 W VDGR Derating Factor 0.03 W/°C dv/dt (5) Peak Diode Recovery voltage slope 16 V/ns EAS (6) Single Pulse Avalanche Energy 82 mJ -55 to 150 °C Tstg Tj February 2003 . Value Storage Temperature Operating Junction Temperature 1/8 STL22NF10 THERMAL DATA Rthj-F Rthj-pcb(4) (*)Thermal Resistance Junction-Foot (Drain) Thermal Operating Junction-pcb 1.8 31.5 °C/W °C/W (*) Mounted on FR-4 board (t [ 10 sec.) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS Min. Typ. Max. 100 Unit V 1 10 µA µA ±100 nA Max. Unit ON (7) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. 2 ID = 11 A V 0.055 0.060 Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (7) Forward Transconductance VDS = 20 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 11 A Min. 16 S 885 130 56 pF pF pF STL22NF10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 11 A VDD = 50 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 20 45 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 80V ID= 22A VGS=10V 30 6 10 40 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 11 A VDD = 50 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 45 10 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM Source-drain Current Source-drain Current (pulsed) VSD (7) trr Qrr IRRM Test Conditions Forward On Voltage ISD = 22 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD =22 A VDD = 30 V Tj = 150°C (see test circuit, Figure 5) Min. Typ. VGS = 0 100 375 7.5 Max. Unit 5.3 22 A A 1.3 V ns nC A (1) The value is rated according Rthj-F. (2) The value is rated according Rthj-pcb. (3) Pulse width limited by safe operating area. (4) When Mounted on FR-4 Board of 1 inch², 2 oz Cu, t<10s. (5) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (6) Starting Tj = 25 oC, ID = 11 A, VDD = 30V. (7) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Safe Operating Area Thermal Impedance 3/8 STL22NF10 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STL22NF10 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STL22NF10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STL22NF10 7/8 STL22NF10 Information furnished is believed to be accurate and reliable. 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