STMICROELECTRONICS STN1N20

STN1N20

N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223
POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STN1N20
■
■
■
■
■
■
V DSS
R DS(on)
I D CONT
200 V
< 1.5 Ω
1 A
TYPICAL RDS(on) = 1.2 Ω
AVALANCHE RUGGED TECHNOLOGY
SOT-223 CAN BE WAVE OR REFLOW
SOLDERED
AVAILABLE IN TAPE AND REEL ON
REQUEST
150 oC OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
2
1
2
3
SOT-223
APPLICATIONS
■ HARD DISK DRIVERS
■ SMALL MOTOR CURRENT SENSE
CIRCUITS
■ DC-DC CONVERTERS AND POWER
SUPPLIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V DS
V DGR
V GS
Value
Un it
Drain-source Voltage (V GS = 0)
Parameter
200
V
Drain- gate Voltage (R GS = 20 kΩ)
200
V
± 20
V
G ate-source Voltage
o
I D (*)
Drain Current (continuous) at Tc = 25 C
I D (*)
Drain Current (continuous) at Tc = 100 C
I DM (•)
P tot
o
Drain Current (pulsed)
o
T otal Dissipation at Tc = 25 C
Derating Factor
T s tg
Tj
Storage T emperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 1999
1
A
0.6
A
4
A
2.9
W
0.023
W /o C
-65 to 150
o
C
150
o
C
(*) Limite d by package
1/6
STN1N20
THERMAL DATA
R th j-pc b
R thj -amb
Tl
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surf ace Mounted)
Maximum Lead Temperature F or Soldering Purpose
o
43
60
o
C/W
C/W
o
260
C
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1
A
E AS
Single Pulse Avalanche Energy
(starting Tj = 25 o C, ID = IAR , V DD = 25 V)
10
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
I D = 250 µA
V GS = 0
I DSS
V DS = Max Rating
Zero Gate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
200
Unit
V
T c = 125 oC
V GS = ± 20 V
10
100
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
I D(o n)
On State Drain Current
V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
Min.
2
ID = 0.5 A
Typ.
3
4
V
1.2
1.5
Ω
1
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/6
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 0.5 A
V GS = 0 V
Min.
Typ.
0.3
0.7
290
50
10
Max.
Unit
S
400
70
15
pF
pF
pF
STN1N20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Typ.
Max.
Unit
Turn-on Time
Rise Time
Parameter
V DD = 100 V
R G = 4.7 Ω
Test Con ditions
ID = 2 A
V GS = 10 V
Min.
7
6
10
10
ns
ns
Turn-on Current Slope
V DD = 160 V
R G = 47 Ω
ID = 4 A
VGS = 10 V
270
Total G ate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 160 V
ID = 4 A
13
7
4
20
nC
nC
nC
Typ.
Max.
Unit
6
5
13
10
10
20
ns
ns
ns
Typ.
Max.
Unit
1
4
A
A
1.5
V
VGS = 10 V
A/µs
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise T ime
Fall T ime
Cross-over Time
Test Con ditions
Min.
V DD = 160 V I D = 4 A
R G = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbo l
Parameter
Test Con ditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 1 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 4 A
di/dt = 100 A/µs
Tj = 150 o C
V DD = 30 V
t rr
Q rr
I RRM
Min.
V GS = 0
170
ns
1
µC
12
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STN1N20
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STN1N20
SOT-223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
5/6
STN1N20
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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6/6
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