STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP ■ ■ ■ ■ ■ VDSS RDS(on) ID 100 V 100 V 100 V <0.045 Ω <0.045 Ω <0.045 Ω 35 A 35 A 18 A TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 3 1 1 2 D2PAK TO-263 (Suffix “T4”) TO-220FP 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STB30NF10 STP30NF10 VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. May 2002 . STP30NF10FP 100 100 ± 20 35 25 140 18 13 72 115 0.77 30 0.2 Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Unit V V V A A A 28 W W/°C V/ns 275 mJ ------ 2000 -55 to 175 V °C (1) ISD ≤30A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting T j = 25 oC, ID = 15A, VDD= 30V 1/11 STB30NF10 STP30NF10 STP30NF10FP THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max D2PAK TO-220 TO-220FP 1.30 5 °C/W 62.5 300 °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS Min. Typ. Max. 100 Unit V 1 10 µA µA ±100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. Max. Unit 2 3 4 V 0.038 0.045 Ω Typ. Max. Unit ID = 15 A DYNAMIC Symbol 2/11 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 15 A Min. 10 S 1180 180 80 pF pF pF STB30NF10 STP30NF10 STP30NF10FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 15 A VDD = 50 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 15 40 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 80 V ID= 30 A VGS= 10V 40 8.0 15 55 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 15 A VDD = 50 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 45 10 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 30 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 30 A VDD = 55 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 110 390 7.5 Max. Unit 35 140 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/11 STB30NF10 STP30NF10 STP30NF10FP Thermal Impedance Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/11 STB30NF10 STP30NF10 STP30NF10FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature 5/11 STB30NF10 STP30NF10 STP30NF10FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 STB30NF10 STP30NF10 STP30NF10FP D2PAK MECHANICAL DATA DIM. mm. MIN. TYP. inch. MAX. MIN. TYP. TYP. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.028 0.037 B2 1.14 1.7 0.045 0.067 C 0.45 0.6 0.018 0.024 C2 1.21 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 10.4 0.394 D1 8 0.315 E 10 E1 8.5 G 4.88 5.28 0.409 0.334 0.192 0.208 L 15 15.85 0.591 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.069 M 2.4 3.2 0.094 0.126 8° 0° R V2 0.4 0° 0.016 8° 7/11 STB30NF10 STP30NF10 STP30NF10FP TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. 1.27 MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/11 L4 P011C STB30NF10 STP30NF10 STP30NF10FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 9/11 STB30NF10 STP30NF10 STP30NF10FP D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0075 0.082 R 50 T 0.25 0.35 .0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 10/11 1.574 MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB30NF10 STP30NF10 STP30NF10FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 11/11