STP3NK80Z - STF3NK80Z STD3NK80Z - STD3NK80Z-1 N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAK Zener-Protected SuperMESH™ Power MOSFET TYPE STP3NK80Z STF3NK80Z STD3NK80Z STD3NK80Z-1 ■ ■ ■ ■ ■ ■ VDSS RDS(on) 800 800 800 800 < 4.5 < 4.5 < 4.5 < 4.5 V V V V Ω Ω Ω Ω ID Pw 2.5 A 2.5 A 2.5 A 2.5 A 70 W 25 W 70 W 70 W TYPICAL RDS(on) = 3.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 3 TO-220 1 3 2 1 TO-220FP 3 3 2 1 DPAK 2 1 IPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ■ LIGHTING ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP3NK80Z P3NK80Z TO-220 TUBE STF3NK80Z F3NK80Z TO-220FP TUBE STD3NK80ZT4 D3NK80Z DPAK TAPE & REEL STD3NK80Z-1 D3NK80Z IPAK TUBE September 2003 1/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP3NK80Z VDS VDGR VGS Unit STF3NK80Z STD3NK80Z STD3NK80Z-1 Drain-source Voltage (VGS = 0) 800 V Drain-gate Voltage (RGS = 20 kΩ) 800 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 2.5 2.5 (*) 2.5 A ID Drain Current (continuous) at TC = 100°C IDM () PTOT 1.57 1.57 (*) 1.57 A Drain Current (pulsed) 10 10 (*) 10 A Total Dissipation at TC = 25°C 70 25 70 W 0.56 0.2 0.56 W/°C Derating Factor VESD(G-S) dv/dt (1) Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature - 2 KV 4.5 V/ns 2500 - -55 to 150 V °C ( ) Pulse width limited by safe operating area (1) ISD ≤ 2.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-220 TO-220FP DPAK IPAK 1.78 5 1.78 °C/W 100 °C/W 62.5 Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 2.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 170 mJ GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. BVGSO Gate-Source Breakdown Voltage Igs= ± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 50 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.25 A V(BR)DSS 800 Unit 3 V 3.75 4.5 V 3.8 4.5 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 1.25 A VDS = 25V, f = 1 MHz, VGS = 0 2.1 S 485 57 11 pF pF pF Equivalent Output Capacitance VGS = 0V, VDS = 0V to 640V 22 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 400 V, ID = 1.25 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 17 27 36 40 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V, ID = 2.5 A, VGS = 10 V 19 3.2 10.8 nC nC nC SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 2.5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.5 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see test circuit, Figure 5) 384 1600 8.4 ns nC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 2.5 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) 474 2100 8.8 ns nC A trr Qrr IRRM trr Qrr IRRM Test Conditions Min. Typ. Max. Unit 2.5 10 A A 1.6 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Safe Operating Area For TO-220/DPAK/IPAK Thermal Impedance For TO-220/DPAK/IPAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 TO-220 MECHANICAL DATA DIM. 8/13 mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. MAX. 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 L2 L5 1 2 3 L4 9/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 11/13 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. inch MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 B1 D 1.5 D1 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 12/13 0.059 0.641 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 13/13