STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 ■ ■ ■ ■ ■ VDSS RDS(on) ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 1 TO-220 2 TO-220FP 12 3 (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)4NC60A(-1) VDS VDGR VGS Unit STP4NC60AFP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 4.2 4.2(*) A ID Drain Current (continuos) at TC = 100°C 2.6 2.6(*) A Drain Current (pulsed) 16.8 16.8(*) A Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C Peak Diode Recovery voltage slope 3.5 3.5 V/ns - 2500 V IDM (●) PTOT dv/dt(1) VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤4.2A, di/dt ≤300A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. July 2001 –60 to 150 °C (*)Limited only by maximum Temperature allowed 1/10 STP4NC60A/FP/STB4NC60A-1 THERMAL DATA TO-220/I2PAK TO-220FP 1.25 3.57 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 4.2 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 250 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V V(BR)DSS Min. Typ. Max. 600 Unit V VDS = Max Rating, TC = 125 °C 1 µA 50 µA ±100 nA Typ. Max. Unit ON (1) Symbol VGS(th) RDS(on) Parameter Test Conditions Gate Threshold Voltage VDS = VGS, ID = 250µA Static Drain-source On Resistance VGS = 10V, ID =1.5 A Min. 2 3 4 V 1.8 2 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2A VDS = 25V, f = 1 MHz, VGS = 0 Min. 3.7 S 475 pF Ciss Input Capacitance Coss Output Capacitance 72 pF Crss Reverse Transfer Capacitance 10 pF STP4NC60A/FP/STB4NC60A-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 300V, ID = 2A RG = 4.7Ω ,VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 4A, VGS = 10V Typ. Max. Unit 14 ns 14 ns 16.5 21.1 nC 2.5 nC 9 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480V, ID = 4A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 15 ns 19 ns 24 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 4.2A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 4.2 A 16.8 A 1.6 V 600 ns 2.7 µC 9 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP 3/10 STP4NC60A/FP/STB4NC60A-1 Thermal Impedance for TO-220/I2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/10 STP4NC60A/FP/STB4NC60A-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STP4NC60A/FP/STB4NC60A-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP4NC60A/FP/STB4NC60A-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/10 STP4NC60A/FP/STB4NC60A-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/10 L4 STP4NC60A/FP/STB4NC60A-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 9/10 STP4NC60A/FP/STB4NC60A-1 Information furnished is believed to be accurate and reliable. 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