STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z/-1 800V < 2.8 Ω 4A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 2 1 D PAK 3 1 TO-220 2 TO-220FP 23 I2PAK1 (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP4NC80Z P4NC80Z TO-220 TUBE STP4NC80ZFP P4NC80ZFP TO-220FP TUBE STB4NC80ZT4 B4NC80Z D2PAK TAPE & REEL STB4NC80Z-1 B4NC80Z I2PAK TAPE & REEL November 2003 1/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)4NC80Z(-1) VDS VDGR VGS ID ID IDM (● ) PTOT IGS VESD(G-S) STP4NC80ZFP Drain-source Voltage (VGS = 0) 800 V Drain-gate Voltage (RGS = 20 kΩ) 800 V Gate- source Voltage ± 25 V Drain Current (continuos) at TC = 25°C 4 4(*) A Drain Current (continuos) at TC = 100°C 2.5 2.5(*) A Drain Current (pulsed) 16 16(*) A Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C Gate-source Current ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 2.5 KV 3 V/ns dv/dt(1) Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature Tj Unit -- 2000 V –65 to 150 °C 150 °C Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX .(*)Pulse width Limited by maximum temperature allowed THERMAL DATA TO-220 / D2PAK / I2PAK TO-220FP Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl 1.25 3.57 °C/W AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 4 A 225 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS 2/14 Test Conditions ID = 250 µA, VGS = 0 ID = 1 mA, VGS = 0 Min. Typ. Max. 800 Unit V 0.9 V/°C Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2 A Min. 3 Typ. Max. Unit 4 5 V 2.4 2.8 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Test Conditions Min. VDS > ID(on) x RDS(on)max, ID = 2A VDS = 25V, f = 1 MHz, VGS = 0 4 S 1200 pF Ciss Input Capacitance Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 11 pF SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 400 V, ID = 2 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 640V, ID = 4A, VGS = 10V Typ. Max. Unit 27 ns 10 ns 27 36.5 nC 7 nC 10 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 640V, ID = 4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 11 ns 10 ns 24 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 4 A ISDM (2) Source-drain Current (pulsed) 16 A VSD (1) 1.6 V ISD Parameter Test Conditions Forward On Voltage ISD = 4 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4 A, di/dt = 100A/µs, VDD = 50V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Min. Typ. 560 ns 3.4 µC 13 A 3/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 50 mA, 90 Ω BVGSO 25 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 4/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 Safe Operating Area For TO-220/D²PAK/I²PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/D²PAK/I²PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 5/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 6/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 Source-drain Diode Forward Characteristics 7/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 8/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. 4.60 0.173 TYP. MAX. A 4.40 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 9/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 F F1 L7 L2 10/14 L5 1 2 3 L4 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 11/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 4º 3 V2 0.4 12/14 1 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 * on sales type 13/14 STP4NC80Z - STP4NC80ZFP - STB4NC80Z - STB4NC80Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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