STP4NM60 STD3NM60 - STD3NM60-1 N-CHANNEL 600V - 1.3Ω - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE STP4NM60 STD3NM60 STD3NM60-1 ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 600 V 600 V 600 V < 1.5 Ω < 1.5 Ω < 1.5 Ω 4A 3A 3A 69 W 42 W 42 W TYPICAL RDS(on) = 1.3 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS 3 2 1 IPAK TO-220 3 1 DPAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP4NM60 P4NM60 TO-220 TUBE STD3NM60T4 D3NM60 DPAK TAPE & REEL STD3NM60-1 D3NM60 IPAK TUBE September 2002 1/12 STP4NM60 / STD3NM60 / STD3NM60-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD3NM60 STD3NM60-1 STP4NM60 VDS VDGR VGS Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 4 3 A ID Drain Current (continuous) at TC = 100°C IDM (l) PTOT 2.52 1.9 A Drain Current (pulsed) 16 12 A Total Dissipation at TC = 25°C 69 42 W 0.33 W/°C Derating Factor dv/dt (1) Tj Tstg 0.55 Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 15 V/ns -65 to 150 -65 to 150 °C °C (l) Pulse width limited by safe operating area (1) I SD ≤3A, di/dt ≤400 µ A, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. THERMAL DATA TO-220 DPAK IPAK 1.82 3 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 1.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP4NM60 / STD3NM60 / STD3NM60-1 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±5 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 4 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.5 A 1.3 1.5 Ω Typ. Max. Unit V(BR)DSS 600 Unit 3 V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15 V, ID = 1.5 A VDS = 25V, f = 1 MHz, VGS = 0 2.7 S 324 132 7.4 pF pF pF SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time VDD = 300 V, ID = 1.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 3 A, VGS = 10V Min. Typ. Max. 9 4 Unit ns ns 10 3 4.7 14 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD = 480 V, ID = 3 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 16.5 10.5 15 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit 3 12 A A 1.5 V ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 3 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, di/dt = 100A/µs VDD = 100 V, Tj = 25°C (see test circuit, Figure 5) 224 1 9 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A, di/dt = 100A/µs VDD = 100 V, Tj = 150°C (see test circuit, Figure 5) 296 1.4 9.3 ns µC A trr Qrr IRRM trr Qrr IRRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/12 STP4NM60 / STD3NM60 / STD3NM60-1 Safe Operating Area For TO-220 Thermal Impedance For TO-220 Safe Operating Area For DPAK / IPAK Thermal Impedance For DPAK / IPAK Output Characteristics Transfer Characteristics 4/12 STP4NM60 / STD3NM60 / STD3NM60-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/12 STP4NM60 / STD3NM60 / STD3NM60-1 Source-drain Diode Forward Characteristics 6/12 STP4NM60 / STD3NM60 / STD3NM60-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/12 STP4NM60 / STD3NM60 / STD3NM60-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/12 L4 P011C STP4NM60 / STD3NM60 / STD3NM60-1 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 2.20 2.40 0.087 TYP. MAX. 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 9/12 STP4NM60 / STD3NM60 / STD3NM60-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 10/12 STP4NM60 / STD3NM60 / STD3NM60-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. 1.5 C 12.8 D 20.2 G 16.4 N 50 D 1.5 1.5 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 40 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 0.063 K0 15.7 12.992 0.059 P0 R MAX. MAX. D1 W MIN. 330 T TAPE MECHANICAL DATA inch MAX. 0.641 * on sales type 11/12 STP4NM60 / STD3NM60 / STD3NM60-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 12/12