STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 2 3 3 2 1 TO-220 TO220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e STP55NE06L V DS Unit ST P55NE06LFP Drain-source Voltage (V GS = 0) 60 V V DGR Drain- gate Voltage (R GS = 20 kΩ) 60 V V GS Gate-source Voltage ± 15 o V ID Drain Current (continuous) at Tc = 25 C 55 28 A ID o Drain Current (continuous) at Tc = 100 C 39 20 A Drain Current (pulsed) 220 220 A IDM (•) P t ot o Total Dissipation at T c = 25 C 130 35 W Derating Factor 0.86 0.23 W/ C 2000 V V ISO Insulation W ithstand Voltage (DC) dV/dt Peak Diode Recovery voltage slope T stg Tj Storage Temperature Max. O perating Junction Temperature (•) Pulse width limited by safe operating area December 1997 7 o V/ns -65 to 175 o C 175 o C ( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/6 STP55NE06LFP THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max T O-220 T O-220F P 1.15 4.28 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = I AR , V DD = 25 V) Max Valu e Unit 55 A 250 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Gate-body Leakage Current (V DS = 0) Min. Typ . Max. 60 VGS = 0 Un it V Tc = 125 V GS = ± 15 V 1 10 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate T hreshold Voltage V DS = VGS R DS( on) Static Drain-source O n Resistance V GS = 5 V ID = 27.5 A V GS = 10 V ID = 27.5 A ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V Min. Typ . Max. Un it 1 1.7 2.5 V 0.022 0.019 0.028 0.022 Ω 55 A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/6 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =27.5 A VGS = 0 Min. Typ . 20 30 2800 375 100 Max. Un it S 3750 500 140 pF pF pF STP55NE06LFP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s t d(on) tr Turn-on T ime Rise Time V DD = 30 V R G =4.7 Ω Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 48 V Min. ID = 27.5 A V GS = 5 V ID = 55 A V GS = 5 V Typ . Max. Un it 40 100 55 140 ns ns 40 13 20 55 nC nC nC Typ . Max. Un it 25 40 65 35 55 90 ns ns ns Typ . Max. Un it 55 220 A A 1.5 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over T ime Test Cond ition s Min. V DD = 48 V I D = 55 A R G =4.7 Ω VGS = 5 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward O n Voltage I SD = 55 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 55 A V DD = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o Tj = 150 C 65 ns 180 nC 5.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/6 STP55NE06LFP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 0.551 L2 16.4 L4 0.645 13.0 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/6 L4 P011C STP55NE06LFP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 L4 5/6 STP55NE06LFP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6