STMICROELECTRONICS STP5NC50

STP5NC50 - STP5NC50FP
STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK
PowerMesh™II MOSFET
TYPE
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
■
■
■
■
■
VDSS
RDS(on)
ID
500 V
500 V
500 V
500 V
< 1.5Ω
< 1.5Ω
< 1.5Ω
< 1.5Ω
5.5A
5.5A
5.5A
5.5A
TYPICAL RDS(on) = 1.3Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
3
1
D2PAK
TO-220
TO-220FP
3
12
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
I2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP5NC50
STB5NC50/-1
VDS
VDGR
VGS
Unit
STP5NC50FP
Drain-source Voltage (VGS = 0)
500
V
Drain-gate Voltage (RGS = 20 kΩ)
500
V
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
5.5
5.5(*)
A
ID
Drain Current (continuos) at TC = 100°C
3.5
3.5(*)
A
Drain Current (pulsed)
22
22
A
Total Dissipation at TC = 25°C
100
35
W
Derating Factor
0.8
0.28
W/°C
IDM ()
PTOT
dv/dt(1)
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Tstg
Operating Junction Temperature
Storage Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤5.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
December 2002
3.5
-
V/ns
2500
-55 to 175
-65 to 175
V
°C
°C
(*)Limited only by maximum temperature allowed
1/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
THERMAL DATA
TO-220
D2PAK
I2PAK
TO-220FP
1.25
3.57
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
5.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
280
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
500
Unit
Drain-source
Breakdown Voltage
ID = 250µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
50
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2 A
Min.
Typ.
Max.
Unit
2
3
4
V
1.3
1.5
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
2/12
Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
4
S
480
pF
80
pF
11.5
pF
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 250V, ID = 2.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 5.5A,
VGS = 10V
Typ.
Max.
Unit
14
ns
15
ns
17.5
24.5
nC
3
nC
9
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 400V, ID = 5.5A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
12
ns
14
ns
20
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
5.5
A
ISDM (2)
Source-drain Current (pulsed)
22
A
VSD (1)
Forward On Voltage
ISD = 5.5A, VGS = 0
1.6
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 5.5A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
IRRM
Reverse Recovery Current
360
ns
1.6
µC
9
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/D2PAK/I2PAK
Safe Operating Area for TO-220FP
3/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Thermal Impedence for TO-220/D2PAK/I2PAK
Thermal Impedence for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
0.409
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
MAX.
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.5
0.045
0.067
F2
1.15
1.5
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
L2
8/12
L5
1 2 3
L4
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
D2PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
0.315
10
E1
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.015
0º
8º
3
V2
0.4
9/12
1
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
TO-262 (I2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
e
2.4
2.7
0.094
0.106
E
10
10.4
0.393
0.409
L
13.1
13.6
0.515
0.531
L1
3.48
3.78
0.137
0.149
L2
1.27
1.4
0.050
0.055
E
e
B
B2
C2
A1
A
C
A
L1
L2
D
L
P011P5/E
10/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
MAX.
MIN.
330
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.075 0.082
0.933 0.956
* on sales type
11/12
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
12/12