STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI ■ ■ ■ ■ ■ V DSS R DS( on) ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT ■ 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-source Voltage (V GS = 0) 600 V Drain- gate Voltage (R GS = 20 kΩ) 600 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 3.8 A ID Drain Current (continuous) at T c = 100 oC 2.4 A Drain Current (pulsed) 24 A Total Dissipation at Tc = 25 o C 40 W 0.32 W/o C ID M(•) P tot Derating Factor V ISO Insulation Withstand Voltage (DC) T stg Storage Temperature Tj Max. Operating Junction Temperature 2000 V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area May 1993 1/9 STP6N60FI THERMAL DATA R thj-cas e Rthj- amb Rthj- amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ o 3.12 62.5 0.5 300 C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit 6 A IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 370 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 17 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 3.7 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Min. VG S = 0 Typ. Max. 600 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Unit V T c = 125 oC V GS = ± 20 V 250 1000 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions ID = 250 µA V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 3 A V GS = 10V I D = 3 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 1 1.2 2.4 Ω Ω T c = 100 oC 6 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 3 A VG S = 0 Min. Typ. 2 4.8 1150 160 75 Max. Unit S 1500 240 110 pF pF pF STP6N60FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 300 V I D = 3 A VGS = 10 V R G = 50 Ω (see test circuit, figure 3) Test Conditions 50 140 65 175 ns ns Turn-on Current Slope V DD = 480 V I D = 6 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) 240 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V ID = 6 A Min. V GS = 10 V A/µs 78 8 41 98 nC nC nC Typ. Max. Unit 100 27 145 125 34 180 ns ns ns Typ. Max. Unit 3.8 24 A A SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 480 V I D = 6 A R G = 50 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 6 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 2 V 750 ns 13.5 µC 38 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/9 STP6N60FI Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 4/9 STP6N60FI Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time 5/9 STP6N60FI Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/9 Fig. 2: Unclamped Inductive Waveforms STP6N60FI Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 STP6N60FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 3.66 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 Ø 1 2 3 L2 8/9 L4 P011G STP6N60FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9