STMICROELECTRONICS STP6NB25FP

STP6NB25
STP6NB25FP
N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP
PowerMesh MOSFET
■
■
■
■
■
TYPE
VDSS
RDS(on)
ID
STP6NB25
250 V
< 1.1 Ω
6A
STP6NB25FP
250 V
< 1.1 Ω
3.7 A
TYPICAL RDS(on) = 0.9 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
1
2
3
3
1
2
TO-220FP
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC-DC & DC-AC CONVERTERS FOR
TELECOM , INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP6NB25
VDS
VDGR
VGS
Unit
STP6NB25FP
Drain-source Voltage (VGS = 0)
250
V
Drain-gate Voltage (RGS = 20 kΩ)
250
V
±30
Gate- source Voltage
V
ID
Drain Current (continuos) at TC = 25°C
6
3.7
A
ID
Drain Current (continuos) at TC = 100°C
3.8
2.3
A
Drain Current (pulsed)
24
24
A
Total Dissipation at TC = 25°C
75
30
W
Derating Factor
0.6
0.24
W/°C
IDM (●)
PTOT
dv/dt (1)
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Jun 2000
5.5
-
V/ns
2000
–60 to 150
°C
150
°C
(1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
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STP6NB25/FP
THERMAL DATA
TO-220
TO-220FP
1.66
4.17
°C/W
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
6
A
200
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (V GS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
Max.
Unit
V(BR)DSS
600
V
ON (1)
Symbol
Parameter
Test Conditions
Gate Threshold Voltage
VDS = VGS, ID = 250µA
R DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID =3 A
ID(on)
On State Drain Current
VGS(th)
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
4
V
0.9
1.1
Ω
6
A
DYNAMIC
Symbol
gfs (1)
2/9
Parameter
Forward Transconductance
C iss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
Max.
Unit
3
S
260
pF
68
pF
9
pF
STP6NB25/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Parameter
Turn-on Delay Time
Rise Time
Test Conditions
Min.
VDD = 125 V, ID = 3 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
Total Gate Charge
Qgs
Gate-Source Charge
Q gd
Gate-Drain Charge
Typ.
Unit
9
ns
9
ns
12
VDD = 200V, I D = 6 A,
VGS = 10V
Max.
17
nC
7.5
nC
3
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Condit ions
Min.
VDD = 200V, ID = 6 A,
R G = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
8
ns
7
ns
15
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ISD = 6 A, VGS = 0
ISD = 6 A, di/dt = 100A/µs,
VDD = 100V, T j = 150°C
(see test circuit, Figure 5)
Max.
Unit
6
A
24
A
1.6
V
160
ns
720
µC
9
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP6NB25/FP
Thermal Impedence for TO-220
Thermal Impedence for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9
STP6NB25/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP6NB25/FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
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STP6NB25/FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
E
0.050
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
0.106
G1
2.4
2.7
0.094
H2
10.0
10.40
0.393
L2
0.409
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
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STP6NB25/FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
4.4
TYP.
4.6
0.173
TYP.
MAX.
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
8/9
L4
STP6NB25/FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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