STP6NS25 N-CHANNEL 250V - 0.9Ω - 6A TO-220 MESH OVERLAY™ MOSFET TYPE STP6NS25 ■ ■ ■ VDSS RDS(on) ID 250 V < 1.1 Ω 6A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 250 V Drain-gate Voltage (RGS = 20 kΩ) 250 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 6 A ID Drain Current (continuos) at TC = 100°C 4 A Drain Current (pulsed) 24 A Total Dissipation at TC = 25°C 70 W 0.56 W/°C 5 V/ns –65 to 150 °C 150 °C IDM () PTOT Derating Factor dv/dt (1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1) ISD≤ 6A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX November 2002 1/8 STP6NS25 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.79 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 4 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 75 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Gate-body Leakage Current (VDS = 0) VGS = ±20V Min. Typ. Max. 250 Unit V VDS = Max Rating, TC = 125 °C 1 µA 50 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2 A Min. Typ. Max. Unit 2 3 4 V 0.9 1.1 Ω Min. Typ. Max. Unit 1 3.5 S DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2A VDS = 25V, f = 1 MHz, VGS = 0 Ciss Input Capacitance 355 pF Coss Output Capacitance 64 pF Crss Reverse Transfer Capacitance 30 pF STP6NS25 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 125 V, ID = 3 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 4 A, VGS = 10V Typ. Max. Unit 12 ns 18 ns 19 27 nC 3.2 nC 7.5 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(Voff) tf Turn-off- Delay Time Fall Time VDD = 125V, ID = 2 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 70 10 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 200V, ID = 4 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) 13 10 21 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 6 A ISDM (2) Source-drain Current (pulsed) 24 A VSD (1) Forward On Voltage ISD = 6 A, VGS = 0 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 6 A, di/dt = 100A/µs VDD = 30V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 124 ns 0.5 µC 7 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STP6NS25 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STP6NS25 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP6NS25 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP6NS25 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STP6NS25 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. 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