STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP8NC70Z/FP 700V < 1.2 Ω 6.8 A STB8NC70Z/-1 700V < 1.2 Ω 6.8 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 1 D2PAK 3 1 TO-220 2 TO-220FP 12 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. 3 I2PAK APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION ■ WELDING EQUIPMENT ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP(B)8NC70Z(-1) VDS VDGR VGS Unit STP8NC70ZFP Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (RGS = 20 kΩ) 700 V Gate- source Voltage ± 25 V ID Drain Current (continuous) at TC = 25°C 6.8 6.8(*) A ID Drain Current (continuous) at TC = 100°C 4.3 4.3(*) A Drain Current (pulsed) 27 27(*) A Total Dissipation at TC = 25°C 135 40 W Derating Factor 1.08 0.32 W/°C IDM (● ) PTOT IGS ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 3 KV dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) Tstg Storage Temperature VESD(G-S) Tj Gate-source Current (DC) -- Max. Operating Junction Temperature (•)Pulse width limited by safe operating area December 2002 2000 V –65 to 150 °C 150 °C (1)ISD ≤6.8A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX width Limited by maximum temperature allowed 1/13 .(*)Pulse STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 THERMAL DATA TO-220 / D2PAK I2PAK TO-220FP 0.93 3.13 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 6.8 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 354 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 700 ID = 1 mA, VGS = 0 Unit V 0.8 V/°C Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.75 A Min. 3 Typ. 4 5 V 0.90 1.2 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/13 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.75A VDS = 25V, f = 1 MHz, VGS = 0 Min. 6 S 2350 pF Ciss Input Capacitance Coss Output Capacitance 180 pF Crss Reverse Transfer Capacitance 22 pF STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 350 V, ID = 37.5 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 560V, ID = 7.5 A, VGS = 10V Typ. Max. Unit 30 ns 10 ns 55 77 nC 14 nC 21 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 560V, ID = 7.5 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 15 ns 12 ns 20 ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 6.8 A ISDM (2) Source-drain Current (pulsed) 27 A VSD (1) Forward On Voltage ISD = 6.8 A, VGS = 0 1.6 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 7.5 A, di/dt = 100A/µs, VDD = 30V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current ISD Parameter Test Conditions Min. Typ. 680 ns 7.1 µC 21 A GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 50 mA, 90 Ω BVGSO 25 V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 Safe Operating Area For TO-220/D²PAK/I²PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220/D²PAK/I²PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics 4/13 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature 5/13 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 Source-drain Diode Forward Characteristics 6/13 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/13 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/13 L4 P011C STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 TO-220FP MECHANICAL DATA mm DIM. MIN. A 4.4 inch TYP. MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 L2 16 0.630 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 L4 9/13 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 10/13 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 4º 3 V2 0.4 11/13 1 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/13 0.075 0.082 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP8NC70Z - STP8NC70ZFP - STB8NC70Z - STB8NC70Z-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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