STPR120A ® HIGH EFFICIENCY FAST RECOVERY DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 1A VRRM 200 V trr (max) 35 ns FEATURES AND BENEFITS n n n n VERY LOW SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE FAST RECTIFIER EPITAXIAL DIODE SMA DESCRIPTION Single chip rectifier suited to Switched Mode Power Supplies and high frequency DC/DC converters. Packaged in SMA, this surface mount device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 200 V 8 A IF(AV) Average forward current TLead = 125°C δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 30 A Tstg Storage temperature range - 65 to + 150 °C 150 °C Tj Maximum junction temperature THERMAL RESISTANCES Symbol Rth (j-l) Parameter Junction to lead April 2000 - Ed: 3 Value Unit 30 °C/W 1/5 STPR120A STATIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions IR * Reverse leakage current Tests Conditions Tj = 25°C Min. VR = VRRM Tj = 125°C VF ** Pulse test : Forward voltage drop Typ. 180 Tj = 25°C IF = 1 A Tj = 150°C IF = 1 A Max. Unit 3 µA 400 0.94 V 0.69 0.74 Typ. Max. Unit 25 ns * tp = 5ms, δ < 2% ** tp = 380 µs, δ < 2% RECOVERY CHARACTERISTICS Symbol trr Tests Conditions Tj = 25°C IF = 0.50 A IR = 1 A Irr = 0.25 A IF = 1 A VR = VRRM dIF/dt = 50 A/µs 25 35 tFR Tj = 25°C IF = 1 A dIF/dt = 100 A/µs Measured at 1 V 25 VFP Tj = 25°C IF = 1 A 5 dIF/dt = 100 A/µs To evaluate the maximum conduction losses use the following equation : P = 0.62 x IF(AV) + 0.12 x IF2(RMS) 2/5 Min. V STPR120A Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Peak current versus form factor. IM(A) PF(av)(W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ=1 IF(av) (A) 0.2 0.4 0.6 0.8 1.0 1.2 Fig. 3: Average forward current versus ambient temperature (δ=0.5). 10 9 8 7 6 5 4 3 2 1 0 0.0 P=1.0W P=0.5W P=0.25W δ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig. 4: Non repetitive surge peak forward current versus overload duration. IF(av)(A) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 P=1.5W IM(A) 6 Rth(j-a)=Rth(j-l) 5 4 Ta=25°C 3 Rth(j-a)=120°C/W Ta=100°C 2 Ta=125°C 1 t(s) Tamb(°C) 0 25 50 75 100 125 150 Fig. 5: Variation of thermal impedance junction to ambient versus pulse duration (Recommended pad layout, epoxy FR4, e(Cu)=35µm). 0 1E-3 1E-2 1E-1 1E+0 Fig. 6: Forward voltage drop versus forward current (maximum values). IFM(A) Zth(j-a)(°C/W) 50.00 200 100 10.00 Tj=150°C Tj=25°C 1.00 10 0.10 Single pulse tp(s) 1 1E-3 1E-2 1E-1 1E+0 VFM(V) 1E+1 1E+2 5E+2 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3/5 STPR120A Fig. 7: Junction capacitance versus reverse voltage applied (typical values). Fig. 8: Recovery charges versus dIF/dt QRR(nC) C(pF) 200 20 IF=2A 90% confidence Tj=125°C F=1MHz Tj=25°C 10 100 5 50 2 20 VR(V) 1 1 dIF/dt(A/µs) 10 100 200 Fig. 9: Peak reverse recovery current versus dIF/dt. 10 10 50 100 200 500 Fig. 10: Dynamic parameters versus junction temperature. QRR; IRM[Tj] / QRR; IRM[Tj=125°C] IRM(A) 1.25 20.0 10.0 20 IF=2A 90% confidence Tj=125°C 1.00 IRM 0.75 1.0 QRR 0.50 Tj(°C) dIF/dt(A/µs) 0.1 10 4/5 20 50 100 200 500 0.25 0 25 50 75 100 125 150 STPR120A PACKAGE MECHANICAL DATA SMA DIMENSIONS REF. E1 D E Millimeters Inches Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 A1 A2 C L b FOOT PRINT (in millimeters) n n n 1.65 1.45 2.40 n Marking : R12 Cathode band is inked Epoxy meets UL94-V0 Weight: 0.06g 1.45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5