STPS20100CT ® HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 10A VRRM 100V VF (max) 0.7V Tj (max) 175°C A1 K A2 FEATURES Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability ■ ■ ■ K A1 ■ DESCRIPTION High voltage dual Schottky rectifier suited for switchmode power supplies and other power converters. Packaged in TO-220AB, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. A2 TO-220AB STP20100CT ABSOLUTE MAXIMUM RATINGS Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current δ = 0.5 Value Unit 100 V Per diode 30 A Tc=110°C VR = 60V Per diode Per device 10 20 A A IF(AV) Average forward current IFSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 200 A IRRM Repetitive peak reverse current tp=2µs F=1KHz Per diode 1 A IRSM Non repetitive peak reverse current tp=100µs Per diode 1 A Tstg Storage temperature range Tj dV/dt * : - 65 to + 175 °C Maximum junction temperature (*) 175 °C Critical rate of rise of reverse voltage 1000 V/µs dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) August 2002 - Ed:2C 1/4 STPS20100CT THERMAL RESISTANCES Symbol Parameter Rth (j-c) Junction to case Rth (c) Value Unit Per diode 1.6 °C/W Total 0.9 Coupling 0.15 °C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Parameter IR* Test Conditions Reverse leakage current VF** Max. Unit Tj = 25°C 150 µA Tj = 125°C 100 mA IF = 20A Tj = 125°C 0.85 V IF = 10A Tj = 125°C IF = 20A Tj = 25°C VR = VRRM Forward voltage drop Min. Typ. 0.60 0.70 0.95 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.55 x IF(AV) + 0.015 x IF2(RMS) Fig. 1 : Average forward power dissipation versus average forward current. (Per diode) P F(av)(W) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 2/4 Fig. 2 : Average current versus ambient temperature. (duty cycle : 0.5) (Per diode) 12 =0.2 =0.1 =0.5 I F(av)(A) Rth(j-a)=Rth(j-c) =1 10 =0.05 8 Rth(j-a)=15 o C/W 6 =0.5 T T 4 2 I F(av)(A) 1 2 3 4 5 6 7 8 =tp/T =tp/T tp 9 10 11 12 13 14 15 0 0 tp 25 Tamb( o C) 50 75 100 125 STPS20100CT Fig. 3 : Non repetitive surge peak forward current versus overload duration. (Maximum values) (Per diode) 180 Fig. 4 : Relative variation of thermal transient impedance junction to case versus pulse duration. IM(A) 160 140 120 Tc=25 oC 100 80 Tc=50 o C 60 40 IM Tc=110 oC t =0.5 20 0 0.001 t(s) 0.01 0.1 1 Fig. 5 : Reverse leakage current versus reverse voltage applied. (Typical values) (Per diode) 50.000 I R(mA) Fig. 6 : Junction capacitance versus reverse voltage applied. (Typical values) (Per diode) 2000 C(pF) Tj=125 o C F= 1MH z 10.000 1000 Tj=125 o C 1.000 Tj=100 o C Tj=75 oC 0.100 Tj=50 o C 0.010 VR(V) VR(V) 0.001 0 10 20 30 40 50 60 70 80 90 100 100 1 10 100 Fig. 7 : Forward voltage drop versus forward current. (Maximum values) (Per diode) 1.4 VFM(V) 1.2 Tj=125 o C 1.0 0.8 0.6 0.4 0.2 I FM(A) 0.0 0.1 1 10 100 3/4 STPS20100CT PACKAGE MECHANICAL DATA TO-220AB (JEDEC outline) H2 A REF. C L5 L7 Dia OPTIONAL L6 L2 L9 D F2 F1(x2) L4 M F E G1 G ■ ■ ■ ■ A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Dia. DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.30 4.60 0.169 0.181 1.22 1.32 0.048 0.052 2.40 2.72 0.094 0.107 0.33 0.70 0.013 0.028 0.61 0.93 0.024 0.037 1.14 1.70 0.045 0.067 1.14 1.70 0.045 0.067 4.95 5.15 0.195 0.202 2.40 2.70 0.094 0.106 10.00 10.40 0.394 0.409 16.00 Typ. 0.630 Typ. 13.00 14.00 0.512 0.551 2.65 2.95 0.104 0.116 14.80 15.75 0.583 0.620 6.20 6.60 0.244 0.260 3.40 3.94 0.134 0.155 2.60 Typ. 0.102 Typ. 3.75 3.89 0.148 0.153 Ordering type Marking Package Weight Base qty Delivery mode STPS20100CT STPS20100CT TO-220AB 2.23g 50 Tube Cooling method : by conduction (C) Recommended torque value : 0.55N.m. Maximum torque value : 0.7N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4