STMICROELECTRONICS STPS20120CT

STPS20120C
®
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
2 x 10 A
A1
VRRM
120 V
A2
Tj (max)
175°C
VF (typ)
0.54 V
K
K
FEATURES AND BENEFITS
■
■
■
■
High junction temperature capability
Avalanche rated
Low leakage current
Good trade-off between leakage current and
forward voltage drop
A1
K
A2
TO-220AB
STPS20120CT
DESCRIPTION
Dual center tap Schottky rectifier suited for high
frequency Switch Mode Power Supply.
Packaged in TO-220AB & I2PAK, this device is
intended to be used in notebook & LCD adaptors,
desktop SMPS, providing in these applications a
margin between the remaining voltages applied on
the diode and the voltage capability of the diode.
Table 2: Order Codes
Part Number
STPS20120CT
STPS20120CR
K
A1
A2
I2PAK
STPS20120CR
Marking
STPS20120CT
STPS20120CR
Table 3: Absolute Ratings (limiting values, per diode)
Symbol
VRRM
IF(RMS)
Parameter
Value
Unit
Repetitive peak reverse voltage
120
V
RMS forward voltage
30
A
10
20
A
δ = 0.5
Tc = 150°C
Per diode
Per device
IF(AV)
Average forward current
IFSM
Surge non repetitive forward current
tp = 10ms sinusoidal
150
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
4600
W
-65 to + 175
°C
175
°C
Tstg
Tj
Storage temperature range
Maximum operating junction temperature *
1
dPtot
* : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink
dTj
Rth ( j – a )
February 2005
REV. 1
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STPS20120C
Table 4: Thermal Parameters
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value
3
1.8
0.6
Per diode
Total
Total
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 5: Static Electrical Characteristics (per diode)
Symbol
Parameter
Tests conditions
Tj = 25°C
VR = VRRM
Reverse leakage current
Tj = 125°C
IR *
Tj = 25°C
Tj = 125°C
VF **
Tj = 25°C
Forward voltage drop
Tj = 125°C
Tj = 25°C
Min.
Typ
Max.
10
Unit
µA
1.5
5
mA
0.7
IF = 2.5A
0.54
0.58
0.92
IF = 10A
0.7
V
0.74
IF = 20A
1.02
Tj = 125°C
0.81
0.86
* tp = 5 ms, δ < 2%
Pulse test:
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.62 x IF(AV) + 0.012 IF (RMS)
Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
PF(AV)(W)
11
10
9
δ = 0.05
δ = 0.1
δ = 0.2
Rth(j-a)=Rth(j-c)
δ = 0.5
10
9
8
δ=1
7
8
7
6
Rth(j-a)=15°C/W
6
5
5
4
4
3
3
T
2
T
2
1
IF(AV)(A)
δ=tp/T
0
0
2/6
1
2
3
4
5
6
7
8
9
10
11
1
tp
δ=tp/T
0
12
13
0
25
Tamb(°C)
tp
50
75
100
125
150
175
STPS20120C
Figure 3: Normalized avalanche
derating versus pulse duration
power
Figure 4: Normalized avalanche
derating versus junction temperature
PARM(tp)
PARM(1µs)
power
PARM(tp)
PARM(25°C)
1
1.2
1
0.1
0.8
0.6
0.4
0.01
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
25
1000
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
50
75
100
125
150
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
IM(A)
Zth(j-c)/Rth(j-c)
140
1.0
0.9
120
0.8
100
0.7
0.6
80
δ = 0.5
Tc=25°C
0.5
60
Tc=75°C
0.4
0.3
40
0.2
Tc=125°C
IM
20
δ = 0.2
T
δ = 0.1
Single pulse
0.1
t
t(s)
δ=0.5
δ=tp/T
tp(s)
tp
0.0
0
1.E-03
1.E-02
1.E-01
1.E+00
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
1.E-03
1.E-02
1.E-01
1.E+00
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
IR(mA)
C(pF)
1.E+01
1000
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+00
Tj=125°C
1.E-01
Tj=100°C
Tj=75°C
1.E-02
100
Tj=50°C
1.E-03
Tj=25°C
1.E-04
VR(V)
VR(V)
10
1.E-05
0
10
20
30
40
50
60
70
80
90
100
110
120
1
10
100
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STPS20120C
Figure 9: Forward voltage drop versus forward
current (per diode)
IFM(A)
100
Tj=125°C
(maximum values)
Tj=25°C
(maximum values)
Tj=125°C
(typical values)
10
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Figure 10: TO-220AB Package Mechanical Data
DIMENSIONS
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
M
G1
E
G
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
F2
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
L4
13
14
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
M
Diam.
4/6
Inches
Min.
L2
F
Millimeters
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
STPS20120C
Figure 11: I2PAK Package Mechanical Data
DIMENSIONS
REF.
A
E
A
c2
L2
D
L1
Max.
Min.
Max.
4.40
4.60
0.173
0.181
2.49
2.69
0.098
0.106
0.70
0.93
0.028
0.037
b1
1.14
1.70
0.044
0.067
b2
1.14
1.70
0.044
0.067
c
0.45
0.60
0.018
0.024
c2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
L
b1
c
Min.
b
A1
b
Inches
A1
b2
e
Millimeters
E
10.0
10.4
0.394
0.409
L
13.1
13.6
0.516
0.535
L1
3.48
3.78
0.137
0.149
L2
1.27
1.40
0.050
0.055
Table 6: Ordering Information
Ordering type
STPS20120CT
STPS20120CR
■
■
■
■
Marking
STPS20120CT
STPS20120CR
Package
TO-220AB
I2PAK
Weight
2.23 g
1.49 g
Base qty
50
50
Delivery mode
Tube
Tube
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
Table 7: Revision History
Date
Revision
18-Feb-2005
1
Description of Changes
First issue.
5/6
STPS20120C
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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