STMICROELECTRONICS STPS2H100RL

STPS2H100
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2A
VRRM
100 V
Tj (max)
175°C
VF (max)
0.70 V
FEATURES AND BENEFITS
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■
■
■
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NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
AVALANCHE CAPABILITY SPECIFIED
DO-41
DESCRIPTION
Axial Power Schottky rectifier suited for Switch
Mode Power Supply and high frequency
DC/DC converters. Packaged in DO-41, this
device is intended for use in low voltage, high
frequency inverters and small battery
chargers.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
RMS forward current
10
A
2
A
δ = 0.5
IF(AV)
Average forward current
TL = 120°C
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
50
A
IRRM
Repetitive peak reverse current
tp = 2 µs square
1
A
PARM
Repetitive peak avalanche power
tp = 1µs
1500
W
- 65 to + 175
°C
175
°C
10000
V/µs
Tstg
Tj
dV/dt
* :
Storage temperature range
F = 1kHz
Tj = 25°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
July 2003 - Ed: 2A
1/4
STPS2H100
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
°C/W
Rth(j-a)
Junction to ambient
Lead length = 10 mm
100
Rth(j-l)
Junction to lead
Lead lenght = 10 mm
35
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current
Tj = 25°C
Min.
Typ.
Forward voltage drop
Unit
1
µA
0.5
mA
0.86
V
VR = VRRM
Tj = 125°C
VF **
Max.
0.2
Tj = 25°C
IF = 2 A
Tj = 125°C
IF = 2 A
Tj = 25°C
IF = 4 A
Tj = 125°C
IF = 4 A
0.65
0.70
0.92
0.72
0.78
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
Pulse test :
To evaluate the maximum conduction losses use the following equation :
P = 0.62 x IF(AV) + 0.04 x IF2(RMS)
Fig. 1: Conduction losses versus average current.
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(AV)(W)
IF(AV)(A)
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
δ = 0.1
δ = 0.2
2.2
δ = 0.5
Rth(j-a)=Rth(j-I)
2.0
δ = 0.05
1.8
1.6
δ=1
1.4
Rth(j-a)=100°C/W
1.2
1.0
0.8
0.6
T
T
0.4
IF(AV)(A)
δ=tp/T
0.2
tp
δ=tp/T
Tamb(°C)
tp
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2.2
Fig. 3: Normalized avalanche power derating
versus pulse duration.
50
75
100
125
150
175
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
25
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.4
0.01
0.2
0.001
0.01
2/4
Tj(°C)
tp(µs)
0.1
1
0
10
100
1000
0
25
50
75
100
125
150
STPS2H100
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
Fig. 6: Relative variation of thermal impedance
junction to ambient versus pulse duration.
IM(A)
Zth(j-a)/Rth(j-a)
10
1.0
9
0.9
8
0.8
7
0.7
Ta=25°C
6
0.6
δ = 0.5
Ta=75°C
5
0.5
4
0.4
0.3
Ta=125°C
3
IM
2
t
1
δ = 0.1
0.1
t(s)
δ=0.5
T
δ = 0.2
0.2
δ=tp/T
tp(s)
Single pulse
tp
0.0
0
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
C(pF)
1.E+03
100
Tj=150°C
1.E+02
F=1MHz
VOSC=30mV
Tj=25°C
Tj=125°C
Tj=100°C
1.E+01
Tj=75°C
1.E+00
Tj=50°C
1.E-01
Tj=25°C
VR(V)
VR(V)
10
1.E-02
0
20
40
60
80
1
100
Fig. 9-1: Forward voltage drop versus forward
current (low level).
10
100
Fig. 9-2: Forward voltage drop versus forward
current (high level).
IFM(A)
IFM(A)
100
2.0
1.8
Tj=125°C
(maximum values)
Tj=125°C
(maximum values)
1.6
1.4
1.2
Tj=125°C
(typical values)
Tj=125°C
(typical values)
1.0
Tj=25°C
(maximum values)
10
0.8
Tj=25°C
(maximum values)
0.6
0.4
0.2
VFM(V)
VFM(V)
1
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
3/4
STPS2H100
Fig. 10: Thermal resistance versus lead length.
Rth(°C/W)
120
Rth(j-a)
100
80
60
Rth(j-I)
40
20
Lleads(mm)
0
5
10
15
20
25
PACKAGE MECHANICAL DATA
DO-41 (plastic)
REF.
C
A
C
Millimeters
O
/ B
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
D
0.712
O
/D
O
/D
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DIMENSIONS
Ordering type
Marking
STPS2H100
STPS2H100
cathode ring
STPS2H100RL
STPS2H100
cathode ring
Package
DO-41
Weight
0.34 g
1.102
0.863
0.028
0.034
Base qty
Delivery mode
2000
Ammopack
5000
Tape & Reel
EPOXY MEETS UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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