STMICROELECTRONICS STPS60H100CT

STPS60H100C
®
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
Tj
175°C
VF(max)
0.72 V
A1
K
A2
K
FEATURES AND BENEFITS
■
■
■
■
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High junction temperature capabiliy
Low leakage current
Low thermal resistance
High frequency operation
Avalanche specification
A2
A1
K
TO-220AB
STPS60H100CT
DESCRIPTION
Dual center tab Schottky rectifier suited for High
Frequency server and telecom base station
SMPS. Packaged in TO-220AB, this device combines high current rating and low volume to enhance both reliability and power density of the
application.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS)
RMS forward voltage
Unit
V
60
A
A
IFSM
Tc = 150°C
δ = 0.5
Surge non repetitive forward current
Per diode
Per device
tp = 10ms sinusoidal
30
60
300
A
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
18100
W
-65 to + 175
°C
175
°C
10000
V/µs
IF(AV)
Tstg
Tj
dV/dt
Average forward current
Value
100
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
1
dPt ot
* : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink
Rth ( j – a )
dTj
Order Codes
Part Number
STPS60H100CT
August 2004
Marking
STPS60H100CT
REV. 1
1/5
STPS60H100C
THERMAL RESISTANCE
Symbol
Rth(j-c) Junction to case
Parameter
Value
1.0
0.7
0.4
Per diode
Total
Coupling
Rth(c)
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current Tj = 25°C
VR = VRRM
Min.
Tj = 125°C
VF **
Pulse test:
Forward voltage drop
Typ
2
Max.
10
Unit
µA
3
10
mA
0.84
V
Tj = 25°C
IF = 30A
Tj = 125°C
IF = 30A
0.67
0.72
Tj = 25°C
IF = 60A
0.92
0.98
Tj = 125°C
IF = 60A
0.8
0.84
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.6 x IF(AV) + 0.004 IF (RMS)
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®
STPS60H100C
Fig 1: Average forwatd power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(AV)(A)
PF(AV)(W)
26
35
δ = 0.1
24
δ = 0.2
δ = 0.5
Rth(j-a)=Rth(j-c)
δ = 0.05
22
30
20
25
δ=1
18
16
20
14
12
15
10
Rth(j-a)=15°C/W
8
10
6
T
T
4
5
2
IF(AV)(A)
δ=tp/T
0
0
5
10
15
20
25
δ=tp/T
tp
tp
Tamb(°C)
0
30
35
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0
50
75
100
125
150
175
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
25
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.01
0.4
0.2
Tj(°C)
tp(µs)
0.001
0.01
0.1
1
0
10
100
0
1000
Fig. 5: Non repetitive surge peak forward current
versus overload duration.
25
50
75
100
125
150
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse.
IM(A)
Zth(j-c)/Rth(j-c)
400
1.0
350
0.9
0.8
300
0.7
250
0.6
TC=50°C
200
0.5
0.4
150
TC=75°C
0.3
100
TC=125°C
IM
50
t
0.1
t(s)
δ=0.5
0.2
Single pulse
tp(s)
0.0
0
1.E-03
®
1.E-02
1.E-01
1.E+00
1.E-03
1.E-02
1.E-01
1.E+00
3/5
STPS60H100C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(mA)
C(nF)
1.E+02
10.0
F=1MHz
VOSC=30mVRMS
Tj=25°C
Tj=150°C
1.E+01
Tj=125°C
1.E+00
Tj=100°C
1.E-01
1.0
Tj=75°C
1.E-02
Tj=50°C
1.E-03
Tj=25°C
VR(V)
VR(V)
1.E-04
0
10
20
30
40
50
60
0.1
70
80
90
100
1
10
100
Fig. 9: Forward voltage drop versus forward
current.
IFM(A)
100
Tj=125°C
(maximum values)
Tj=25°C
(maximum values)
Tj=125°C
(typical values)
10
VFM(V)
1
0.0
4/5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
®
STPS60H100C
PACKAGE MECHANICAL DATA
TO-220AB
REF.
A
H2
Dia
C
L5
L7
L6
L2
F2
F1
D
L9
L4
F
M
G1
E
G
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
Diam.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.40
4.60
0.173
0.181
1.23
1.32
0.048
0.051
2.40
2.72
0.094
0.107
0.49
0.70
0.019
0.027
0.61
0.88
0.024
0.034
1.14
1.70
0.044
0.066
1.14
1.70
0.044
0.066
4.95
5.15
0.194
0.202
2.40
2.70
0.094
0.106
10
10.40
0.393
0.409
16.4 typ.
0.645 typ.
13
14
0.511
0.551
2.65
2.95
0.104
0.116
15.25
15.75
0.600
0.620
6.20
6.60
0.244
0.259
3.50
3.93
0.137
0.154
2.6 typ.
0.102 typ.
3.75
3.85
0.147
0.151
ORDERING INFORMATION
Ordering type
STPS60H100CT
■
■
■
■
Marking
STPS60H100CT
Package
TO-220AB
Weight
2.20 g
Base qty
50
Delivery mode
Tube
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 m.N.
Maximum torque value: 1.0 m.N.
REVISION HISTORY
Table 1: Revision history
Date
02-Aug-2004
Revision
1
Description of Changes
First issue
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2004 STMicroelectronics - All rights reserved
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®
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