STMICROELECTRONICS STPS60L15CW

STPS60L15CW
®
LOW DROP OR-ing POWER SCHOTTKY DIODE
MAJOR PRODUCT CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
15 V
Tj (max)
125°C
VF (max)
0.33 V
A1
K
A2
FEATURES AND BENEFITS
■
■
■
■
VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK SIZE
OPERATION JUNCTION TEMPERATURE: 125°C
REVERSE VOLTAGE SUITED TO OR-ing OF
3V, 5V and 12V RAILS
AVALANCHE CAPABILITY SPECIFIED
A2
K
A1
DESCRIPTION
TO-247
Dual center tap schottky rectifier packaged in
TO-247 and suited for N+1 redundancy
operations, this device has an optimized forward
voltage drop to reduce the power losses in the
application.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(AV)
Parameter
Value
15
Unit
V
40
A
Per diode
30
A
Per device
60
Repetitive peak reverse voltage
RMS forward current
Average forward current
Tcase = 115°C
δ = 0.5
IFSM
Surge non repetitive forward
current
tp = 10 ms Sinusoidal
IRRM
Peak repetitive reverse current
IRSM
PARM
Tstg
Tj
dV/dt
* :
400
A
tp = 2µs F = 1kHz
2
A
Non repetitive peak reverse current
tp = 100µs
3
A
Repetitive peak avalanche power
tp = 1µs
Storage temperature range
24000
W
- 65 to + 150
°C
125
°C
10000
V/µs
Tj = 25°C
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth( j − a )
July 2003 - Ed: 1A
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STPS60L15CW
THERMAL RESISTANCES
Symbol
Rth(j-c)
Parameter
Value
0.8
0.55
0.3
Per diode
Total
Coupling
Junction to case
Rth(c)
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol
IR *
Parameter
Tests Conditions
Reverse leakage current
Min.
Forward voltage drop
Max.
16
Unit
mA
0.35
0.85
A
V
VR = VRRM
Tj = 25°C
Tj = 100°C
VF *
Typ.
Tj = 25°C
IF = 30 A
0.41
Tj = 25°C
IF = 60 A
0.49
Tj = 125°C
IF = 30 A
0.27
0.33
IF = 60 A
0.39
0.44
Tj = 125°C
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.22 x IF(AV) + 0.0036 IF2(RMS)
Fig. 1: Conduction losses versus average
current).
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
PF(AV)(W)
IF(AV)(A)
15.0
35
δ = 0.5
12.5
Rth(j-a)=Rth(j-c)
30
δ = 0.2
δ = 0.1
10.0
25
δ=1
δ = 0.05
20
Rth(j-a)=15°C/W
7.5
15
5.0
10
T
2.5
5
IF(AV)(A)
δ=tp/T
Tamb(°C)
tp
0.0
0
0
5
10
15
20
25
30
35
40
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0
50
75
100
125
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
25
1.2
PARM(tp)
PARM(25°C)
1
0.1
0.8
0.6
0.01
0.4
0.2
0.01
2/4
Tj(°C)
tp(µs)
0.001
0
0.1
1
10
100
1000
0
25
50
75
100
125
150
STPS60L15CW
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values).
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
IM(A)
Zth(j-c)/Rth(j-c)
500
1.0
450
0.9
400
0.8
350
0.7
δ = 0.5
300
0.6
TC=25°C
250
0.5
200
0.4
δ = 0.2
0.3
δ = 0.1
TC=50°C
150
IM
100
TC=100°C
t
50
T
0.2
δ=0.5
Single pulse
0.1
t(s)
δ=tp/T
tp(s)
tp
0.0
0
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
1.E-03
1.E-02
1.E-01
1.E+00
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(mA)
C(nF)
1.E+04
10.0
F=1MHz
VOSC=30mV
Tj=25°C
Tj=125°C
1.E+03
Tj=100°C
1.E+02
Tj=75°C
Tj=50°C
1.E+01
Tj=25°C
VR(V)
VR(V)
1.0
1.E+00
0.0
2.5
5.0
7.5
10.0
12.5
15.0
1
10
100
Fig. 9: Forward voltage drop versus forward
current.
IFM(A)
1000
Tj=125°C
(maximum values)
100
Tj=125°C
(typical values)
Tj=25°C
(maximum values)
10
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
3/4
STPS60L15CW
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
REF.
V
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
Dia.
V
A
H
L5
L
L2 L4
F2
F1
L1
F3
V2
F4
D
L3
F(x3)
M
G
=
■
■
■
=
0.203
0.102
0.031
0.055
0.118
0.078
0.094
0.133
0.429
0.620
0.793
0.169
0.728
0.582
1.362
0.216
0.118
5°
60°
0.143
Cooling method: C
Recommended torque value: 0.8 m.N
Maximum torque value: 1.0 m.N
Ordering type
Marking
STPS60L15CW STPS60L15CW
■
E
A
4.85
5.15 0.191
D
2.20
2.60 0.086
E
0.40
0.80 0.015
F
1.00
1.40 0.039
F1
3.00
F2
2.00
F3 2.00
2.40 0.078
F4 3.00
3.40 0.118
G
10.90
H 15.45
15.75 0.608
L 19.85
20.15 0.781
L1 3.70
4.30 0.145
L2
18.50
L3 14.20
14.80 0.559
L4
34.60
L5
5.50
M
2.00
3.00 0.078
V
5°
V2
60°
Dia. 3.55
3.65 0.139
Package
Weight
Base qty
Delivery mode
TO-247
4.4 g.
30
Tube
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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