STPS745D/F/G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM 7.5 A 45 V Tj (max) 175 °C VF (max) 0.57 V FEATURES AND BENEFITS A A K VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AC Insulating voltage = 2000V DC Capacitance = 12pF K TO-220AC STPS745D ISOWATT220AC STPS745F K DESCRIPTION Single Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged either in TO-220AC, ISOWATT220AC or D2PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. A NC D2PAK STPS745G ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 20 7.5 A A 150 A 1 2 A A - 65 to + 175 °C 175 °C 10000 V/µs IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM IRSM Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range tp = 2 µs square F = 1kHz tp = 100 µs square Tstg Tj dV/dt * : Tc = 160°C TO-220AC / D2PAK ISOWATT220AC Tc = 145°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj June 1999 - Ed: 4D 1/7 STPS745D/F/G THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Value Unit TO-220AC / D2PAK 3.0 °C/W ISOWATT220AC 5.5 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR * Reverse leakage current Tests Conditions Tj = 25°C Pulse test : Forward voltage drop Tj = 125°C IF = 7.5 A Tj = 25°C IF = 15 A Tj = 125°C IF = 15 A * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.020 IF2(RMS) 2/7 Typ. Max. Unit 100 µA 5 15 mA 0.5 0.57 V VR = VRRM Tj = 125°C VF * Min. 0.84 0.65 0.72 STPS745D/F/G Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average current temperature (δ = 0.5). IF(av)(A) PF(av)(W) 6 δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 5 δ=1 4 3 2 T 1 δ=tp/T IF(av) (A) 0 0 1 versus ambient 2 3 4 5 6 7 tp 8 9 10 Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (TO-220AC and D2PAK). 9 8 7 6 5 4 3 2 1 0 Rth(j-a)=Rth(j-c) TO-220AC ISOWATT220AB Rth(j-a)=15°C/W Rth(j-a)=40°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 175 Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (ISOWATT220AC). IM(A) IM(A) 120 80 70 100 60 80 50 60 Tc=50°C 40 Tc=100°C 30 40 Tc=150°C IM 20 t 0 1E-3 1E-2 1E-1 1E+0 Fig. 4-1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AC and D2PAK). IM t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 4-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AC). Zth(j-c)/Rth(j-c) 1.0 1.0 0.8 0.8 0.6 δ = 0.5 0.4 0.2 Tc=150°C 20 Zth(j-c)/Rth(j-c) 0.6 Tc=100°C 10 t(s) δ =0.5 Tc=50°C δ = 0.5 0.4 δ = 0.2 0.2 δ = 0.1 0.0 1E-4 T T tp(s) Single pulse 1E-3 1E-2 δ=tp/T 1E-1 tp 1E+0 δ = 0.2 δ = 0.1 tp(s) Single pulse 0.0 1E-3 1E-2 1E-1 δ=tp/T 1E+0 tp 1E+1 3/7 STPS745D/F/G Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(µA) 1000 5E+4 1E+4 Tj=150°C 1E+3 Tj=100°C F=1MHz Tj=25°C Tj=125°C 500 Tj=75°C 1E+2 Tj=50°C 1E+1 200 Tj=25°C 1E+0 VR(V) 1E-1 0 5 10 15 20 25 VR(V) 30 35 40 45 Fig. 7: Forward voltage drop versus forward current (maximum values). 100 1 2 5 10 20 50 Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness: 35µm). IFM(A) Rth(j-a) (°C/W) 100.0 80 70 Tj=125°C Typical values 60 Tj=25°C 10.0 50 40 Tj=125°C 30 1.0 20 10 VFM(V) 0.1 0.0 4/7 0.2 0.4 0.6 0.8 0 1.0 1.2 1.4 1.6 S(Cu) (cm ) 0 2 4 6 8 10 12 14 16 18 20 STPS745D/F/G PACKAGE MECHANICAL DATA D2PAK (Plastic) REF. A E C2 L2 D L L3 A1 B2 R C B G A2 M * V2 * FLAT ZONE NO LESSTHAN 2mm DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 A1 A2 2.49 0.03 2.69 0.23 0.098 0.001 0.106 0.009 B 0.70 0.93 0.027 0.037 B2 C 1.14 0.45 1.70 0.60 0.045 0.017 0.067 0.024 C2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.40 0.393 0.409 G L 4.88 15.00 5.28 15.85 0.192 0.590 0.208 0.624 L2 1.27 1.40 0.050 0.055 L3 M 1.40 2.40 1.75 3.20 0.055 0.094 0.069 0.126 R V2 0.40 typ. 0° 8° 0.016 typ. 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 5/7 STPS745D/F/G PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. H2 A C L5 L7 ØI L6 L2 D L9 F1 L4 M F E G Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D E 2.40 0.49 2.72 0.70 0.094 0.019 0.107 0.027 F 0.61 0.88 0.024 0.034 F1 G 1.14 4.95 1.70 5.15 0.044 0.194 0.066 0.202 H2 L2 10.00 10.40 16.40 typ. 0.393 0.409 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 L6 2.65 15.25 2.95 15.75 0.104 0.600 0.116 0.620 L7 6.20 6.60 0.244 0.259 L9 M 3.50 3.93 2.6 typ. 0.137 0.154 0.102 typ. 3.75 0.147 Diam. I 6/7 Millimeters 3.85 0.151 STPS745D/F/G PACKAGE MECHANICAL DATA ISOWATT220AC DIMENSIONS A B REF. Diam H L6 L7 L2 L3 F1 D F E Millimeters Min. Typ. Max. Inches Min. Typ. Max. A B 4.40 2.50 4.60 2.70 0.173 0.098 0.181 0.106 D 2.40 2.75 0.094 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 G 1.15 4.95 1.70 5.20 0.045 0.195 0.067 0.205 H 10.00 10.40 0.394 0.409 L2 L3 16.00 0.630 28.60 30.60 1.125 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 1.205 G Type Marking Package Weight Base qty Delivery mode STPS745D STPS745D TO-220AC 1.86 g. 50 Tube STPS745F STPS745F ISOWATT220AC 2 g. 50 Tube STPS745G STPS745G D2PAK 1.48 g. 50 Tube STPS745G-TR STPS745G D2PAK 1.48 g. 1000 Tape & reel Cooling method: by conduction (C) Recommended torque value: 0.55 N.m Maximum torque value: 0.7 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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