STPS80L15CY LOW DROP OR-ing POWER SCHOTTKY RECTIFIER PRELIMINARY DATASHEET MAIN PRODUCT CHARACTERISTICS A1 K IF(AV) 2 x 40 A VRRM Tj (max) 15 V 125 °C VF (max) 0.33 V A2 FEATURES AND BENEFITS A2 K Max247 PACKAGE, DUAL DIODE CONSTRUCTION, 2 x 40A 15V BLOCKING VOLTAGE SUITABLE FOR 5V AND 12V OR-ing EXTREMELY LOW VOLTAGE VOLTAGE DROP: 0.33V @ 100°C OPERATING JUNCTION TEMPERATURE: 125°C A1 Max247 DESCRIPTION The STPS80L15CY uses proprietary barrier technology to optimize forward voltage drop for OR-ing functions in n-1 fault tolerant Switch Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 15 V IF(RMS) RMS forward current 50 A 40 80 A 400 A 2 A - 65 to + 150 °C 125 °C 10000 V/µs IF(AV) Average forward current Tc = 110°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square Tstg Storage temperature range Tj dV/dt Maximum operating junction temperature Critical rate of rise of reverse voltage November 1999 - Ed: 4B Per diode Per device 1/4 STPS80L15CY THERMAL RESISTANCES Symbol Parameter Junction to case Rth (j-c) Rth (c) Value Unit Per diode 0.7 °C/W Total 0.5 Coupling 0.3 When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter IR * Reverse leakage current Tests conditions Tj = 25°C Min. 280 VR = 12V 0.44 VR = 15V Tj = 100°C VF * Forward voltage drop Pulse test : Unit 4 mA 0.53 Tj = 25°C IF = 40 A Tj = 100°C IF = 40 A Tj = 25°C IF = 80 A Tj = 100°C IF = 80 A 400 11 Tj = 100°C Tj = 25°C Max. VR = 5V Tj = 100°C Tj = 25°C Typ. 0.30 1.1 A 16 mA 1.3 A 0.42 V 0.33 0.55 0.40 0.46 * tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.20 x IF(AV) + 0.0032 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). 22 20 18 16 14 12 10 8 6 4 2 0 PF(av)(W) δ = 0.1 δ = 0.2 δ = 0.5 δ = 0.05 δ=1 T IF(av) (A) 0 2/4 5 δ=tp/T tp 10 15 20 25 30 35 40 45 50 55 60 Fig. 2: Average forward current versus ambient temperature (δ=0.5, per diode). 50 45 40 35 30 25 20 15 10 5 0 IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=5°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 STPS80L15CY Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). 600 Fig. 4: Relative variation of thermal impedance junction to case versus pulse (per diode). Zth(j-c)/Rth(j-c) IM(A) 1.0 500 0.8 400 δ=0.5 Tc=25°C 0.6 Tc=50°C 300 0.4 200 δ=0.2 δ=0.1 Tc=75°C IM 100 t 0 1E-3 Single pulse t(s) δ =0.5 1E-2 1E-1 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). δ=tp/T tp(s) 0.0 1E-3 1E-2 1E-1 tp 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(mA) 10 1E+3 T 0.2 C(nF) F=1MHz Tj=25°C Tj=100°C Tj=75°C 1E+2 5 1E+1 Tj=25°C 2 1E+0 VR(V) VR(V) 1E-1 0 1 2 3 4 5 6 7 8 1 9 10 11 12 13 14 15 1 2 5 10 20 Fig. 7: Forward voltage drop versus forward current (per diode). 200 IFM(A) 100 Tj=100°C (typical values) Tj=100°C (Maximum values) 10 Tj=25°C (Maximum values) VFM(V) 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 3/4 STPS80L15CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E L1 A1 L b1 b2 e Ordering type b Marking STPS80L15CY STPS80L15CY Inches Min. Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 D 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 E 15.30 15.90 0.602 0.626 L 14.20 15.20 0.559 0.598 L1 3.70 4.30 0.146 0.169 A D Millimeters c Package Weight Base qty Delivery mode Max247 4.4g 30 Tube Cooling method: by conduction (C) Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4