STS3DPFS30L ® P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS(on) ID 30V <0.16Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage StripFET in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 3 A ID Drain Current (continuous) at T c = 100 o C 1.9 A Drain Current (pulsed) 12 A 2 W IDM (•) P tot o Total Dissipation at T c = 25 C SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol V RRM I F(RMS) Parameter Repetitive Peak Reverse Voltage RMS Forward Current Value Unit 30 V 20 A I F(AV) Average Forward Current T L =125 o C δ =0.5 3 A I FSM Surge Non Repetitive Forward Current tp= 10 ms Sinusoidal 75 A I RSM Non Repetitive Peak Reverse Current tp=100 µs 1 A dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs (•) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 1/5 STS3DPFS30L THERMAL DATA R thj-amb R thj-amb T stg Tj (*)Thermal Resistance Junction-ambient MOSFET S.O. Dual Operating (*) Thermal Resistance Junction-ambientSCHOTTKY Storage Temperature Range Maximum Junction Temperature (*) mounted on FR-4 board (steady state) o 78 62 100 -65 to 150 150 C/W C/W o C/W o C o C o MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage V GS = ± 16 V Current (V DS = 0) Min. Typ. Max. 30 Unit V 1 10 µA µA ±1 µA Typ. Max. Unit 2.5 V 0.13 0.15 0.16 0.19 Ω Ω T c = 125 o C ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA R DS(on) Static Drain-source On V GS = 10V Resistance V GS = 4.5V I D = 1.5 A I D = 1.5 A I D(on) Min. 1 On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 3 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Forward Transconductance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V Input Capacitance Output Capacitance Reverse Transfer Capacitance f = 1 MHz I D =1.5 A V GS = 0 Min. Typ. Max. Unit 3.5 S 510 170 55 pF pF pF STS3DPFS30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay Time Rise Time V DD = 15 V I D = 1.5 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) 15 37 Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 15 V 5.5 1.7 1.8 7.5 nC nC nC Typ. Max. Unit ID = 3 A VGS = 4.5 V ns ns SWITCHING OFF Symbol t d(of f) tr Parameter Turn-off Delay Time Fall Time Test Conditions Min. 15 29 V DD = 15 V I D = 1.5 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) ns ns SOURCE DRAIN DIODE Symbol Parameter ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage t rr Q rr I RRM Reverse Time Reverse Charge Reverse Current Test Conditions I SD = 3 A Min. Typ. V GS = 0 Recovery I SD = 3 A di/dt = 100 A/µs V DD = 15V T j = 150 o C Recovery (see test circuit, figure 5) Recovery Max. Unit 3 12 A A 2 V 18 ns 12 nC 1.33 Α (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol IR (∗) V F (∗) Parameter Reversed Current Test Conditions o Leakage T J= 25 C T J= 125 o C Forward Voltage drop T J= 25 o C T J= 125 o C Min. Typ. Max. Unit V R =30V V R =30V 0.03 0.2 100 mA mA I F =3A I F =3A 0.38 0.51 0.46 V V 3/5 STS3DPFS30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 inch MAX. MIN. TYP. 1.75 0.1 0.068 0.25 a2 MAX. 0.003 0.009 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 5.0 0.188 0.196 6.2 0.228 c1 45 (typ.) D 4.8 E 5.8 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 4/5 STS3DPFS30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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