STS4DPFS30L P-CHANNEL 30V - 0.07Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS RDS(on) ID 30 V < 0.08 Ω 4A IF(AV) VRRM VF(MAX) 3A 30 V 0.51 V DESCRIPTION This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 20 V ID Drain Current (continuos) at TC = 25°C 4 A ID Drain Current (continuos) at TC = 100°C 3.4 A Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C 1.6 W IDM (●) PTOT Gate- source Voltage SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Value Unit Repetitive Peak Reverse Voltage Parameter 30 V RMS Forward Current 20 A IF(AV) Average Forward Current TL = 125°C δ = 0.5 3 A IFSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal 75 A IRRM Repetitive Peak Reverse Current tp = 2 µs F = 1 kHz 1 A IRSM Non Repetitive Peak Reverse Current tp = 100 µs 1 A dv/dt Critical Rate Of Rise Of Reverse Voltage October 2000 Note: For the P-CHANNEL 10000 MOSFET actual polarity of Voltages V/µs and current has to be reversed 1/8 STS4DPFS30L THERMAL DATA Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET 85 °C/W Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY 100 °C/W Tstg Tl Storage Temperature Range -55 to 150 °C 150 °C Junction Temperature (*) Mounted on FR-4 board (Steady State) MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 20 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2 A ID(on) On State Drain Current Min. Typ. Max. Unit 1 1.6 2.5 V 0.07 0.08 Ω 0.08 0.095 VGS = 4.5V, ID = 2 A VDS > ID(on) x RDS(on)max, VGS = 10V 16 A DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. Max. Unit 5 S 1350 pF Ciss Input Capacitance Coss Output Capacitance 490 pF Crss Reverse Transfer Capacitance 130 pF STS4DPFS30L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 15V, ID = 3A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 24V, ID = 6A, VGS = 4.5 V Typ. Max. Unit 25 ns 35 ns 12.5 16 nC 5 nC 3 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 15 V, ID = 2A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) 125 30 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 24 V, ID = 6 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 5) 83 40 75 ns ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 4 A ISDM (2) Source-drain Current (pulsed) 16 A VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 1.2 V ISD = 4 A, di/dt = 100A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 5) ISD Parameter trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions Min. Typ. 45 ns 36 nC 1.6 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS Symbol IR(*) VF(*) Parameter Reversed Leakage Current Forward Voltage Drop Test Conditions Min. Typ. Max. Unit TJ = 25 °C , VR = 30 V TJ = 125 °C , VR = 30 V 0.03 0.2 100 mA mA TJ = 25 °C , IF = 3 A TJ = 125 °C , IF = 3 A 0.46 0.51 0.46 V V 3/8 STS4DPFS30L Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance 4/8 Static Drain-source On Resistance STS4DPFS30L Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS4DPFS30L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS4DPFS30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS4DPFS30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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