STT1NF100 N-CHANNEL 100V - 0.7Ω - 1A SOT23-6L STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STT1NF100 100V <0.8Ω 1A ■ ■ ■ TYPICAL RDS(on) = 0.7Ω EXCEPTIONAL dv/dt CAPABILITY VERY LOW Qg SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC-DC & DC-AC CONVERTERS ■ DC MOTOR CONTROL (DISK DRIVES, etc.) ■ SYNCHRONOUS RECTIFICATION MARKING STQ0 ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 1 A ID Drain Current (continuous) at TC = 100°C 0.6 A 4 A 1.6 W 0.013 W/°C 20 V/ns – 55 to 150 °C IDM () PTOT Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor dv/dt(1) Tstg Tj Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (● ) Pulse width limited by safe operating area September 2002 (1) ISD ≤1A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. 1/6 STT1NF100 THERMAL DATA Rthj-amb(*) Tl Thermal Resistance Junction-ambient Max 78 °C/W Maximum Lead Temperature For Soldering Purpose 260 °C (*) When mounted on FR-4 board of 1inch² pad, 0.5oz Cu ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 100 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Typ. Max. Unit 0.7 0.8 Ω Typ. Max. Unit ON (1) Symbol VGS(th) RDS(on) Parameter Test Conditions Gate Threshold Voltage VDS = VGS, ID = 250µA Static Drain-source On Resistance VGS = 10V, ID = 0.5 A Min. 2 V DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Test Conditions VDS =15V , ID =1A VDS = 25V, f = 1 MHz, VGS = 0 Min. 1 S 105 pF Ciss Input Capacitance Coss Output Capacitance 20 pF Crss Reverse Transfer Capacitance 9 pF STT1NF100 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. Max. Unit 4 ns Rise Time VDD = 50V, ID = 0.5A RG = 4.7Ω VGS = 10V (see test circuit, Figure 1) 5.5 ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 50V, ID = 1A, VGS = 10V (see test circuit, Figure 2) 4 1 1.5 6 nC nC nC Typ. Max. Unit Turn-on Delay Time SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Fall Time Test Conditions Min. 13 6.5 VDD = 50V, ID = 0.5A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 1) ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Max. Unit Source-drain Current 1 A ISDM (2) Source-drain Current (pulsed) 4 A VSD (1) Forward On Voltage ISD = 1A, VGS = 0 1.2 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 1A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see test circuit, Figure 3) trr Qrr IRRM 45 60 2.7 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STT1NF100 Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 Fig. 2: Gate Charge test Circuit STT1NF100 TSOP-6 MECHANICAL DATA mm DIM. MIN. mils TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 e A1 b L c E e1 D E1 5/6 STT1NF100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 6/6