STMICROELECTRONICS STT2PF60L

STT2PF60L
P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L
STripFET™ II POWER MOSFET
PRELIMINARY DATA
■
■
■
TYPE
VDSS
RDS(on)
ID
STT2PF60L
60 V
<0.25 Ω
2A
TYPICAL RDS(on) = 0.20 Ω
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
■ CELLULAR
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
MARKING
■ STP6
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Unit
60
V
60
V
± 15
V
A
ID
Drain Current (continuous) at TC = 25°C
2
ID
Drain Current (continuous) at TC = 100°C
1.3
A
8
A
1.6
W
IDM(•)
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Ptot
(•) Pulse width limited by safe operating area.
May 2002
.
Value
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/6
STT2PF60L
THERMAL DATA
Rthj-amb
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
(**)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
Max
Max
78
156
150
-55 to 150
°C/W
°C/W
°C
°C
(*) Mounted on a 1 in2 pad of 2 oz Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
V(BR)DSS
Min.
Typ.
Max.
60
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 4.5 V
ID = 1 A
ID = 1 A
Min.
Typ.
1
V
0.20
0.24
0.25
0.30
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/6
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS = 10 V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V f = 1 MHz, VGS = 0
ID =1 A
Min.
3
S
313
67
25
pF
pF
pF
STT2PF60L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 1 A
VDD = 30 V
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 1)
44
34
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 30 V ID= 2A VGS=5V
(see test circuit, Figure 2)
5
0.5
2.2
7
nC
nC
nC
Typ.
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
ID = 1 A
VDD = 30 V
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 1)
42
15
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
ISD = 2 A
Min.
Typ.
VGS = 0
di/dt = 100A/µs
ISD = 2 A
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 3)
38
47.5
2.5
Max.
Unit
2
8
A
A
1.2
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
3/6
STT2PF60L
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
4/6
Fig. 2: Gate Charge test Circuit
STT2PF60L
SOT23-6L MECHANICAL DATA
mm
DIM.
MIN.
mils
TYP.
MAX.
MIN.
TYP.
MAX.
A
0.90
1.45
0.035
0.057
A1
0.00
0.15
0.000
0.006
A2
0.90
1.30
0.035
0.051
b
0.25
0.50
0.010
0.020
C
0.09
0.20
0.004
0.008
D
2.80
3.10
0.110
0.122
E
2.60
3.00
0.102
0.118
E1
1.50
1.75
0.059
0.069
L
0.35
0.55
0.014
0.022
e
0.95
0.037
e1
1.90
0.075
A A2
e
A1 b
L
c
E
e1
D
E1
5/6
STT2PF60L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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