STMICROELECTRONICS STTH1L06U

STTH1L06/U/A
®
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
1A
VRRM
600 V
IR (max)
75 µA
Tj (max)
175 °C
VF (max)
1.05 V
trr (max)
80 ns
SMB
STTH1L06U
DO-41
STTH1L06
FEATURES AND BENEFITS
■
■
■
■
Ultrafast switching
Low reverse recovery current
Reduces switching & conduction losses
Low thermal resistance
DESCRIPTION
The STTH1L06/U/A, which is using ST Turbo 2
600V technology, is specially suited as boost
diode in discontinuous or critical mode power
factor corrections.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
SMA
STTH1L06A
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward current
DO-41
SMA / SMB
10
7
A
IF(AV)
Average forward current
Tl = 120°C δ = 0.5 DO-41
TI = 135°C δ = 0.5 SMA
TI = 145°C δ = 0.5 SMB
1
1
1
A
IFSM
Surge non repetitive forward
current
tp = 10 ms Sinusoidal DO-41
tp = 10 ms Sinusoidal SMA / SMB
30
20
A
Tstg
Storage temperature range
- 65 + 175
°C
+ 175
°C
Tj
Maximum operating junction temperature
July 2002 - Ed: 3C
1/8
STTH1L06/U/A
THERMAL PARAMETERS
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to lead
L = 10 mm
Junction to ambient (note 1)
L = 10 mm
Maximum
Unit
DO-41
45
°C/W
SMA
30
SMB
25
DO-41
70
2
Note 1: Rth(j-a) is measured with a copper area S = 5cm (see Fig 12)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
IR
VF
Parameter
Tests conditions
Reverse leakage
current
VR = 600V
Forward voltage drop
IF = 1 A
Min.
Typ.
Tj = 25°C
Tj = 150°C
10
Tj = 25°C
Max.
Unit
1
µA
75
1.3
Tj = 150°C
0.85
V
1.05
To evaluate the maximum conduction losses use the following equation :
P = 0.89 x IF(AV) + 0.165 IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
trr
Reverse recovery
time
IF = 1 A dIF/dt = - 50 A/µs
VR = 30V
Tj = 25°C
tfr
Forward recovery
time
IF = 1 A dIF/dt = 100 A/µs
VFR = 3.5V
VFP
Forward recovery
voltage
IF = 1A dIF/dt = 100 A/µs
2/7
Tests conditions
Min.
Typ.
Max.
Unit
55
80
ns
Tj = 25°C
50
ns
Tj = 25°C
10
V
STTH1L06/U/A
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
P(W)
1.50
δ = 0.05
δ = 0.1
100.0
δ = 0.2
δ = 0.5
1.25
Tj=150°C
(Maximum values)
δ=1
1.00
10.0
Tj=150°C
(Typical values)
0.75
Tj=25°C
(Maximum values)
0.50
1.0
T
0.25
IF(av)(A)
δ=tp/T
0.00
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
VFM(V)
tp
0.1
1.2
1.3
Fig. 3-1: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Leads = 10mm)
0.0
2.5
3.0
3.5
4.0
4.5
SMB
DO-41
Lleads = 10mm
0.9
0.8
0.7
0.6
0.6
δ = 0.5
δ = 0.5
0.5
0.5
0.4
0.4
0.1
2.0
Zth(j-a)/Rth(j-a)
0.7
0.2
1.5
1.0
0.8
0.3
1.0
Fig. 3-2: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, S = 1cm²)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.5
δ = 0.2
0.3
δ = 0.2
T
δ = 0.1
0.2
T
δ = 0.1
tp(s)
Single pulse
0.0
1.E-01
1.E+00
1.E+01
0.1
δ=tp/T
tp(s)
Single pulse
tp
δ=tp/T
0.0
1.E+02
1.E+03
Fig. 3-3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4)
1.E-01
1.E+00
1.E+01
tp
1.E+02
1.E+03
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
Zth(j-a)/Rth(j-a)
1.0
2.5
SMA
0.9
VR=400V
Tj=125°C
2.3
0.8
2.0
0.7
1.8
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
0.6
1.5
δ = 0.5
0.5
1.3
0.4
1.0
0.3
0.2
δ = 0.2
0.8
T
δ = 0.1
0.1
tp(s)
Single pulse
0.0
1.E-01
IF=0.25 x IF(av)
1.E+00
1.E+01
δ=tp/T
1.E+02
0.5
tp
0.3
dIF/dt(A/µs)
0.0
1.E+03
0
5
10
15
20
25
30
35
40
45
50
3/8
STTH1L06/U/A
Fig. 5: Reverse recovery time versus dIF/dt
(90% confidence).
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
trr(ns)
Qrr(nC)
800
220
VR=400V
Tj=125°C
700
VR=400V
Tj=125°C
200
IF=2 x IF(av)
180
600
IF=IF(av)
160
500
140
IF=2 x IF(av)
IF=0.5 x IF(av)
120
IF=IF(av)
400
IF=0.5 x IF(av)
100
300
80
200
60
40
100
dIF/dt(A/µs)
20
0
dIF/dt(A/µs)
0
0
5
10
15
20
25
30
35
40
45
50
Fig. 7: Softness factor versus dIF/dt (typical
values).
S factor
0
5
10
15
20
25
30
35
40
45
50
Fig. 8: Relative variations of dynamic
parameters versus junction temperature.
1.25
2.0
S factor
1.8
1.00
1.6
1.4
IRM
0.75
1.2
QRR
1.0
0.50
0.8
0.6
0.25
0.4
0.2
dIF/dt(A/µs)
0.00
0.0
25
0
5
10
15
20
25
30
35
40
45
IF=IF(av)
VR=400V
Reference: Tj=125°C
Tj(°C)
IF=IF(av)
VR=400V
Tj=125°C
50
75
100
125
50
Fig. 9: Transient peak forward voltage versus
dIF/dt (90% confidence).
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
VFP(V)
200
25
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
180
IF=IF(av)
Tj=125°C
160
20
140
120
15
100
80
10
60
40
5
20
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
4/8
20
40
60
80
100
120
140
160
180
200
0
20
40
60
80
100
120
140
160
180
200
STTH1L06/U/A
Fig. 11: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 12-1: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm).
C(pF)
Rth(j-a)(°C/W)
100
110
F=1MHz
Vosc=30mV
Tj=25°C
100
90
DO-41
Lleads=10mm
80
70
60
10
SMB
50
40
30
20
VR(V)
10
1
1
10
100
1000
S(cm²)
0
0
1
2
3
4
5
6
7
8
9
10
Fig. 12-2: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm).
Rth(j-a)(°C/W)
140
130
SMA
120
110
100
90
80
70
60
50
40
30
20
S(cm²)
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
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STTH1L06/U/A
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
REF.
E1
D
E
A1
A2
C
L
b
FOOTPRINT
1.65
1.45
6/8
2.40
1.45
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
L
0.75
1.60
0.030
0.063
STTH1L06/U/A
PACKAGE MECHANICAL DATA
SMB
DIMENSIONS
REF.
E1
D
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
E
A1
A2
C
L
b
FOOTPRINT
2.3
1.52
2.75
1.52
7/8
STTH1L06/U/A
PACKAGE MECHANICAL DATA
DO-41
DIMENSIONS
C
A
■
■
O
/ B
REF.
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
D
0.712
O
/D
O
/D
■
C
1.102
0.863
0.028
0.034
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
STTH1L06
STTH1L06
DO-41
0.34 g
2000
Ammopack
STTH1L06RL
STTH1L06
DO-41
0.34 g
5000
Tape & reel
STTH1L06U
BL6
SMB
0.11 g
2500
Tape & reel
STTH1L06A
HL6
SMA
0.068 g
5000
Tape & reel
Epoxy meets UL 94,V0
Band indicated cathode
Bending method: Application note AN1471
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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