Product Group: Vishay Optoelectronics, Sensors / May 2013 Author: Joerg Wedermann Tel: +49 7131 67 3027 E-mail: [email protected] New VSMG10850 and VSMB10940 Infrared Emitters and VEMD10940F Silicon PIN Photodiode The News: Vishay Intertechnology Introduces New High-Speed 850 nm and 940 nm IR Emitters and Package-Matched High-Speed Silicone PIN Photodiode With Daylight Blocking Filter Vishay Intertechnology, Inc. (NYSE: VSH) broadens its optoelectronics portfolio with the introduction of two new high-speed 850 nm and 940 nm infrared emitters and a package-matched high-speed silicon PIN photodiode with high radiant sensitivity from 780 nm to 1050 nm. The VSMG10850, VSMB10940, and VEMD10940F each offer an ultra-wide ± 75° angle of half intensity in a compact side-view surface-mount package measuring 3 mm by 2 mm by 1 mm. Product Benefits: • • • • • • • Compact package measures 3 mm by 2 mm with a height of only 1 mm Ultra-wide ±75° angle of half intensity IR emitters • Peak wavelengths of 850 nm and 940 nm • Clear, untinted plastic packages • High radiant intensity of 1 mW/sr typical at 20 mA • Fast switching times of 15 ns • GaAIAs multi quantum well and double hetero technology • Low forward voltage down to 1.3 V typical Photodiode • High radiant sensitivity from 780 nm to 1050 nm • Features a daylight blocking filter matched with 830 nm to 950 nm IR emitters • Reverse light current of 3 µA • Low dark current of 1 nA • 920 nm wavelength of peak sensitivity • Low 0.1 %/K temperature coefficient of light current Floor life of 168 hours and moisture sensitivity level (MSL) of 3 in accordance with J-STD-020 Support lead (Pb)-free reflow soldering Conform to Vishay’s “Green” standards Product Group: Vishay Optoelectronics, Sensors / May 2013 The Key Specifications: Infrared emitters Part # Peak wavelength Technology Radiant intensity Switching times Forward voltage Photodiode Part # Radiant sensitivity Wavelength of peak sensitivity Dark current Reverse light current VSMG10850 850 nm GaAIAs double hetero 1 mW/sr typical 15 ns 1.4 V typical VSMB10940 940 nm GaAIAs multi quantum well 1 mW/sr typical 15 ns 1.3 V typical VEMD10940F 780 nm to 1050 nm 920 nm 1 nA 3 µA Market Applications: • IR touch panels for devices such as printer displays, eBook readers, smart phones, tablets, ultrabooks, and GPS units The Perspective: With their low profiles of 1 mm, the VSMG10850, VSMB10940, and VEMD10940F are optimized for use in IR touch panels in a wide range of devices. Offered in clear, untinted plastic packages, the 940 nm VSMB10940 and 850 nm VSMG10850 IR emitters provide high radiant intensity of 1 mW/sr typical at 20 mA – up to 33% higher than comparable devices on the market – and fast switching times of 15 ns. Offering high radiant sensitivity from 780 nm to 1050 nm, the VEMD10940F photodiode features a daylight blocking filter matched with 830 nm to 950 nm IR emitters, including the VSMG10850 and VSMB10940. Availability: Samples and production quantities of the new IR emitters and photodiode are available now, with lead times of six to eight weeks. To access the product datasheets on the Vishay Web site, go to http://www.vishay.com/doc?84170 (VSMB10940) http://www.vishay.com/doc?84171 (VEMD10940F) http://www.vishay.com/doc?84172 (VSMG10850) Contact Information: The Americas Mr. Dale Henderson [email protected] Europe Mr. Kai Rottenberger [email protected] Asia/Pacific Mr. Jason Soon [email protected]