STMICROELECTRONICS STTH2L06

STTH2L06
®
HIGH EFFICIENCY ULTRAFAST DIODE
Table 1: Main Product Characteristics
IF(AV)
2A
VRRM
600 V
Tj
175°C
VF (typ)
0.85 V
trr (typ)
60 ns
A
K
FEATURES AND BENEFITS
■
■
■
■
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
DO-41
STTH2L06
DESCRIPTION
The STTH2L06 is using ST Turbo 2 600V planar
Pt doping technology. It is specially suited for
SMPS and base drive transistor circuits.
Packaged in axial, SMA and SMB, this device is
intended for use in high frequency inverters, free
wheeling and polarity protection.
SMA
STTH2L06A
SMB
STTH2L06U
Table 2: Order Codes
Part Number
STTH2L06
STTH2L06RL
Marking
STTH2L06
STTH2L06
Part Number
STTH2L06A
STTH2L06U
Marking
L6A
L6U
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS)
RMS forward voltage
IF(AV)
Average forward current
δ = 0.5
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
DO-41
SMA
SMB
DO-41
SMA / SMB
Maximum operating junction temperature
September 2004
REV. 1
Tl = 90°C
Tl = 100°C
Tl = 115°C
tp = 10ms
sinusoidal
Value
600
Unit
V
7
A
2
2
2
45
35
-65 to + 175
A
°C
175
°C
A
1/8
STTH2L06
Table 4: Thermal Resistance
Symbol
Rth(j-l)
Parameter
Junction to lead
DO-41
Value (max).
Unit
35
°C/W
L = 5 mm
SMA
30
SMB
25
Table 5: Static Electrical Characteristics
Symbol
IR *
Parameter
Test conditions
Reverse leakage current Tj = 25°C
Min.
VR = VRRM
Tj = 150°C
VF **
Forward voltage drop
Tj = 25°C
12
IF = 2A
Max.
Unit
2
µA
85
1.3
Tj = 150°C
Pulse test:
Typ
0.85
V
1.05
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
2
To evaluate the conduction losses use the following equation: P = 0.89 x IF(AV) + 0.08 IF (RMS)
Table 6: Dynamic Characteristics
Symbol
Parameter
trr
Reverse recovery
time
Tj = 25°C
IF = 1A dIF/dt = 50 A/µs VR =30V
tfr
Forward recovery
time
Tj = 25°C
IF = 2A
dIF/dt = 100 A/µs
VFR = 1.1 x VFmax
VFP
Forward recovery
voltage
2/8
Test conditions
Min. Typ Max. Unit
60
85
ns
100
ns
9
V
STTH2L06
Figure 1: Conduction losses versus average
forward current
Figure 2: Forward voltage drop versus forward
current
IFM(A)
P(W)
2.5
δ = 0.1
δ = 0.2
10
δ = 0.5
9
δ = 0.05
Tj=150°C
(maximum values)
8
2.0
7
δ=1
6
1.5
Tj=150°C
(typical values)
5
1.0
4
Tj=25°C
(maximum values)
3
T
0.5
2
δ=tp/T
IF(AV)(A)
tp
0.0
1
VFM(V)
0
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
Figure 3: Relative variation of thermal
impedance junction to case versus pulse
duration (SMA - SCU = 1cm2)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
Figure 4: Relative variation of thermal
impedance junction to case versus pulse
duration (SMB - SCU = 1cm2)
Zth(j-a)/Rth(j-a)
Zth(j-a)/Rth(j-a)
1.0
1.0
0.9
0.9
0.8
0.8
0.7
0.7
0.6
0.6
0.5
0.5
0.4
0.4
0.3
0.3
0.2
0.1
0.2
Single pulse
Single pulse
0.1
tp(s)
0.0
tp(s)
0.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5: Relative variation of thermal
impedance junction to case versus pulse
duration (DO-41)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 6: Peak reverse recovery current versus
dIF/dt (typical values)
IRM(A)
Zth(j-a)/Rth(j-a)
15.0
1.0
VR=400V
Tj=125°C
0.9
IF=2 x IF(AV)
12.5
0.8
IF=IF(AV)
0.7
10.0
IF=0.5 x IF(AV)
0.6
7.5
0.5
0.4
5.0
0.3
0.2
0.1
2.5
Single pulse
tp(s)
dIF/dt(A/µs)
0.0
1.E-02
0.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0
50
100
150
200
250
300
350
400
450
500
3/8
STTH2L06
Figure 7: Reverse recovery time versus dIF/dt
(typical values)
Figure 8: Reverse recovery charges versus
dIF/dt (typical values)
trr(ns)
Qrr(nC)
800
500
VR=400V
Tj=125°C
VR=400V
Tj=125°C
450
700
400
IF=2 x IF(AV)
600
350
500
300
IF=IF(AV)
IF=2 x IF(AV)
250
400
IF=IF(AV)
200
IF=0.5 x IF(AV)
IF=0.5 x IF(AV)
300
150
200
100
100
50
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
100
150
200
250
300
350
400
450
0
500
Figure 9: Relative variations of dynamic
parameters versus junction temperature
100
200
300
400
500
Figure 10: Transient peak forward voltage
versus dIF/dt (typical values)
VFP(V)
25
1.4
IF=IF(AV)
VR=400V
Reference: Tj=125°C
1.2
IF=IF(AV)
Tj=125°C
20
1.0
15
0.8
QRR
0.6
10
trr
IRM
0.4
5
0.2
dIF/dt(A/µs)
Tj(°C)
0
0.0
25
50
75
100
0
125
Figure 11: Forward recovery time versus dIF/dt
(typical values)
50
100
150
200
250
Figure 12: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
tfr(ns)
400
100
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
350
F=1MHz
VOSC=30mVRMS
Tj=25°C
300
250
200
10
150
100
50
dIF/dt(A/µs)
VR(V)
0
1
0
4/8
50
100
150
200
250
1
10
100
1000
STTH2L06
Figure 13: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy FR4, eCU=35µm) (SMA / SMB)
Figure 14: Thermal resistance versus lead
lengh (DO-41)
Rth(°C/W)
Rth(j-a)(°C/W)
120
120
110
Rth(j-a)
100
100
90
SMA
80
80
SMB
70
60
60
Rth(j-l)
50
40
40
30
20
20
10
SCU(cm²)
Llead(mm)
0
0
0
1
2
3
4
5
5
10
15
20
25
Figure 15: SMA Package Mechanical Data
DIMENSIONS
E1
REF.
D
E
A1
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.70
0.075
0.106
A2
0.05
0.20
0.002
0.008
b
1.25
1.65
0.049
0.065
c
0.15
0.41
0.006
0.016
E
4.80
5.60
0.189
0.220
E1
3.95
4.60
0.156
0.181
D
2.25
2.95
0.089
0.116
L
0.75
1.60
0.030
0.063
A2
C
L
b
Figure 16: SMA Foot Print Dimensions
(in millimeters)
1.65
1.45
2.40
1.45
5/8
STTH2L06
Figure 17: SMB Package Mechanical Data
DIMENSIONS
REF.
E1
Millimeters
Inches
Min.
Max.
Min.
Max.
A1
1.90
2.45
0.075
0.096
A2
0.05
0.20
0.002
0.008
b
1.95
2.20
0.077
0.087
c
0.15
0.41
0.006
0.016
E
5.10
5.60
0.201
0.220
E1
4.05
4.60
0.159
0.181
D
3.30
3.95
0.130
0.156
L
0.75
1.60
0.030
0.063
D
E
A1
A2
C
L
b
Figure 18: SMB Foot Print Dimensions
(in millimeters)
2.3
1.52
6/8
2.75
1.52
STTH2L06
Figure 19: DO-41 Package Mechanical Data
DIMENSIONS
C
A
O
/D
C
REF.
/ B
O
O
/D
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.07
5.20
0.160
0.205
B
2.04
2.71
0.080
0.107
C
28
D
0.712
1.102
0.863
0.028
0.034
Table 7: Ordering Information
Part Number
STTH2L06
STTH2L06RL
STTH2L06A
STTH2L06U
Marking
STTH2L06
STTH2L06
L6A
L6U
Package
DO-41
DO-41
SMA
SMB
Weight
0.34 g
0.34 g
0.068 g
0.11 g
Base qty
2000
5000
5000
2500
Delivery mode
Ammopack
Tape & reel
Tape & reel
Tape & reel
Table 8: Revision History
Date
07-Sep-2004
Revision
1
Description of Changes
First issue
7/8
STTH2L06
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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