STTH3003CW ® HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) 2 x 15 A VRRM 300 V Tj (max) 175 °C VF (max) 1V trr (max) 40 ns A2 K A1 FEATURES AND BENEFITS TO-247 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY DESCRIPTION Dual center tap Fast Recovery Epitaxial Diodes suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in TO-247 this device is intended for secondary rectification. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 300 V IF(RMS) RMS forward current 30 A 15 30 A 140 A 7 A -65 +175 °C +175 °C IF(AV) Average forward current Tc = 135°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRSM Non repetitive peak reverse current tp = 20 µs square Tstg Storage temperature range Tj Maximum operating junction temperature October 1999 - Ed: 5A Per diode Per device 1/5 STTH3003CW THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Rth (c) Value Unit Per diode 2.0 °C/W Total 1.05 Coupling 0.1 STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Tests conditions Reverse leakage current VR = 300 V Forward voltage drop IF = 15 A Min. Typ. Tj = 25°C 40 Tj = 125°C Max. Unit 40 µA 400 1.25 Tj = 25°C Tj = 125°C V 0.85 1 Typ. Max. Unit 30 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.75 x IF(AV) + 0.017 IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests conditions IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM 2/5 Irr = 0.25 A IR = 1A Min. Tj = 25°C 40 dIF/dt = - 50 A/µs VR = 30V IF = 15 A dIF/dt = 100 A/µs VFR = 1.1 x VF max. Tj = 25°C Vcc = 200 V IF = 15 A dIF/dt = 200A/µs Tj = 125°C 300 ns 3.5 V 0.3 8.5 A STTH3003CW Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (maximum values, per diode). P1(W) 20 18 16 14 12 10 8 6 4 2 0 IFM(A) δ = 0.1 δ = 0.05 δ = 0.2 200 δ = 0.5 100 δ=1 Tj=125°C Tj=25°C 10 Tj=75°C T IF(av) (A) 0 2 4 6 8 10 δ=tp/T 12 14 VFM(V) tp 16 18 20 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 1 0.50 1.00 1.25 1.50 1.75 2.50 IRM(A) IF=2*IF(av) VR=200V Tj=125°C 14 IF=IF(av) 12 δ = 0.5 10 8 δ = 0.2 0.2 IF=0.5*IF(av) 6 δ = 0.1 T 4 Single pulse δ=tp/T tp(s) 0.0 1E-3 1E-2 1E-1 tp 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). 2 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 Fig. 6: Softness factor versus dIF/dt (typical values, per diode). trr(ns) S factor 100 0.60 VR=200V Tj=125°C 80 VR=200V Tj=125°C 0.50 0.40 60 IF=2*IF(av) IF=IF(av) 40 0.30 0.20 IF=0.5*IF(av) 20 dIF/dt(A/µs) 0 2.25 16 0.8 0.4 2.00 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). Zth(j-c)/Rth(j-c) 1.0 0.6 0.75 0 50 100 150 200 250 300 350 400 450 500 0.10 0.00 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH3003CW Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode). 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 8 VFP(V) 6 S factor 5 4 3 IRM 2 1 Tj(°C) 50 75 0 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) 500 450 400 350 300 250 200 150 100 50 0 4/5 VFR=1.1*VF max. IF=IF(av) Tj=125°C dIF/dt(A/µs) 0 IF=IF(av) Tj=125°C 7 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 STTH3003CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Inches Min. Typ. Max. Min. Typ. Max. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = E = Ordering code Marking Package STTH3003CW STTH3003CW TO-247 Cooling method: by conduction (C) Recommended torque value: 0.8 N.m. Maximum torque value: 1.0 N.m. Epoxy meets UL 94,V0 A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Weight 4.36g Base qty 30 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Delivery mode Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5