STTH302 ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 200 V Tj (max) 175 °C VF (max) 0.75 V trr (max) 35 ns FEATURES AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature ■ ■ ■ ■ DO-201AD STTH302 DESCRIPTION The STTH302 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF (AV) Average forward current TI = 107°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10ms Sinusoidal Tstg Storage temperature range Tj Value Unit 200 V 3 A 130 A - 65 to + 175 °C 175 °C Maximum operating junction temperature THERMAL PARAMETERS Symbol Rth (j-a) Parameter Junction-ambient* Value Unit 25 °C/W * On infinite heatsink with 10mm lead length. November 2001 - Ed: 1A 1/5 STTH302 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR * Reverse leakage current Test Conditions Tj = 25°C Min. VR = VRRM 4 Tj = 125°C VF ** Forward voltage drop Tj = 25°C Typ. Max. Unit 3 µA 75 0.95 IF = 3A Tj = 125°C V 0.66 0.75 Typ. Max. Unit 35 ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2 % To evaluate the maximum conduction losses use the following equations: P = 0.60 x IF(AV) + 0.05 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Test conditions Min. trr Reverse recovery IF = 1A dIF/dt = - 50A/µs time VR = 30V Tj = 25°C tfr Forward recovery IF = 3A dIF/dt = 50A/µs time VFR = 1.1 x VF max Forward recovery voltage Tj = 25°C 70 ns Tj = 25°C 1.6 V VFP 2/5 Parameter STTH302 Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) IF(av)(A) 3.0 δ = 0.05 δ = 0.1 δ = 0.2 3.5 δ = 0.5 Rth(j-a)=Rth(j-l) 2.5 3.0 2.5 δ=1 2.0 2.0 1.5 1.5 Rth(j-a)=75°C/W 1.0 1.0 T 0.5 0.5 IF(av)(A) δ=tp/T Tamb(°C) tp 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 Fig. 3: Thermal resistance versus lead length. 25 50 75 100 125 150 175 Fig. 4: Relative variation of thermal impedance junction ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm). Zth(j-a)/Rth(j-a) Rth(°C/W) 1.0 90 80 0.9 Rth(j-a) 0.8 70 0.7 60 0.6 50 δ = 0.5 0.5 40 0.4 Rth(j-l) 30 0.3 20 0.2 10 Lleads(mm) 0.1 0 5 10 15 20 25 Fig. 5: Forward voltage drop versus forward current. δ = 0.2 T δ = 0.1 tp(s) Single pulse 0.0 1.E-01 1.E+00 δ=tp/T 1.E+01 1.E+02 tp 1.E+03 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). IFM(A) C(pF) 100.0 100 F=1MHz Vosc=30mV Tj=25°C Tj=125°C (Maximum values) 10.0 Tj=125°C (Typical values) Tj=25°C (Maximum values) 1.0 VFM(V) VR(V) 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000 3/5 STTH302 Fig. 7: Reverse recovery time versus dIF/dt (90% confidence). Fig. 8: Peak reverse recovery current versus dIF/dt (90% confidence). trr(ns) IRM(A) 6 100 IF=3A VR=100V Tj=125°C 90 IF=3A VR=100V Tj=125°C 5 80 70 4 60 Tj=125°C Tj=125°C 3 50 40 Tj=25°C Tj=25°C 2 30 20 1 10 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 1 10 100 1000 Fig. 9: Relative variations of dynamic parameters versus junction temperature. IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C] 5.0 IF=3A dIF/dt=200A/µs VR=100V 4.5 4.0 Qrr 3.5 3.0 2.5 IRM 2.0 1.5 trr Tj(°C) 1.0 25 4/5 50 75 100 125 150 175 1 10 100 1000 STTH302 PACKAGE MECHANICAL DATA DO-201AD B A E note 1 B E ØD ØC note 1 ØD note 2 DIMENSIONS REF. Millimeters Min. Max. A ■ Min. 9.50 B ■ Inches 25.40 NOTES Max. 0.374 1 - The lead diameter ∅ D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) 1.000 ∅C 5.30 0.209 ∅D 1.30 0.051 E 1.25 0.049 Ordering code Marking Package Weight Base qty Delivery mode STTH302 STTH302 DO-201AD 1.16 g 600 Ammopack STTH302RL STTH302 DO-201AD 1.16 g 1900 Tape and reel White band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5