STTH60L06TV ® TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Table 1: Main Product Characteristics IF(AV) Up to 2 x 40 A A1 K1 VRRM 600 V A2 K2 Tj 150°C VF (typ) 1.0 V trr (max) 65 ns K1 A1 K2 FEATURES AND BENEFITS ■ ■ ■ ■ A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses ISOTOP STTH60L06TV1 DESCRIPTION The STTH60L06TV, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications (such as welding), as rectification diode. Table 2: Order Codes Part Number STTH60L06TV1 Marking STTH60L06TV1 Table 3: Absolute Ratings (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage IF(AV) Average forward current δ = 0.5 IFSM Surge non repetitive forward current Tstg Storage temperature range Tj Tc = 75°C Per diode Tc = 70°C Per diode tp = 10ms sinusoidal Maximum operating junction temperature September 2004 REV. 2 Value Unit 600 V 100 A 30 40 210 A A -55 to + 150 °C 150 °C 1/6 STTH60L06TV Table 4: Thermal Resistance Symbol Rth(j-c) Rth(c) Parameter Junction to case Value (max). Unit Per diode 1.60 °C/W Total 0.85 Coupling 0.1 °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static Electrical Characteristics (per diode) Symbol IR * Parameter Test conditions Reverse leakage current Tj = 25°C Min. VR = VRRM Tj = 125°C VF ** Forward voltage drop Tj = 25°C 25 IF = 30A Max. Unit 25 µA 250 1.55 Tj = 150°C Pulse test: Typ 1.0 V 1.25 * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% 2 To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 I F (RMS) Table 6: Dynamic Characteristics (per diode) Symbol Parameter trr Reverse recovery time Tj = 25°C IRM Reverse recovery current Tj = 125°C IF = 30A VR = 400V dIF/dt = 100 A/µs tfr Forward recovery time Tj = 25°C IF = 30A dIF/dt = 100 A/µs VFR = 1.1 x VFmax VFP Forward recovery voltage Tj = 25°C IF = 30A dIF/dt = 100 A/µs VFR = 1.1 x VFmax 2/6 Test conditions Min. Typ Max. Unit IF = 0.5A Irr = 0.25A IR =1A IF = 1A dIF/dt = 50 A/µs VR =30V 65 ns 65 90 11.5 16 A 500 ns 2.5 V STTH60L06TV Figure 1: Conduction losses versus average forward current (per diode) Figure 2: Forward voltage drop versus forward current (per diode) IFM(A) P(W) 100 80 δ = 0.1 70 δ = 0.2 δ = 0.5 90 Tj=150°C (maximum values) 80 δ = 0.05 60 70 δ=1 50 Tj=150°C (typical values) 60 50 40 Tj=25°C (maximum values) 40 30 30 T 20 20 10 δ=tp/T IF(AV)(A) 10 tp 0 VFM(V) 0 0 10 20 30 40 50 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Figure 4: Peak reverse recovery current versus dIF/dt (typical values, per diode) IRM(A) Zth(j-c)/Rth(j-c) 1.0 45 0.9 40 0.8 35 0.7 VR=400V Tj=125°C IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 30 0.6 25 0.5 20 0.4 15 0.3 T 10 0.2 5 0.1 δ=tp/T tp(s) Single pulse 0.0 1.E-03 1.E-02 1.E-01 dIF/dt(A/µs) tp 0 1.E+00 1.E+01 Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) 0 50 100 150 200 250 300 350 400 450 500 Figure 6: Reverse recovery charges versus dIF/dt (typical values, per diode) trr(ns) Qrr(nC) 3500 800 VR=400V Tj=125°C 700 VR=400V Tj=125°C 3000 IF=2 x IF(AV) 600 2500 IF=2 x IF(AV) 500 400 2000 IF=IF(AV) 1500 IF=0.5 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 300 1000 200 500 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 3/6 STTH60L06TV Figure 7: Reverse recovery softness factor versus dIF/dt (typical values, per diode) Figure 8: Relative variations of dynamic parameters versus junction temperature S factor 1.6 IF< 2 x IF(AV) VR=400V Tj=125°C 1.4 1.4 S factor 1.2 1.2 1.0 1.0 0.8 0.8 QRR 0.6 0.6 IF=IF(AV) VR=400V Reference: Tj=125°C trr IRM 0.4 0.4 0.2 0.2 Tj(°C) dIF/dt(A/µs) 0.0 0.0 0 50 100 150 200 250 300 350 400 450 500 Figure 9: Transient peak forward voltage versus dIF/dt (typical values, per diode) 25 50 75 100 125 Figure 10: Forward recovery time versus dIF/dt (typical values, per diode) tfr(ns) VFP(V) 450 10 IF=IF(AV) Tj=125°C 9 IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 400 8 350 7 300 6 250 5 200 4 150 3 100 2 50 1 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 4/6 10 100 1000 0 100 200 300 400 500 STTH60L06TV Figure 12: ISOTOP Package Mechanical Data REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S DIMENSIONS Millimeters Inches Min. Max. Min. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 typ. 0.976 typ. 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193 Table 7: Ordering Information Ordering type Marking Package STTH60L06TV1 STTH60L06TV1 ■ ■ ISOTOP Weight 27 g (without screws) Base qty 10 (with screws) Delivery mode Tube Epoxy meets UL94, V0 Cooling method: by conduction (C) Table 8: Revision History Date 07-Sep-2004 10-Sep-2004 Revision 1 2 Description of Changes First issue Average forward current (page 1) and Junction to case (page 2) values changed 5/6 STTH60L06TV Information furnished is believed to be accurate and reliable. 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