STV9379F VERTICAL DEFLECTION BOOSTER .. .. .. POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENT UP TO 2.0APP FLYBACK VOLTAGE UP TO 90V (on Pin 5) SUITABLE FOR DC COUPLING APPLICATION EXTERNAL FLYBACK SUPPLY DESCRIPTION Designed for monitors and high performance TVs, the STV9379F vertical deflection booster can handle flyback voltage up to 90V. Further to this, it is possible to have a flyback voltage which is more than the double of the supply (Pin 2). This allows to decrease the power consumption, or to decrease the flyback time for a given supply voltage. The STV9379F operates with supplies up to 42V and provides up to 2.0APP output current to drive the yoke. The STV9379F is offered in HEPTAWATT package. HEPTAWATT (Plastic Package) ORDER CODE : STV9379F PIN CONNECTIONS 7 6 5 4 3 2 1 Non-inverting Input Output Stage Supply Output GND or Negative Supply Flyback Supply Supply Voltage Inverting Input 9379F-01.EPS Tab connected to pin 4 August 1998 1/5 STV9379F BLOCK DIAGRAM OUTPUT SUPPLY STAGE VOLTAGE SUPPLY 2 INVERTING INPUT 1 NON-INVERTING INPUT 7 6 FLYBACK SUPPLY 3 POWER AMPLIFIER 5 OUTPUT THERMAL PROTECTION 9379F-02.EPS STV9379F 4 GROUND or NEGATIVE SUPPLY ABSOLUTE MAXIMUM RATINGS Parameter Value Unit VS Supply Voltage (Pin 2) (see note 1) 50 V V6 Flyback Peak Voltage (Pin 6) (see note 1) 100 V - 0.3, + VS V V1 , V7 Amplifier Input Voltage (Pins 1-7) (see note 1) IO Maximum Output Peak Current (see notes 2 and 3) 1.5 A I3 Maximum Sink Current (t < 1ms) 1.5 A I3 Maximum Source Current (t < 1ms) (in the diode, see Block Diagram) (see note 2) 1.5 A VESD ESD susceptibility : EIAJ Norm (200pF discharged through 0Ω) 300 V V3 - V2 Voltage Difference between Flyback Supply and Supply Voltage 50 V Toper Operating Ambient Temperature - 20, + 75 o Tstg Storage Temperature - 40, + 150 o +150 o Junction Temperature Tj Notes : 1. 2. 3. C C C 9379F-01.TBL Symbol Versus Pin 4. The output current can reach 4A peak for t ≤ 10µs (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). THERMAL DATA Parameter Rth (j-c) Junction-case Thermal Resistance Tt Temperature for Thermal Shutdown 2/5 Value Max. 3 Unit o C/W 150 o C ∆Tt Hysteresis on Tt 10 o Tjr Recommended Max. Junction Temperature 120 o C C 9379F-02.TBL Symbol STV9379F ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified) Parameter Test Conditions Min. Typ. Max. Unit VS Operating Supply Voltage Range Versus Pin 4 10 42 V V3M Operating Flyback Supply Voltage (V3M ≤ VS + 50V) Versus Pin 4 VS 90 V 13 20 mA 10 30 mA 1.0 A µA I2 Pin 2 Quiescent Current I3 = 0, I5 = 0 I6 Pin 6 Quiescent Current I3 = 0, I5 = 0 IO Max. Operating Peak Output Current I1 Amplifier Bias Current V1 = 22V, V7 = 23V - 0.15 -1 I7 Amplifier Bias Current V1 = 23V, V7 = 22V - 0.15 -1 µA 7 mV VIO ∆VIO/dt 5 Offset Voltage Offset Drift versus Temperature µV/oC - 10 GV Voltage Gain V5L Output Saturation Voltage to GND (Pin 4) 80 V5H dB I5 = 1.0A 1 1.5 V Output Saturation Voltage to Supply (Pin 6) I5 = - 1.0A 1.6 2.1 V VD5 - 6 Diode Forward Voltage between Pins 5-6 I5 = 1.0A 1.5 2.0 V VD3 - 6 Diode Forward Voltage between Pins 3-6 I3 = 1.0A V3-6 Voltage Drop between Pins 3-6 (2nd part of flyback) I3 = - 1.0A 1.6 2.0 V 2.6 3.0 V 9379F-03.TBL Symbol APPLICATION CIRCUITS AC COUPLING +VS Flyback Supply 2 6 3 R5 1 POWER AMPLIFIER 5 0.22m F 1.5W 7 THERMAL PROTECTION VREF STV9379F 4 R3 Rd (*) Ly Yoke R4 CL 9379F-03.EPS R2 R1 Ly Ly < Rd < (*) 50m s 20m s 3/5 STV9379F APPLICATION CIRCUITS (continued) DC COUPLING +VS Flyback Supply 2 6 3 R5 1 Vertical Position Adjustment POWER AMPLIFIER 5 7 0.22m F 1.5W VREF+ THERMAL PROTECTION STV9379F 4 Rd (*) Ly Yoke -VEE 9379F-04.EPS R2 R1 Ly Ly < Rd < (*) 50m s 20m s Figure 1 : Output Transistors SOA (for secondary breakdown) 10 Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current) ISB (%) I C (A) 100 @ T case = 25˚C 90 1 80 t = 1ms t = 10ms t = 100ms V CE (V) 10 -2 1 4/5 10 10 2 T case (˚C) 60 25 50 75 100 125 9379F-06.EPS 70 9379F-05.EPS 10 -1 STV9379F PM-HEPTV.EPS PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWATT Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia. Millimeters Typ. 2.4 1.2 0.35 0.6 2.41 4.91 7.49 2.54 5.08 7.62 10.05 Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4 Min. 0.094 0.047 0.014 0.024 0.095 0.193 0.295 Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409 0.668 0.587 0.848 0.891 3 15.8 6.6 0.102 0.594 0.236 2.8 5.08 3.65 0.100 0.200 0.300 0.396 16.97 14.92 21.54 22.62 2.6 15.1 6 Inches Typ. 0.118 0.622 0.260 0.110 0.200 3.85 0.144 HEPTV.TBL Dimensions 0.152 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - All Rights Reserved 2 Purchase of I C Components of STMicroelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5