STW10NC60 STH10NC60FI N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218 PowerMesh™II MOSFET TYPE STW10NC60 STH10NC60FI ■ ■ ■ ■ ■ VDSS RDS(on) ID 600 V 600 V < 0.75 Ω < 0.75 Ω 10 A 10 A (*) TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. 3 2 3 1 2 1 TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ■ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW10NC60 VDS VDGR VGS ID ID IDM (1) PTOT 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V Drain Current (continuous) at TC = 25°C 10 10 (*) A Drain Current (continuous) at TC = 100°C 6.3 6.3 (*) A Drain Current (pulsed) 40 40 (*) A Total Dissipation at TC = 25°C 160 60 W Derating Factor 1.28 0.48 W/°C Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area . February 2002 STH10NC60FI Drain-source Voltage (VGS = 0) dv/dt Tj Unit 3.5 - V/ns 2500 – 55 to 150 V °C (1)ISD ≤10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by Maximum Temperature Allowed 1/9 STW10NC60 / STH10NC60FI THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl TO-247 ISOWATT218 0.78 2.08 Maximum Lead Temperature For Soldering Purpose °C/W 30 °C/W 300 °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 10 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 820 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 600 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 nA V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4.5 A Min. Typ. Max. Unit 2 3 4 V 0.6 0.75 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS =20 V , ID = 4.5A VDS = 25V, f = 1 MHz, VGS = 0 Min. 9 S 1420 pF 205 pF 35 pF STW10NC60 / STH10NC60FI ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 300V, ID = 4.5 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 9.0 A, VGS = 10V Typ. Max. Unit 20 ns 16 ns 55 77 nC 4.5 nC 31 nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID = 4.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 64 32 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID = 9.0 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 19 13 32 ns ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 9 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 9 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 10 A 40 A 1.6 V 600 ns 4.7 µC 15.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/9 STW10NC60 / STH10NC60FI Thermal Impedance for TO-247 Output Characteristics Transconductance 4/9 Thermal Impedance for ISOWATT218 Transfer Characteristics Static Drain-source On Resistance STW10NC60 / STH10NC60FI Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STW10NC60 / STH10NC60FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STW10NC60 / STH10NC60FI TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. 0.19 TYP. MAX. A 4.85 5.15 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 7/9 STW10NC60 / STH10NC60FI ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 3.7 0.138 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 8/9 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A STW10NC60 / STH10NC60FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9