STW14NC50 N-CHANNEL 500V - 0.31Ω - 14A TO-247 PowerMesh™II MOSFET TYPE STW14NC50 ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.38Ω 14 A TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 500 V Drain-gate Voltage (RGS = 20 kΩ) 500 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 14 A ID Drain Current (continuos) at TC = 100°C 8.7 A VDS VDGR VGS IDM (●) PTOT dv/dt(1) Tstg Tj Parameter Drain Current (pulsed) 56 A Total Dissipation at TC = 25°C 190 W Derating Factor 1.5 W/°C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area May 2001 3.5 V/ns –65 to 150 °C 150 °C (1)ISD ≤14A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ T JMAX. 1/8 STW14NC50 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl 0.66 °C/W Thermal Resistance Junction-ambient Max 30 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 14 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 800 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 Min. Typ. Max. 500 Unit V VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 50 µA ±100 nA VGS = ±30V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 7A Min. Typ. Max. Unit 2 3 4 V 0.31 0.38 Ω Typ. Max. Unit DYNAMIC Symbol 2/8 Parameter gfs Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID =7A VDS = 25V, f = 1 MHz, VGS = 0 Min. 13 S Ciss Input Capacitance 2000 pF Coss Output Capacitance 300 pF Crss Reverse Transfer Capacitance 43 pF STW14NC50 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 250V, ID = 7 A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 14 A, VGS = 10V, RG = 4.7Ω Typ. Max. Unit 20 ns 23 ns 75 90 nC 10 nC 38 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 400V, ID = 14 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. 25 Unit ns 30 ns 62 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 14 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 14 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Max. Unit 14 A 56 A 1.6 V 670 ns 6.7 µC 20 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STW14NC50 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STW14NC50 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW14NC50 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW14NC50 TO-247 MECHANICAL DATA DIM. mm. MIN. MAX. MIN. A 4.85 5.15 0.19 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 TYP. MAX. 0.20 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 7/8 TYP inch 3.55 3.65 0.14 0.143 STW14NC50 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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