STW3100 TRANSCEIVER MODULE REV. 1.0 - PRODUCT PREVIEW 1 ■ ■ ■ ■ FEATURES Triple-band (EGSM900 / DCS1800 / PCS1900). Supports data transfer applications in multislots GPRS class-12 EDGE Receive capability Integrates: – BiCMOS6G RF transceiver – 3 Receive Band Pass filters LFBGA104 (7x7x1.4mm) ORDERING NUMBER: STW3100 – 3 Receive Matching Network between filters output & LNA input – PLL loop filter – Decoupling / DC blocking capacitors ■ Insures compatibility with different Power Modules – STW3102 Power Module – Power Module coming from the competition ■ RF interfaces: – Single-ended 50 ohms acceses – ± 2 kV Human Body Model ■ Control interfaces: – Towards Baseband: 3-wire serial interface with a Clock (Clk), enable (En) and a data line (Data). – Towards Front-End functions 3 control pins – 3 in Rx – 2 in Tx ■ Noise Figure in – Low band : 5.5 dB typ – Hign bands : 6 dB typ ■ Transmit output level: – EGSM band : 1 or 5 dBm typ – DCS & PCS bands : 1 or 5 dBm typ ■ ■ ■ ■ Standard Rx / Tx differential I/Q analogue interface Supply voltage range: 2.7V min / 3.3V max Embedded voltage regulators to supply on chip RF functions Package: – Full lead-free 2 DESCRIPTION In a 1.4 x 7 x 7mm low-profile Ball Grid Array package, the new modules integrate all of the key functions, requiring only a 26MHz crystal and a power amplifier module (PA+antenna switch functions) to build a complete triple-band solution from antenna to base band interface. Two versions are offered: type STw3100 addresses the European EGSM900, DCS1800, and PCS1900 bands while the STw3101 targets the US GSM850, DCS1800, and PCS1900 bands. The transceiver modules are compatible with the STMicroelectronics STw3102 power-amplifier module and most of the standard power amplifiers available on the market. – 104 -BGA 7 x 7 pack ■ Temperature range: – Case operating temperature range: -20°/ +70°C (fulfil specification) ■ ESD handling: February 2004 This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. 1/7 STW3100 3 ELECTRICAL CHARACTERISTICS 3.1 DC SECTION Limiting value Symbol Parameter Test Condition Min. Typ. Max. Unit 3.6 V Absolute Maximum Ratings VCC Maximum voltage supply Tstg Storage Temperature Pdiss Maximum Power dissipation -55 25 125 °C 500 mW 85 °C 3.3 V 70 °C 3.3 V Max. Unit Operating Functionality range Top Operating Temperature -40 VCC Supply voltage on Vcc_SYN and Vcc_RX/TX pins 2.7 25 Operating Specified range Top Operating Temperature -20 VCC Supply voltage on Vcc_SYN and Vcc_RX/TX pins 2.7 25 DC characteristics VCC = 2.7V; Symbol Parameter Test Condition Min. Typ. Pin Vcc_syn Icc Supply current in power off mode 10 µA Icc Supply current in REF mode 3 mA Icc Supply in Syn mode 35 mA Pin Vcc_RX/TX Icc Supply current in power off mode 10 µA Icc Supply current in RX mode 35 mA Icc Supply current in TX mode GSM bands 88 mA Icc Supply current in TX mode DCS or PCS bands 88 mA 2 V 2 V 1.8 V Pin Vccreg_RFVCO Vccreg Internal regulated supply voltage Pin Vccreg_TXVCO Vccreg Internal regulated supply voltage Pin Vccreg_Digital Vccreg 2/7 Internal regulated supply voltage STW3100 3.2 Receive Section Vcc = 2.7V; Symbol Max. Unit EGSM900 925 960 MHz fRX3 GSM1800 1805 1880 fRX4 GSM1900 1930 1990 fRX2 Zin Parameter Input Frequency Input impedance Test Condition Min. Single-Ended Typ. Ω 50 VSWR_in Input VSWR into 50 ohm 1.8 2.3 Ripple Gain Flatness over the Frf band 1 2 dB Gmax Total max gain dB ∆G in 2Vpp Mode 74 79 in 4Vpp Mode 80 85 Gain range 66 AGC gain step - AGC linearity NF ICP-1dB Noise figure DSB 3 -1 dB +1 Low Band 5.5 High Band 6 dB dB 1dB Input Compression Point @ Low gain, 0kHz offset Low Band -23 -20 High Band -26 -23 Third Order Input Intercept Point @ High Front-end gain Low Band -14 -10 High Band -14 -12 IIP2 2nd Order Input Intercept Point High Front-end gain +44 dBm C/N Out-of-band Blocking (a, b, c, d) Pwanted= -100 dBm, in Low-Band & (a , d) in High- Pinterf= -1 dBm Band (1 dB Insertion Losses for antenna switch) 9 dB C/N Out-of-band Blocking (c, b) in High-Band Pwanted= -100 dBm, Pinterf= -13 dBm 9 dB C/N In-Band Blocking @ |F-Fo|> 3 MHz Pwanted= -100 dBm, Pinterf= -24 dBm (LB) Pinterf= -27 dBm (HB) 9 dB C/N In-Band Blocking @ 1.6 MHz < |F-Fo| < 3 MHz Pwanted= -100 dBm, Pinterf= -34 dBm 9 dB C/N In-Band Blocking @ 600 kHz < |F-Fo| < 1.6 MHz Pwanted= -100 dBm, Pinterf= -44 dBm 9 dB IIP3 BW_GMSK 3 dB Channel bandwidth BW_EDGE after calibration 90 110 Channel response attenuation @ 200 kHz @ 400 kHz @ 600 kHz 15 50 58 18 51 62 Att EDGE Mode Channel response attenuation @ 200 kHz @ 400 kHz @ 600 kHz 4 45 52 7 48 55 Tdelay Group delay variation Spurious emission @ RF input @ 9 kHz −1 GHz @ 1 GHz − 12 75 GHz dBm 110 140 Att GMSK Mode Spurs dBm kHz dB dB Between 0 & 67.7 kHz 1.8 2.5 us dBm -57 -47 3/7 STW3100 3.2 Receive Section (continued) Vcc = 2.7V; Symbol Parameter Test Condition Min. ∆GIQ I & Q Gain mismatch ∆Φ IQ I & Q quadrature mismatch -5 VCm Output Common mode voltage 1.2 VSwing Maximum single ended Output Voltage 4Vpp mode 2Vpp mode 0.75 0.375 Voffset Differential Output OffsetVoltage after calibration -150 Toffset Offset voltage calibration settling time (during the locking time phase) Typ. -1 1.35 Max. Unit +1 dB +5 deg 1.5 V Vpk ±20 +150 mV 200 us 3.3 Transmit Section Vcc = 2.7V; Symbol Parameter Test Condition Min. Typ. Max. Unit 1 - - MHz 0.8 1 1.4 V 0.8 1 1.2 Vpp 10 mV - kΩ 20 pF Pins ITX(+), ITX(-), QTX(+) and QTX(-) Fmod Modulation frequency range VDC mod Input Common mode voltage Vmod VDC offset Modulation level 3dB low pass cut-off frequency Single ended; peak to peak value Input DC offset permissible Differential RIN Dynamic input resistance Single ended 10 - CIN Dynamic input capacitance Single ended - - differential 56 RF Tx performances fTX2 Output frequency fTX3 fTX4 Zout VSWR_out Output impedance EGSM900 880 915 GSM1800 1710 1785 GSM1900 1850 Single-Ended Output VSWR into 50 ohm POUTGMSK Output power into 50 ohm load 1910 Ω 50 1.5 Set to Pout _0 2 +1 dBm Set to Pout _1 +5 ACPR400 ACPR @ 400 kHz offset (BW = 30 kHz) Low Band -65 High Band -63 -61 N20MHz Output Phase Noise @ 20 MHz offset Low Band -164 -159 High Band -156 -152 RMS RMS phase error H2LB 2nd H3LB 3rd IMout Unwanted sideband suppression Carrier rejection Crej 4/7 MHz 1.2 -62 dBc/ BW dBc/ Hz 2.5 deg Harmonic level -20 dBc Harmonic level -20 dBc -45 -35 dBc -40 -32 dBc STW3100 3.4 Frequency generation Section Vcc = 2.7V; Symbol Parameter Test Condition Min. Typ. Max. Unit RF synthesizer Tlock_time Fchannnel Fstep Settling Time φpeak < 20° 200 us EGSM900 Frequency Range 880.2 150 959.8 MHz DCS1800 Frequency Range 1710.2 1879.8 MHz DCS1900 Frequency Range 1850.2 1989.8 MHz Channel spacing Synthesizer frequency step (Fract-N PLL) 200 kHz 0.0022 ppm 26 MHz DCXO Fref Reference Frequency (quartz input) Frange crystal Capacitor bank frequency range Fstep crystal Capacitor bank step -30 - 1 +30 ppm - ppm 5/7 STW3100 mm inch DIM. MIN. TYP. MAX. MIN. A 1.21 0.048 A1 0.15 0.006 A2 1.02 TYP. MAX. 0.040 b 0.25 0.30 0.35 0.010 0.012 0.014 D 6.85 7.00 7.15 0.270 0.275 0.281 D1 E 5.50 6.85 7.00 OUTLINE AND MECHANICAL DATA 0.216 7.15 0.270 0.275 E1 5.50 0.216 e 0.50 0.020 F 0.75 0.029 0.281 Body: 7 x 7 x 1.4mm ddd 0.08 0.003 eee 0.15 0.006 fff 0.05 0.002 LFBGA104 Low Fine Ball Grid Array 7578709 A 6/7 STW3100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com 7/7