STMICROELECTRONICS STW8NC70Z

STW8NC70Z
N-CHANNEL 700V - 1.1 Ω - 7A TO-247
Zener-Protected PowerMESH™III MOSFET
TYPE
STW8NC70Z
■
■
■
■
■
VDSS
RDS(on)
ID
700 V
< 1.38 Ω
7A
TYPICAL RDS(on) = 1.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
TO-247
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
ID
IDM (● )
PTOT
IGS
VESD(G-S)
dv/dt (1)
Tstg
Tj
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
700
V
Drain-gate Voltage (RGS = 20 kΩ)
700
V
Gate- source Voltage
±25
V
Drain Current (continuos) at TC = 25°C
7
A
Drain Current (continuos) at TC = 100°C
4.4
A
Drain Current (pulsed)
28
A
Total Dissipation at TC = 25°C
160
W
Derating Factor
1.28
W/°C
Gate-source Current (*)
±50
mA
Gate source ESD(HBM-C=100pF, R=15KΩ)
3
KV
Peak Diode Recovery voltage slope
3
V/ns
–65 to 150
°C
150
°C
Storage Temperature
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX.
(*)Limited only by maximum temperature allowed
May 2001
1/8
STW8NC70Z
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
Rthc-sink
Tl
0.78
°C/W
30
°C/W
Thermal Resistance Case-sink Typ
0.1
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
7
A
250
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
∆BVDSS/∆TJ
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
Breakdown Voltage Temp.
Coefficient
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
Max.
700
Unit
V
1
V/°C
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
50
µA
VGS = ±20V
±10
µA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V, ID = 3.5 A
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
Typ.
Max.
Unit
3
4
5
V
1.1
1.38
Ω
7
A
DYNAMIC
Symbol
gfs (1)
2/8
Parameter
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =3.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
Max.
Unit
7
S
1840
pF
140
pF
18
pF
STW8NC70Z
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON (RESISTIVE LOAD)
Symbol
td(on)
tr
Qg
Parameter
Turn-on Delay Time
Rise Time
Test Conditions
Min.
VDD = 350V, ID = 3.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 560V, ID = 7 A,
VGS = 10V
Max.
Unit
24
ns
8
ns
47
Total Gate Charge
Qgs
Typ.
66
nC
11
nC
19
nC
SWITCHING OFF (INDUCTIVE LOAD)
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 560V, ID = 7 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
11
ns
10
ns
19
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Typ.
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 7 A, VGS = 0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ISD = 7 A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
Max.
Unit
7
A
28
A
1.6
V
575
ns
5.8
µC
20
A
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
αT
Voltage Thermal Coefficient
T=25°C Note(3)
1.3
10-4/°C
Rz
Dynamic Resistance
IGS = 50 mA
90
Ω
BVGSO
25
V
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆VBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/8
STW8NC70Z
Safe Operating Area
Output Characteristics
Transconductance
4/8
Thermal Impedance
Transfer Characteristics
Static Drain-source On Resistance
STW8NC70Z
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STW8NC70Z
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STW8NC70Z
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
H
10.9
15.3
0.429
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
7/8
STW8NC70Z
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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