STW8NC80Z N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC80Z n n n n n VDSS RDS(on) ID 800 V < 1.5 Ω 6.7 A TYPICAL RDS(on) = 1.3 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS n SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION n WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (● ) PTOT IGS VESD(G-S) dv/dt (1) Tstg Tj Value Unit Drain-source Voltage (VGS = 0) Parameter 800 V Drain-gate Voltage (RGS = 20 kΩ) 800 V Gate- source Voltage ±25 V Drain Current (continuos) at TC = 25°C 6.7 A Drain Current (continuos) at TC = 100°C 4.2 A Drain Current (pulsed) 27 A Total Dissipation at TC = 25°C 160 W Derating Factor 1.28 W/°C Gate-source Current ±50 mA Gate source ESD(HBM-C=100pF, R=15KΩ) 3 KV Peak Diode Recovery voltage slope 3 V/ns –65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD ≤6.7A, di/dt ≤100A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. December 2001 1/8 STW8NC80Z THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Tl 0.78 °C/W 30 °C/W 300 °C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 6.7 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 275 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient Test Conditions ID = 250 µA, VGS = 0 Min. Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Max. 800 ID = 1 mA, VGS = 0 IDSS Typ. Unit V 0.9 V/°C 1 µA VDS = Max Rating, TC = 125 °C 50 µA VGS = ±20V ±10 µA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 3.3 A Min. Typ. Max. Unit 3 4 5 V 1.3 1.5 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Ciss Input Capacitance Coss Crss Test Conditions VDS > ID(on) x RDS(on)max, ID =3.3 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 6 S 2350 pF Output Capacitance 164 pF Reverse Transfer Capacitance 17 pF STW8NC80Z ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON (RESISTIVE LOAD) Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. Typ. Max. Unit VDD = 400V, ID = 3A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 33 ns 12 ns VDD = 640V, ID = 6 A, VGS = 10V 43 58 nC 12 nC 15 nC SWITCHING OFF (INDUCTIVE LOAD) Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 640V, ID = 6 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 13 ns 13 ns 20 ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) Parameter Test Conditions Max. Unit Source-drain Current 6.7 A Source-drain Current (pulsed) 24 A Forward On Voltage ISD = 6 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 6 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current Min. Typ. 1.6 V 680 ns 6 µC 18 A GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. 25 Max. Unit Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) αT Voltage Thermal Coefficient T=25°C Note(3) 1.3 10-4/°C Rz Dynamic Resistance ID = 20 mA, VGS = 0 90 Ω BVGSO V Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. ∆VBV = αT (25°-T) BVGSO(25°) PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW8NC80Z Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance STW8NC80Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW8NC80Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW8NC80Z TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G H 10.9 15.3 0.429 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/8 STW8NC80Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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