STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z ■ ■ ■ ■ ■ ■ ■ VDSS RDS(on) 700 700 700 700 700 < 1.2 < 1.2 < 1.2 < 1.2 < 1.2 V V V V V Ω Ω Ω Ω Ω ID Pw 7.5 A 7.5 A 7.5 A 7.5 A 7.5 A 115 W 35 W 115 W 115 W 156 W TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. 3 1 3 2 TO-220 1 2 TO-220FP TO-247 3 I2PAK 1 3 12 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP9NK70Z P9NK70Z TO-220 TUBE STP9NK70ZFP P9NK70ZFP TO-220FP TUBE STB9NK70Z B9NK70Z D2PAK TUBE (ONLY UNDER REQUEST) STB9NK70ZT4 B9NK70Z D2PAK TAPE & REEL STB9NK70Z-1 B9NK70Z-1 I2PAK TUBE STW9NK60Z W9NK70Z TO-247 TUBE April 2002 1/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-220 / D2PAK / I 2PAK VDS VDGR VGS Unit TO-220FP TO-247 Drain-source Voltage (VGS = 0) 700 V Drain-gate Voltage (RGS = 20 kΩ) 700 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 7.5 7.5 (*) 7.5 A ID Drain Current (continuous) at TC = 100°C 4.7 4.7 (*) 4.7 A Drain Current (pulsed) 30 30 (*) 30 A IDM (l) PTOT VESD(G-S) dv/dt (1) Total Dissipation at TC = 25°C 115 35 156 W Derating Factor 0.92 0.28 1.25 W/°C Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V 4.5 V/ns Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature - 2500 V °C °C -55 to 150 -55 to 150 (l) Pulse width limited by safe operating area (1) I SD ≤7.5A, di/dt ≤200 µ A, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 I2PAK Rthj-case Thermal Resistance Junction-case Max Rthj-pcb Thermal Resistance Junction-pcb Max Rthj-amb Tl D2PAK TO-220FP TO-247 3.6 0.8 1.09 30 (When mounted on minimum Footprint) Thermal Resistance Junction-ambient Max °C/W 62.5 30 300 Maximum Lead Temperature For Soldering Purpose °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 7.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 230 mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100µA 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4 A 1.0 1.2 Ω Typ. Max. Unit V(BR)DSS 700 Unit 3 V DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions Min. VDS = 15 V, ID = 4 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 560 V 5.3 S 1370 143 32 pF pF pF 90 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 350 V, ID = 4 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 22 17 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 560V, ID = 8 A, VGS = 10V 48 10 27 68 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 350 V, ID = 4 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 3) 45 13 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 350 V, ID = 8 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 11 7 19 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 7.5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 8 A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. 570 5.2 19.5 Max. Unit 7.5 30 A A 1.6 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z Safe Operating Area For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP Thermal Impedance For TO-220FP Safe Operating Area For TO-247 Thermal Impedance For TO-247 4/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 5/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized BVDSS vs Temperature Maximum Avalanche Energy vs Temperature 6/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 8/14 L4 P011C STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 L2 0.409 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 L2 L5 1 2 3 L4 9/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 10/14 1 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 E 10 10.4 0.393 0.409 L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 E e B B2 C2 A1 A C A L1 L2 D L P011P5/E 11/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 12/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA MAX. inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.075 0.082 0.933 0.956 * on sales type 13/14 STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 14/14