STX817 ® PNP MEDIUM POWER TRANSISTOR ■ Type Marking STX817 X817 DEVICE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY APPLICATIONS VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH ■ TO-92 DECRIPTION The STX817 is a PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -120 V V CEO Collector-Emitter Voltage (I B = 0) -80 V V EBO Emitter-Base Voltage (I C = 0) -5 V -1.5 A -2 A Base Current -0.3 A Base Peak Current (t p < 5 ms) -0.6 A IC I CM IB I BM P tot T stg Tj April 2002 Collector Current Collector Peak Current (t p < 5 ms) o Total Dissipation at T amb = 25 C Storage Temperature Max. Operating Junction Temperature 0.9 W -65 to 150 o C 150 o C 1/4 STX817 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 44.6 139 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = -120 V I CEO Collector Cut-off Current (I B = 0) V CE = -80 V I EBO Emitter Cut-off Current (I C = 0) V EB = -5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = -10 mA Min. Typ. Max. Unit -500 µA -1 mA -100 µA -80 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = -100 mA I C = -1 A I B = -10 mA I B = -100 mA -0.25 -0.5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = -100 mA I C = -1 A I B = -10 mA I B = -100 mA -1 -1.1 V V DC Current Gain I C = -100 mA I C = -500 mA I C = -1 A V CE = -2 V V CE = -2 V V CE = -2 V Transition Frequency I C = -0.1 A V CE = -10 V h FE ∗ fT ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 140 80 40 50 MHz STX817 TO-92 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.32 4.95 0.170 0.195 b 0.36 0.51 0.014 0.020 D 4.45 4.95 0.175 0.194 E 3.30 3.94 0.130 0.155 e 2.41 2.67 0.095 0.105 e1 1.14 1.40 0.045 0.055 L 12.70 15.49 0.500 0.609 R 2.16 2.41 0.085 0.094 S1 1.14 1.52 0.045 0.059 W 0.41 0.56 0.016 0.022 V 4 degree 6 degree 4 degree 6 degree 3/4 STX817 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4