STY25NA60 N - CHANNEL 600V - 0.225Ω - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET TYPE STY25NA60 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 600 V < 0.24 Ω 25 A TYPICAL RDS(on) = 0.225 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION The Max247 package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264.The increased die capacity makes the device idealto reduce component count in multiple paralleled designs and save board space with respect to larger packages. 1 2 3 Max247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS Value Un it Drain-source Voltage (VGS = 0) Parameter 600 V Drain- gate Voltage (RGS = 20 kΩ) 600 V ± 30 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 25 A ID Drain Current (continuous) at Tc = 100 o C 16.5 A Drain Current (pulsed) 100 A I DM (•) P tot T s tg Tj o T otal Dissipation at Tc = 25 C 300 W Derating F actor 2.4 W /o C Storage Temperature Max. O perating Junction Temperature -55 to 150 o C 150 o C (•) Pulse width limited by safe operating area March 1999 1/8 STY25NA60 THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max Typ o 0.42 40 0.05 C/W C/W o C/W o AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e Unit 25 A 3000 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) T yp. Max. 600 V GS = 0 I DSS Min. Unit V T c = 125 oC V GS = ± 30 V 50 500 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10 V Resistance I D(o n) V DS = V GS Min. T yp. Max. Unit 3 4 5 V 0.225 0.24 Ω I D = 12.5 A 25 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x ID = 12.5 A Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. T yp. 20 Max. Unit S 6200 690 195 pF pF pF STY25NA60 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions t d(on) tr Turn-on delay Time Rise Time V DD = 300 V I D = 12.5 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 3) Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V ID = 25 A V GS = 10 V Min. T yp. Max. 45 70 Unit ns ns 240 25 115 315 nC nC nC T yp. Max. Unit SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. 70 25 105 V DD = 480 V I D = 25 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbo l ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Con ditions Min. T yp. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 25 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100 A/µs I SD = 25 A T j = 150 o C V DD = 100 V (see test circuit, figure 5) V GS = 0 Max. Unit 25 100 A A 2 V 840 ns 19.5 µC 46.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STY25NA60 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STY25NA60 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STY25NA60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STY25NA60 Max247 MECHANICAL DATA mm DIM. MIN. A 4.70 TYP. inch MAX. MIN. TYP. MAX. 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 P025Q 7/8 STY25NA60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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