STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH™Power MOSFET TYPE STY60NK30Z ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 2 3 1 Max247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH EFFICIENCY SWITCHING DC/DC CONVETERS FOR PLASMA TV’s ■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STY60NK30Z Y60NK30Z Max247 TUBE February 2004 1/8 STY60NK30Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 300 V Drain-gate Voltage (RGS = 20 kΩ) 300 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 37.5 A Drain Current (pulsed) 240 A IDM () PTOT VESD(G-S) dv/dt (1) Tj Tstg Total Dissipation at TC = 25°C 450 W Derating Factor 3.57 W/°C Gate source ESD(HBM-C=100 pF, R=1.5 KΩ) 6000 V 4.5 V/ns -55 to 150 °C 0.28 °C/W Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature ( ) Pulse width limited by safe operating area (1) ISD ≤60A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 30 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 60 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 0.7 J GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8 STY60NK30Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter Test Conditions Min. Typ. Max. Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 30 A V(BR)DSS 300 Unit 3 V 3.75 4.5 V 0.033 0.045 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Test Conditions Min. VDS = 15 V, ID = 30 A VDS = 25V, f = 1 MHz, VGS = 0 VGS = 0V, VDS = 0V to 240V 29 S 7200 1070 250 pF pF pF 880 pF SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 150 V, ID = 30 A RG = 4.7Ω , VGS = 10 V (Resistive Load see, Figure 3) 50 90 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 240 V, ID = 60 A, VGS = 10 V 220 46 123 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 150 V, ID = 30 A RG = 4.7Ω , VGS = 10 V (Resistive Load see, Figure 3) 150 60 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 240 V, ID = 60 A, RG = 4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 40 65 110 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 60 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A, di/dt = 100 A/µs VR = 100 V, Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Min. Typ. 475 6.4 27 Max. Unit 60 240 A A 1.6 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/8 STY60NK30Z Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transconductance 4/8 Static Drain-source On Resistance STY60NK30Z Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STY60NK30Z Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STY60NK30Z Max247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 MIN. TYP. MAX. P025Q 7/8 STY60NK30Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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