T405Q-600B-TR & T405Q-600H ® Sensitive 4Q 4A TRIAC A2 MAIN FEATURES Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 V IGT 5 mA G A1 A2 A2 DESCRIPTION The T405Q-600B-TR and the T405Q-600H 4 quadrants sensitive TRIACs are intended in general purpose applications where high surge current capability is required, such as irrigation systems. These TRIACs feature a gate current capability sensitivities of 5mA. A2 G G A2 A1 A1 IPAK (T4-H) DPAK (T4-B) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM 2 I t Parameter Value Unit Tc= 110°C 4 A F = 50Hz t = 20ms 35 A F = 60Hz t = 16.7ms 38 RMS on-state current (Full sine wave) DPAK / IPAK Non repetitive surge peak on-state current (Full cycle, Tj initial = 25°C ) 2 I t Value for fusing tp = 10 ms 6 A2s dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100ns Repetitive F = 100 Hz 50 A/µs IGM Peak gate current tp = 20µs Tj = 125°C 4 A Tj = 125°C 0.5 W - 40 to + 150 - 40 to + 125 °C PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range July 2002 - Ed: 1A 1/7 T405Q-600B-TR & T405Q-600H ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT Test Conditions Quadrant (1) VD=12V RL=30Ω VGT VGD IH (2) IL VD=VDRM RL=3.3kΩ Tj = 125°C Unit I-II-III IV MAX. 5 10 mA ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 10 mA MAX. 10 15 mA IT= 100mA IG = 1.2IGT T405Q I - III - IV II dV/dt (2) VD=67% VDRM Gate open Tj = 125°C MIN. 10 V/µs (dV/dt)c (dI/dt)c = 1.8 A/ms Tj = 125°C MIN. 2 V/µs (2) STATIC CHARACTERISTICS Symbol VTM(2) Test Conditions MAX. 1.5 V Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 100 mΩ IDRM IRRM VDRM = VRRM Tj = 25°C Tj = 125°C MAX 5 1 µA mA VTO (2) tp = 380µs Unit Tj = 25°C (2) ITM = 5 A Value Note 1: Minimum IGT is guaranted at 5% of IGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient S = 0.5 cm² Value Unit 3 °C/W DPAK 70 °C/W IPAK 100 PRODUCT SELECTOR Part Number Voltage Sensitivity Type Package T405Q-600B-TR 600V 5 mA Sensitive DPAK T405Q-600H 600V 5 mA Sensitive IPAK 2/7 T405Q-600B-TR & T405Q-600H ORDERING INFORMATION T 4 05 Q - 600 B (-TR) TRIAC SERIES Packing mode: Blank: Tube -TR: DPAK Tape &reel Current: 4A Package: B: DPAK H: IPAK Sensitivity: 5mA (Q1-Q2-Q3) 10mA (Q4) Voltage: 600V Number of quadrants: 4 OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode T405Q-600B-TR T405Q600 0.3 g 2500 Tape & reel T405Q-600H T405Q600 0.4 g 75 Tube 3/7 T405Q-600B-TR & T405Q-600H Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: RMS on-state current versus case temperature. P(W) IT(RMS)(A) 5 5.0 α=180° α=180° 4.5 4 4.0 3.5 3.0 3 2.5 2.0 2 1.5 180° 1 α α IT(RMS)(A) 1.0 0.5 Tc(°C) 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 Fig. 3: Relative variation of thermal impedance versus pulse duration. 25 50 75 100 125 Fig. 4: On-state characteristics (maximum values). ITM(A) K=[Zth/Rth] 100 1.E+00 Tj=25°C Zth(j-c) Tj=125°C 1.E-01 Zth(j-c) 10 1.E-02 tP(s) 1.E-03 1.E-03 1.E-02 1.E-01 1.E+00 Tj max. : Vto = 0.85 V Rd = 100 mΩ VTM(V) 1.E+01 1.E+02 1.E+03 Fig. 5: Surge peak on-state current versus number of cycles. 1 0 1 2 3 4 5 6 7 8 9 10 Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A) ITSM(A), I²t(A²s) 40 1000 Tj initial=25°C 35 t=20ms Non repetitive Tj initial=25°C 30 One cycle 100 25 dI/dt limitation: 50A/µs ITSM 20 Repetitive TC=110°C 15 10 I²t 10 5 Number of cycles tp(ms) 0 1 1 4/7 10 100 1000 0.01 0.10 1.00 10.00 T405Q-600B-TR & T405Q-600H Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 8: Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values). IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 3.0 1.8 2.5 1.6 1.4 2.0 IGT 1.2 1.0 1.5 0.8 IH & I L 1.0 0.6 0.4 0.5 0.2 Tj(°C) (dV/dt)c (V/µs) 0.0 0.0 -40 -30 -20 -10 0 0.1 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. 1.0 10.0 Fig. 10: Relative variation of static dV/dt immunity versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] dV/dt [Tj] / dV/dt [Tj = 125°C] 8 8 7 7 6 6 5 5 4 4 3 3 2 2 VD=VR=400V 1 1 Tj(°C) Tj(°C) 0 0 25 50 75 100 125 25 50 75 100 125 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board FR4, Cu = 35µm). Rth(j-a)(°C/W) 100 90 80 70 60 50 40 30 20 10 S(cm²) 0 0 2 4 6 8 10 12 14 16 18 20 5/7 T405Q-600B-TR & T405Q-600H PACKAGE MECHANICAL DATA DPAK REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 FOOTPRINT 6.7 6.7 3 3 1.6 1.6 2.3 6/7 2.3 DIMENSIONS Millimeters Inches Min. Max Min. Max. 2.20 2.40 0.086 0.094 0.90 1.10 0.035 0.043 0.03 0.23 0.001 0.009 0.64 0.90 0.025 0.035 5.20 5.40 0.204 0.212 0.45 0.60 0.017 0.023 0.48 0.60 0.018 0.023 6.00 6.20 0.236 0.244 6.40 6.60 0.251 0.259 4.40 4.60 0.173 0.181 9.35 10.10 0.368 0.397 0.80 typ. 0.031 typ. 0.60 1.00 0.023 0.039 0° 8° 0° 8° T405Q-600B-TR & T405Q-600H PACKAGE MECHANICAL DATA IPAK DIMENSIONS REF. A E C2 B2 L2 D H L L1 B3 B6 B A1 V1 B5 G C A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Millimeters Inches Min. Typ. Max. Min. Typ. Max. 2.2 2.4 0.086 0.094 0.9 1.1 0.035 0.043 0.7 1.3 0.027 0.051 0.64 0.9 0.025 0.035 5.2 5.4 0.204 0.212 0.85 0.033 0.3 0.035 0.95 0.037 0.45 0.6 0.017 0.023 0.48 0.6 0.019 0.023 6 6.2 0.236 0.244 6.4 6.6 0.252 0.260 4.4 4.6 0.173 0.181 15.9 16.3 0.626 0.641 9 9.4 0.354 0.370 0.8 1.2 0.031 0.047 0.8 1 0.031 0.039 10° 10° Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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