TDA1910 10W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA 1910 is a monolithic integrated circuit in MULTIWATT package, intended for use in Hi-Fi audio power applications, as high quality TV sets. The TDA 1910 meets the DIN 45500 (d = 0.5%) guaranteed output power of 10W when used at 24V/4W. At 24V/8W the output power is 7W min. Features: – muting facility – protection against chip over temperature – very low noise – high supply voltage rejection – low ”switch-on” noise. The TDA 1910 is assembled in MULTIWATT package that offers: – easy assembly – simple heatsink Multiwatt 11 ORDERING NUMBERS: TDA1910 (Multiwatt11 Vertical) TDA1910HS (Multiwatt11 Horizontal) – space and cost saving – high reliability ABSOLUTE MAXIMUM RATINGS Symbol Vs Io Io Vi Vi V11 P tot Tstg, Tj Parameter Supply voltage Output peak current (non repetitive) Output peak current (repetitive) Input voltage Differential input voltage Muting thresold voltage Power dissipation at Tcase = 90°C Storage and junction temperature Value 30 3.5 3.0 0 to + Vs ±7 Vs 20 -40 to 150 Unit V A A V V V W °C TEST CIRCUIT (*) See fig. 13. May 1997 1/14 TDA1910 PIN CONNECTION (Top view) SCHEMATIC DIAGRAM 2/14 TDA1910 TEST CIRCUIT (*) See fig. 13. MUTING CIRCUIT 3/14 TDA1910 THERMAL DATA Symbol Rth j-case Parameter Thermal resistance junction-case max Value Unit 3 °C/W ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb = 25 °C, Rth (heatsink)= 4°C/W, unless otherwise specified) Symbol Parameter Test condition Min. Typ. Max. Unit 30 V 9.2 12.4 10 13.4 V 32 35 mA Vs Supply voltage Vo Quiescent output voltage Vs = 18V Vs = 24V Id Quiescent drain current Vs = 18V Vs = 24V 19 21 Output stage saturation voltage IC = 2A 1 IC = 3A 1.6 VCE sat Po d d 4/14 Output power Harmonic distortion Intermodulation distortion 8 8.3 11.5 d = 0.5% Vs = 18V Vs = 24V Vs = 24V f = 40 to 15,000Hz R L= 4Ω R L = 4Ω R L = 8Ω 6.5 10 7 7 12 7.5 d = 10% Vs = 18V Vs = 24V Vs = 24V f = 1 KHz R L = 4Ω R L = 4Ω R L = 8Ω 8.5 15 9 9.5 17 10 f = 40 to 15,000 Hz Vs = 18V R L = 4Ω Po = 50 mW to 6.5W R L = 4Ω Vs = 24V Po = 50 mW to 10W R L = 8Ω Vs = 24V Po = 50 mW to 7W RL = 4Ω Po = 10W Vs = 24V f1 = 250 Hz f2 = 8 KHz (DIN 45500) F = 1 KHz, Vs = 18V vs = 24V Vs = 24V RL = 4Ω Po = 7 W RL = 4Ω Po = 12 W RL = 8Ω Po = 7.5W Vi Input saturation voltage (rms) Vs = 18V Vs = 24V 1.8 2.4 Ri Input resistance (pin 5) f = 1 KHz 60 Id Drain current Vs = 24V RL = 4Ω RL = 8Ω f = 1 KHz Po = 12W Po = 7.5W 0.5 0.2 0.5 0.2 0.5 170 220 245 Input sensitivity W 0.2 0.2 Vi V % % mV V 100 KΩ 820 475 mA TDA1910 ELECTRICAL CHARACTERISTICS (continued) Symbol h Parameter Efficiency Test condition Vs = 24V R L = 4Ω R L = 8Ω f = 1 KHz Po = 12W Po = 7.5W BW Small signal bandwidth Vs = 24V RL = 4Ω BW Power bandwidth Vs = 24V Po = 12W RL = 4Ω d ≤ 5% Gv Voltage gain (open loop) f = 1 KHz Gv Voltage gain (closed loop) Vs = 24V f = 1 KHz eN Total input noise S/N SVR Tsd Signal to noise ratio Supply voltage rejection Vs = 24V Po = 12W RL = 4Ω Min. Po = 1W RL = 4Ω Po = 1W Max. Unit 62 65 % 10 to 120,000 Hz 40 to 15,000 Hz 75 dB 29.5 30 30.5 dB Rg = 50Ω Rg = 1KΩ Rg = 10KΩ (°) 1.2 1.3 1.5 3.0 3.2 4.0 µV Rg = 50Ω Rg = 1KΩ Rg = 10KΩ (°°) 2.0 2.0 2.2 5.0 5.2 6.0 µV Rg = 10KΩ Rg = 0 (°) 97 103 105 dB Rg = 10KΩ Rg = 0 (°°) 93 100 100 dB 50 60 dB 110 125 °C Vs = 24V RL = 4Ω Rg = 10 KΩ fripple = 100 Hz Thermal sjut-down case (*) temperature Typ. Ptot = 8W MUTING FUNCTION (Refer to Muting circuit) VT Muting-off threshold voltage (pin 11) 1.9 4.7 VT Muting-on threshold voltage (pin 11) 0 1.3 6 Vs R1 Input resistance (pin 1) Muting off 80 Muting on R11 Input resistance (pin 11) AT Muting attenuation 200 10 150 Rg + R 1 = 10 KΩ 50 V V KΩ 30 Ω KΩ 60 dB Note : (°) Weighting filter = curve A. (° °) Filter with noise bandwidth: 22 Hz to 22 KHz. (*) See fig. 29 and fig. 30. 5/14 TDA1910 Figure 1. Quiescent output voltage vs. supply voltage Figure 2. Quiescent drain current vs. supply voltage Figure 3. Open loop frequency response Figure 4. Output power vs. supply voltage Figure 5. Output power vs. supply voltage F i gure 6 . Dis torti on vs. output power F i gure 7 . Dis torti on vs. output power Figure 8. Output power vs. frequency Figure 9. Output power vs. frequency 6/14 TDA1910 Figure 10. Output power vs. input voltage Figure 11. Output power vs. input voltage Figure 12. Total input noise vs. source resistance Figure 13. Values of capacitor CX vs. bandwidth (BW) and gain (GV) Figure 14. Supply voltage rejection vs. voltage gain Figure 15. Supply voltage r e je c ti o n v s . s o urc e resistance Figure 16. Power dissipation and efficiency vs. output power Figure 17. Power dissipation and efficiency vs. output power F i gu re 1 8. Ma x p o we r d i ssi p a ti o n v s. sup pl y voltage 7/14 TDA1910 APPLICATION INFORMATION Figure 19. Application circuit without muting Figure 21. Application circuit with muting 8/14 Figure 20. PC board and component lay-out of the circuit of fig. 19 (1:1 scale) Performance (circuits of fig. 19 and 21) Po = 12W (40 to 15000 Hz, d ≤ 0.5%) Vs = 24V Id = 0.82A Gv = 30 dB TDA1910 APPLICATION INFORMATION (continued) Figure 22. Two position DC tone control (10 dB boost 50 Hz and 20 KHz) using change of pin 1 resistance (muting function) Figu re 23 . Fre quenc y response of the circuit of fig. 22 Figure 24. 10 dB 50 Hz boos tone control using change of pin 1 resistance (muting function) Figu re 25 . Fre quenc y response of the circuit of fig. 24 Figure 26. Squelch function in TV applications Figure 27. Delayed muting circuit 9/14 TDA1910 MUTING FUNCTION The output signal can be inhibited applying a DC voltage VT to pin 11, as shown in fig. 28 Figure 28 The input resistance at pin 1 depends on the threshold voltage VT at pin 11 and is typically. R1 = 200 KΩ R1 = 10 Ω 1.9V ≤ VT ≤ 4.7V 0V ≤ VT ≤ 1.3V @ 6V ≤ VT ≤ Vs @ muting-off muting-on Referringto the following input stage, the possible attenuationof the input signal and therefore of the output signal can be found using the following expression. AT = Vi V5 = Rg + R5 ⁄ ⁄ R1 R5 ⁄ ⁄ R1 where R5 ≅ 100 KΩ Considering Rg = 10 KΩ the attenuation in the muting-on condition is typically AT = 60 dB. In the muting-off condition, the attenuation is very low, typically 1.2 dB. A very low current is necessary to drive the threshold voltage VT because the input resistance at pin 11 is greater than 150 KΩ. The muting function can be used in many cases,when a temporaryinhibition of the output signal is requested, for example: - in switch-on condition, to avoid preamplifier power-on transients (see fig. 27) 10/14 - during commutations at the input stages. - during the receiver tuning. The variable impedance capability at pin 1 can be useful in many applications and we have shown 2 examples in fig. 22 and 24, where it has been used to change the feedback network, obtaining 2 different frequency responses. TDA1910 APPLICATION SUGGESTION The recommended values of the components are those shown on application circuit of fig. 21. Different values can be used. The following table can help the designer. Component Raccom. value Purpose Larger than Smaller than recommended value recommended value Rg + R 1 10KΩ Input signal imped. for muting operation Decrease of the Increase of the atteattenuation in muting nuation in muting-on on condition. condition. Decrease of the input sensitivity. R2 3.3KΩ Close loop gain setting. Increase of gain. Decrease of gain. Increase quiescent current. R3 100Ω Close loop gain setting. Decrease of gain. Increase of gain. R4 1Ω Frequency stability Danger of oscillation at high frequencies with inductive loads. P1 20KΩ Volume potentiometer. Increase of the switch-on noise. C1 C2 C3 1 µF 1 µF 0.22µF Input DC decoupling. C4 2.2µF Inverting input DC decoupling. C5 0.1µF Supply voltage bypass. C6 10µF Ripple rejection. C7 47µF C8 0.22µF C9 2200µF (RL = 4Ω) 1000 µF (RL = 8Ω) Decrease of the input impedance and of the input level. Allowed range Min. Max. 9 R3 R 2/9 10KΩ 100KΩ Higher low frequency cutoff. Increase of the switch-on noise. Higher low frequency cutoff. 0.1µF Danger of oscillations. Degradation of SVR 2.2µF 100µF Bootstrap. Increase of the distortion at low frequency. 10µF 100µF Frequency stability. Danger of oscillation. Output DC decoupling. Higher low frequency cutoff. Increase of SVR. Increase of the switch-on time 11/14 TDA1910 THERMAL SHUT-DOWN The presence of a thermal limiting circuit offers the following advantages: 1) An overload on the output (even if it is permanent), or an above limit ambient temperature can be easily supported since the T j cannot be higher than 150°C. 2) The heatskink can have a smaller factor of safety compared with that of a conventional Figure 29. Output power and d r ai n c u rr e n t vs . c ase temperature circuit. There is no possibility of device damage due to high junction temperature. If for any reason, the junction temperature increases up to 150°C, the thermal shut-down simply reduces the power dissipation and the current consumption. The maximum allowable power dissipation depends upon the size of the externalheatsink (i.e. its thermal resistance); fig. 31 shows this dissipable power as a function of ambient temperature for different thermal resistance. Figure 30. Output power and d ra i n c u rr e nt vs . cas e temperature Figure31. Maximumallow able power dissipation vs. ambient temperature MOUNTING INSTRUCTIONS The power dissipated in the circuit must be removed by adding an external heatsink. Thanks to the Multiwatt package attaching the heatsink is very simple, a screw or a compression 12/14 spring (clip) being sufficient. Between the heatsink and the package it isbetterto insert a layer of silicon grease, to optimize the thermal contact; no electrical isolation is needed between the two surfaces. TDA1910 MULTIWATT 11 VERTICAL PACKAGE MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 5 B 2.65 0.104 C 1.6 0.063 D 0.197 1 E 0.49 0.039 0.55 0.019 0.022 F 0.88 0.95 0.035 G 1.57 1.7 1.83 0.062 0.067 0.037 0.072 G1 16.87 17 17.13 0.664 0.669 0.674 H1 19.6 0.772 H2 20.2 0.795 L 21.5 22.3 0.846 0.878 L1 21.4 22.2 0.843 0.874 L2 17.4 18.1 0.685 0.713 L3 17.25 17.5 17.75 0.679 0.689 0.699 L4 10.3 10.7 10.9 0.406 0.421 0.429 L7 2.65 2.9 0.104 0.114 M 4.1 4.3 4.5 0.161 0.169 0.177 M1 4.88 5.08 5.3 0.192 0.200 0.209 S 1.9 2.6 0.075 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 13/14 TDA1910 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 14/14