STMICROELECTRONICS TDA7565

TDA7565
QUAD POWER AMPLIFIER WITH BUILT-IN
VOLTAGE CONVERTER
PRODUCT PREVIEW
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DMOS POWER OUTPUT
NON-SWITCHING HI-EFFICIENCY
AMPLIFIER
SWITCHING HIGH EFFICIENCY VOLTAGE
CONVERTER
HIGH OUTPUT POWER CAPABILITY 4x60W
EIAJ/4Ω
MULTIPOWER BCD TECHNOLOGY
MOSFET OUTPUT POWER STAGE
FLEXIWATT27
FULL I2C BUS DRIVING:
– ST-BY
– INDEPENDENT FRONT/REAR SOFT PLAY/MUTE
– SELECTABLE GAIN 26dB - 12dB (FOR
LOW NOISE LINE OUTPUT FUNCTION)
– HIGH EFFICIENCY ENABLE/DISABLE
– VOLTAGE CONVERTER ENABLE/DISABLE
– REGULATED VOLTAGE SELECTION
– SWITCHING FREQUENCY SELECTION
HARDWARE MUTE FUNCTION
FULL FAULT PROTECTION
DC OFFSET DETECTION
FOUR INDEPENDENT SHORT CIRCUIT
PROTECTION
CLIPPING DETECTOR WITH SELECTABLE
THRESHOLD (1%/10%) VIA I2C BUS
ORDERING NUMBER: TDA7565
DESCRIPTION
The TDA7565 is a new BCD technology QUAD
BRIDGE type of car radio amplifier in Flexiwatt27
package specially intended for car radio applications. Thanks to the DMOS output stage the
TDA7565 has a very low distortion allowing a clear
powerful sound. The built-in voltage converter
control block assures a very high output power
with an extremely low number of added components.The dissipated power under average listening condition is alligned to the conventional
solutions (4x40W).
BLOCK DIAGRAM
VS
MUTE
CLK
VCC1
DATA
VCC2
I2C BUS
CC GND
CLIP
DETECTOR
MUTE1 MUTE2
IN RF
VOLTAGE
CONVERTER
CONTROL
MG
VOLTAGE
CONVERTER
EXTERNAL
CIRCUIT
F
OUT RF+
12/26dB
OUT RF-
IN RR
SHORT CIRCUIT
PROTECTION
R
OUT RR+
12/26dB
OUT RR-
IN LF
SHORT CIRCUIT
PROTECTION
F
OUT LF+
12/26dB
OUT LF-
IN LR
SHORT CIRCUIT
PROTECTION
R
OUT LR+
12/26dB
OUT LRSHORT CIRCUIT
PROTECTION
SVR
AC_GND
RF
RR
LF
LR
PW_GND
TAB
S_GND
D00AU1232A
September 2003
This is preliminary information on a new product now in development. Details are subject to change without notice.
1/10
TDA7565
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
18
V
Vopc OFF
Operating Supply Voltage , converter OFF
Vopc ON
Operating Supply Voltage , converter ON
25
V
DC Supply Voltage
28
V
Peak Supply Voltage (for t = 50ms)
50
V
CK pin Voltage
6
V
Data Pin Voltage
6
V
IO
Output Peak Current (not repetitive t = 100µs)
8
A
IO
Output Peak Current (repetitive f > 10Hz)
VS
Vpeak
VCK
VDATA
Ptot
Tstg, Tj
Power Dissipation Tcase = 70°C
Storage and Junction Temperature
6
A
80
W
-55 to 150
°C
THERMAL DATA
Symbol
Rth j-case
Description
Thermal Resistance Junction-case
Max.
PIN CONNECTION
27
MUTE
26
DATA
25
PW_GND RR
24
OUT RR-
23
CK
22
OUT RR+
21
VCC2
20
OUT RF-
19
PW_GND RF
18
OUT RF+
17
AC_GND
16
IN RF
15
IN RR
14
S_GND
13
IN LR
12
IN LF
11
SVR
10
OUT LF+
9
PW_GND LF
8
OUT LF-
7
VCC1
6
OUT LR+
5
CC GND
4
OUT LR-
3
PW_GND LR
2
MG
1
TAB
D00AU1233A
2/10
Value
Unit
1
°C/W
TDA7565
ELECTRICAL CHARACTERISTICS
(Refer to the test circuit, VS = 13.5V; RL = 4Ω; f = 1KHz; Voltage converter Disabled (VCOff); Tamb = 25°C; unless
otherwise specified.)
Symbol
Parameter
POWER AMPLIFIER
Supply Voltage Range
VS
Total Quiescent Drain Current
Id
Id
Total Quiescent Drain Current
(VCon)
PO
Output Power
(VCoff)
V = 14.4V
PO
Output Power
(VCon)
V = 14.4V
THD
Total Harmonic Distortion
CT
RIN
Cross Talk
GV1
∆GV1
GV2
∆GV2
EIN1
EIN2
Output Noise Voltage 2
SVR
Supply Voltage Rejection
BW
ASB
Power Bandwidth
Stand-by Attenuation
ISB
AM
VOS
VAM
Stand-by Current
Mute Attenuation
Offset Voltage
Min. Supply Voltage Threshold
Slew Rate
Turn on Delay
Turn off Delay
Thermal Foldback Junction
Temperature
Clip Det THD level
CDTHD
VO
Offset Detection
Thw
Thermal Warning
Min.
Typ.
8
180
TBD
Max.
Unit
18
300
V
mA
mA
EIAJ (VS = 13.7V)
35
W
THD = 10%
THD = 1%
EIAJ (VS = 13.7V)
25
20
60
W
W
W
40
31
0.03
0.03
0.1
0.15
55
W
W
%
%
%
%
dB
THD = 10%
THD = 1%
PO = 1W to 12W; STDMODE
HE MODE; PO = 1-2W
HE MODE; PO = 4-12W
PO = 1-12W, f = 10kHz
f = 1KHz to 10KHz, RG = 600Ω
Input Impedance
Voltage Gain 1
Voltage Gain Match 1
Voltage Gain 2
Voltage Gain Match 2
Output Noise Voltage 1
TON
TOFF
Test Condition
50
60
25.5
-1
11.5
100
26
0.5
12
130
26.5
1
12.5
KΩ
dB
dB
dB
60
1
100
dB
µV
15
20
µV
-1
Rg = 600Ω; GV = 26dB
filter 20Hz to 22kHz
Rg = 600Ω; GV = 26dB
filter 20Hz to 12kHz
f = 100Hz to 10kHz; Vr = 1Vpk;
Rg = 600Ω
(-3dB)
0.1
50
60
dB
75
70
100
KHz
dB
7
100
7.5
155
10
10
170
20
20
185
µA
dB
mV
V
V/µs
ms
ms
°C
0
5
±1.5
1
10
±2
2
15
±2.5
%
%
V
100
Mute & Play
70
-100
6.5
1.5
D2/D1 (IB1) 0 to 1
D2/D1 (IB1) 1 to 0
D0 (IB1) = 0
D0 (IB1) = 1
Power Amplifier = play
AC Input = 0
90
165
°C
I2C
BUS INTERFACE
Clock Frequency
fSCL
VIL
VIH
Input Low Voltage
Input High Voltage
2.3
400
KHz
1.5
V
V
3/10
TDA7565
ELECTRICAL CHARACTERISTICS (continua)
(Refer to the test circuit, VS = 13.5V; RL = 4Ω; f = 1KHz; Voltage converter Disabled (VCOff); Tamb = 25°C; unless
otherwise specified.)
Symbol
Parameter
VMin(pin27) Mute in Threshold Voltage
Test Condition
Amp. Mute
Min.
VMout(pin27) Mute out Threshold Voltage
3.5
AM(pin 27) Mute Attenuation
80
VOLTAGE CONVERTER
Vcc1,
Converter Output Voltage
Vcc2
(VC = ON)
Fs
VS = 14V
D3 (IB2) = 0; D6 (IB2) =
D3 (IB2) = 1; D6 (IB2) =
D3 (IB2) = 0; D6 (IB2) =
D3 (IB2) = 1; D6 (IB2) =
D6 (IB1) = 0; D7 (IB1) =
D6 (IB1) = 1; D7 (IB1) =
D6 (IB1) = 0; D7 (IB1) =
D6 (IB1) = 1; D7 (IB1) =
Io = 250mA
Io = 20mA
Io = 200mA
Io = 5mA
Co = 1nF
Co = 1nF
Io = 5mA
Voltage Converter Switching
Frequency
Vmgl
Vmgh
Mos Gate Output Low Voltage
Mos Gate Output High Voltage
Vmgclamp
tf
tr
Vmgl
(VCoff)
Mos Gate Output Clamp Voltage
Fall Time
Rise Time
Mos Gate Output Voltage with
Voltage Converter Disabled
Typ.
Max.
1.5
V
90
0
0
1
1
0
0
1
1
15
16.5
17.5
18.5
V
V
V
V
100
150
260
400
kHz
kHz
kHz
kHz
V
V
V
V
ns
ns
V
1
10.5
10
TBD
20
50
0.5
Figure 1. Demoboard Schematic
C10 2.2nF
VS
(Vbatt)
C7
2200µF
R5 10 1W
L1 100µH
STPS30L40CT
C8
220nF
D1
DGND
SCL
SDA
23
26
VCC
C12
100nF
C11
3300µF
C13
10µF
R1 50Ω
C9
10nF
R4
3.3
1W
Q1
R3 10Ω
2
7
5
21
OUT RF+
18
STP60NE06
C1 220nF
20
16
IN RF
OUT RFOUT RR+
22
C2 220nF
15
IN RR
24
TDA7565
10
12
8
C4 220nF
IN LR
13
MUTE
27
OUT LFOUT LR+
6
4
11
14
17
C6
10µF
4/10
OUT RROUT LF+
C3 220nF
IN LF
C5
1µF
9
3
19
Unit
V
25
1
OUT LR-
D00AU1224B
TDA7565
I2C BUS INTERFACE
Data transmission from microprocessor to the TDA7565 and viceversa takes place through the 2 wires I2C BUS interface, consisting of the two lines SDA and SCL (pull-up resistors to positive supply voltage must be connected).
Data Validity
As shown by fig. 2, the data on the SDA line must be stable during the high period of the clock.
The HIGH and LOW state of the data line can only change when the clock signal on the SCL line is LOW.
Start and Stop Conditions
As shown by fig. 3 a start condition is a HIGH to LOW transition of the SDA line while SCL is HIGH.
The stop condition is a LOW to HIGH transition of the SDA line while SCL is HIGH.
Byte Format
Every byte transferred to the SDA line must contain 8 bits. Each byte must be followed by an acknowledge bit.
The MSB is transferred first.
Acknowledge
The transmitter* puts a resistive HIGH level on the SDA line during the acknowledge clock pulse (see fig. 22).
The receiver** the acknowledges has to pull-down (LOW) the SDA line during the acknowledge clock pulse, so
that the SDAline is stable LOW during this clock pulse.
* Transmitter
master (µP) when it writes an address to the TDA7565
slave (TDA7565) when the µP reads a data byte from TDA7565
** Receiver
slave (TDA7565) when the µP writes an address to the TDA7565
master (µP) when it reads a data byte from TDA7565
Figure 2. Data Validity on the I2C BUS
SDA
SCL
DATA LINE
STABLE, DATA
VALID
CHANGE
DATA
ALLOWED
D99AU1031
Figure 3.
SCL
I2CBUS
SDA
D99AU1032
START
STOP
Figure 4.
SCL
1
2
3
7
8
9
SDA
MSB
START
D99AU1033
ACKNOWLEDGMENT
FROM RECEIVER
5/10
TDA7565
SOFTWARE SPECIFICATIONS
All the functions of the TDA7565 are activated by I2C interface.
The bit 0 of the "ADDRESS BYTE" defines if the next bytes are write instruction (from µP to TDA7565) or
read instruction (from TDA7565 to µP).
D7
Address bit
D6
Address bit
D5
Address bit
D4
Address bit
D3
Address bit
D2
Address bit
D1
Address bit
D0(R/W)
Read/Write bit
0 = Write instruction
1 = read instruction
If R/W = 0, the µP sends 2 "Instruction Bytes": IB1 and IB2.
IB1
D7
Sel Freq Switch 1
D6
Sel Freq Switch 2
D5
Offset Detection start (D5 = 1)
Offset Detection stop (D5 = 0) (off)
D4
Front Channel
Gain = 26dB (D4 = 0)
Gain = 12dB (D4 = 1)
D3
Rear Channel
Gain = 26dB (D3 = 0)
Gain = 12dB (D3 = 1)
D2
Mute front channels (D2 = 0)
Unmute front channels (D2 = 1)
D1
Mute rear channels (D1 = 0)
Unmute rear channels (D1 = 1)
D0
CD 1% (D0 = 0)
CD 10% (D0 = 1)
D7
Voltage Converter Enabled (D7 = 1)
Voltage Converter Disabled (D7 = 0)
D6
Regulated voltage selection 1
D5
Test Speed
D4
Stand-by on - Amplifier not working - (D4 = 0)
Stand-by off - Amplifier working - (D4 = 1)
D3
Regulated voltage selection 0)
D2
To be forced to “Level 1”
D1
Right Channel
Power amplifier working in standard mode (D1 = 0)
Power amplifier working in HiEff mode(D1 = 1)
D0
Left Channel
Power amplifier working in standard mode (D0 = 0)
Power amplifier working in HiEff mode(D0 = 1)
IB2
6/10
TDA7565
DB1
D7
Thermal Warning
D6
X
D5
X
D4
X
D3
X
D2
Offset (LF)
D1
Short Circuit Protection (CH1)
D0
X
D7
Off Status
D6
X
D5
Clip Detector Output
D4
X
D3
X
D2
Offset (LR)
D1
Short Circuit Protection (CH2)
D0
X
D7
St-By Status
D6
X
D5
X
D4
X
D3
X
D2
Offset (RF)
D1
Short Circuit Protection (CH3)
D0
X
D7
X
D6
X
D5
X
D4
X
D3
X
D2
Offset (RR)
D1
Short Circuit Protection (CH4)
D0
X
DB2
DB3
DB4
7/10
TDA7565
Examples of bytes sequence
1 - Turn-On of the power amplifier with 26dB gain, mute on, diagnostic defeat, HighEff mode, voltage converter
disabled.
Start
Address byte with D0 = 0
ACK
IB1
ACK
IB2
XX00X000
ACK
STOP
ACK
STOP
ACK
STOP
0XX1XX10
2 - Turn-Off of the power amplifier
Start
Address byte with D0 = 0
ACK
IB1
ACK
XXXXXXXX
IB2
XXX0XXX0
4 - Offset detection procedure start
Start
Address byte with D0 = 0
ACK
IB1
XX1XX11X
ACK
IB2
XXX1XXX0
4 - Offset detection procedure stop and reading operation.
Start
■
■
Address byte with D0 = 1
ACK
DB1
STOP
The purpose of this test is to check if a D.C. offset (2V typ.) is present on the outputs, produced by input
capacitor with anomalous leackage current or humidity between pins.
The delay from 3 to 4 can be selected by software, starting from T.B.D. ms
8/10
TDA7565
DIM.
MIN.
4.45
1.80
A
B
C
D
E
F (1)
G
G1
H (2)
H1
H2
H3
L (2)
L1
L2 (2)
L3
L4
L5
M
M1
N
O
R
R1
R2
R3
R4
V
V1
V2
V3
0.75
0.37
0.80
25.75
28.90
22.07
18.57
15.50
7.70
3.70
3.60
mm
TYP.
4.50
1.90
1.40
0.90
0.39
1.00
26.00
29.23
17.00
12.80
0.80
22.47
18.97
15.70
7.85
5
3.5
4.00
4.00
2.20
2
1.70
0.5
0.3
1.25
0.50
MAX.
4.65
2.00
MIN.
0.175
0.070
1.05
0.42
0.57
1.20
26.25
29.30
0.029
0.014
22.87
19.37
15.90
7.95
0.869
0.731
0.610
0.303
4.30
4.40
0.145
0.142
0.031
1.014
1.139
inch
TYP.
0.177
0.074
0.055
0.035
0.015
0.040
1.023
1.150
0.669
0.503
0.031
0.884
0.747
0.618
0.309
0.197
0.138
0.157
0.157
0.086
0.079
0.067
0.02
0.12
0.049
0.019
MAX.
0.183
0.079
OUTLINE AND
MECHANICAL DATA
0.041
0.016
0.022
0.047
1.033
1.153
0.904
0.762
0.626
0.313
0.169
0.173
5˚ (Typ.)
3˚ (Typ.)
20˚ (Typ.)
45˚ (Typ.)
Flexiwatt27 (vertical)
(1): dam-bar protusion not included
(2): molding protusion included
V
C
B
V
H
H1
V3
A
H2
O
H3
R3
L4
R4
V1
R2
L2
N
L3
R
L
L1
V1
V2
R2
D
R1
L5
Pin 1
R1
R1
E
G
G1
F
FLEX27ME
M
M1
7139011
9/10
TDA7565
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2003 STMicroelectronics - All rights reserved
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